APTGT75A60T1G Microchip / Microsemi

Description: IGBT MODULE 600V 100A 250W SP1, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 250 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.