APTM20UM03FAG Microchip Technology

Description: MOSFET N-CH 200V 580A SP6, Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 15mA, Power Dissipation (Max): 2270W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V, Current - Continuous Drain (Id) @ 25°C: 580A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.