APTM100H45STG Microchip Technology
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Technische Details APTM100H45STG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 0.54Ω, Power dissipation: 357W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor, Pulsed drain current: 72A, Case: SP4, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100H45STG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APTM100H45STG | Hersteller : Microchip Technology |
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| APTM100H45STG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 72A Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100H45STG | Hersteller : Microchip / Microsemi |
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| APTM100H45STG | Hersteller : Microchip Technology |
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| APTM100H45STG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 72A Case: SP4 |
Produkt ist nicht verfügbar |