APTM100H35FTG Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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Technische Details APTM100H35FTG Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP4, Supplier Device Package: SP4, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V, Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 22A, Drain to Source Voltage (Vdss): 1000V (1kV), Power - Max: 390W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP4, Packaging: Bulk.
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