APTM100H35FTG Microchip Technology
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Technische Details APTM100H35FTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 17A, Drain-source voltage: 1kV, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP4, On-state resistance: 0.42Ω, Topology: H-bridge; NTC thermistor, Pulsed drain current: 88A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100H35FTG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100H35FTG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 17A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP4 On-state resistance: 0.42Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100H35FTG | Hersteller : Microsemi Corporation | Description: MOSFET 4N-CH 1000V 22A SP4 |
Produkt ist nicht verfügbar |
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APTM100H35FTG | Hersteller : Microchip / Microsemi | Discrete Semiconductor Modules DOR CC4103 |
Produkt ist nicht verfügbar |
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APTM100H35FTG | Hersteller : Microchip Technology | Discrete Semiconductor Modules DOR CC4103 |
Produkt ist nicht verfügbar |
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APTM100H35FTG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 17A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP4 On-state resistance: 0.42Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® |
Produkt ist nicht verfügbar |