APTGT35H120T3G Microchip Technology

Description: IGBT MODULE 1200V 55A 208W SP3, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 208 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 55 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.