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APTM100H35FTG

APTM100H35FTG Microchip Technology


13158011-aptm100h35ftg-rev1-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 22A 20-Pin Case SP-4 Tube
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Technische Details APTM100H35FTG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 17A, On-state resistance: 0.42Ω, Power dissipation: 390W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 88A, Case: SP4, Anzahl je Verpackung: 1 Stücke.

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APTM100H35FTG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Case: SP4
Anzahl je Verpackung: 1 Stücke
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APTM100H35FTG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 1000V 22A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM100H35FTG Hersteller : Microchip / Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules DOR CC4103
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APTM100H35FTG Hersteller : Microchip Technology APTM100H35FTG_Rev2-3445032.pdf MOSFET Modules PM-MOSFET-FREDFET-7-SP4
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APTM100H35FTG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Case: SP4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH