APTGT50A170T1G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Application: motors
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Pulsed collector current: 100A
Collector current: 50A
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Case: SP1
Anzahl je Verpackung: 13 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Application: motors
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Pulsed collector current: 100A
Collector current: 50A
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Case: SP1
Anzahl je Verpackung: 13 Stücke
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Technische Details APTGT50A170T1G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Application: motors, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Type of module: IGBT, Pulsed collector current: 100A, Collector current: 50A, Technology: Field Stop; Trench, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; NTC thermistor, Max. off-state voltage: 1.7kV, Case: SP1, Anzahl je Verpackung: 13 Stücke.
Weitere Produktangebote APTGT50A170T1G
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Verfügbarkeit |
Preis ohne MwSt |
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APTGT50A170T1G | Hersteller : Microchip Technology | Description: IGBT MODULE 1700V 75A 312W SP1 |
Produkt ist nicht verfügbar |
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APTGT50A170T1G | Hersteller : Microchip Technology | IGBT Modules DOR CC8081 |
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APTGT50A170T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Application: motors Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Pulsed collector current: 100A Collector current: 50A Technology: Field Stop; Trench Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.7kV Case: SP1 |
Produkt ist nicht verfügbar |