Technische Details APTM120A20SG Microchip Technology
Category: Transistor modules, Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Pulsed drain current: 200A, Type of semiconductor module: MOSFET transistor, Power dissipation: 1.25kW, Technology: POWER MOS 7®, Drain current: 37A, Drain-source voltage: 1.2kV, Gate-source voltage: ±30V, Semiconductor structure: diode/transistor, Case: SP6C, On-state resistance: 0.24Ω, Topology: MOSFET half-bridge + serial diodes + parrallel diodes.
Weitere Produktangebote APTM120A20SG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTM120A20SG | Microchip Technology |
 Discrete Semiconductor Modules PM-MOSFET-7-SP6C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTM120A20SG | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Power dissipation: 1.25kW Technology: POWER MOS 7® Drain current: 37A Drain-source voltage: 1.2kV Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 0.24Ω Topology: MOSFET half-bridge + serial diodes + parrallel diodes |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM120A20SG |
|
Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-7-SP6C
Discrete Semiconductor Modules PM-MOSFET-7-SP6C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM120A20SG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 37A
Drain-source voltage: 1.2kV
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 0.24Ω
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Category: Transistor modules
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 37A
Drain-source voltage: 1.2kV
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 0.24Ω
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH