APTM20UM03FAG MICROSEMI
Hersteller: MICROSEMI
SP6/580 A, 200 V, 0.0036 ohm, N-CHANNEL, Si, POWER,MOSFET APTM20
Anzahl je Verpackung: 1 Stücke
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Technische Details APTM20UM03FAG MICROSEMI
Description: MOSFET N-CH 200V 580A SP6, Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 15mA, Power Dissipation (Max): 2270W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V, Current - Continuous Drain (Id) @ 25°C: 580A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.
Weitere Produktangebote APTM20UM03FAG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
APTM20UM03FAG | Microchip Technology |
Description: MOSFET N-CH 200V 580A SP6 Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 15mA Power Dissipation (Max): 2270W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V Current - Continuous Drain (Id) @ 25°C: 580A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM20UM03FAG | Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-7-SP6C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APTM20UM03FAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2270W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2270W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM20UM03FAG |
|
Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-FREDFET-7-SP6C
MOSFET Modules PM-MOSFET-FREDFET-7-SP6C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH