
APTC80H29SCTG Microchip Technology
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Technische Details APTC80H29SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw, On-state resistance: 0.29Ω, Drain current: 11A, Gate-source voltage: ±30V, Pulsed drain current: 60A, Power dissipation: 156W, Topology: H-bridge; NTC thermistor, Drain-source voltage: 800V, Technology: CoolMOS™; SiC; SJ-MOSFET, Semiconductor structure: SiC diode/transistor, Electrical mounting: FASTON connectors; screw, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Case: SP4, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC80H29SCTG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTC80H29SCTG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw On-state resistance: 0.29Ω Drain current: 11A Gate-source voltage: ±30V Pulsed drain current: 60A Power dissipation: 156W Topology: H-bridge; NTC thermistor Drain-source voltage: 800V Technology: CoolMOS™; SiC; SJ-MOSFET Semiconductor structure: SiC diode/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP4 Anzahl je Verpackung: 1 Stücke |
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APTC80H29SCTG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP4 |
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APTC80H29SCTG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTC80H29SCTG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw On-state resistance: 0.29Ω Drain current: 11A Gate-source voltage: ±30V Pulsed drain current: 60A Power dissipation: 156W Topology: H-bridge; NTC thermistor Drain-source voltage: 800V Technology: CoolMOS™; SiC; SJ-MOSFET Semiconductor structure: SiC diode/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP4 |
Produkt ist nicht verfügbar |