APTC60TDUM35PG MICROCHIP TECHNOLOGY

Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC60TDUM35PG MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Drain-source voltage: 600V, Drain current: 54A, On-state resistance: 35mΩ, Power dissipation: 416W, Case: SP6P, Technology: CoolMOS™; SJ-MOSFET, Gate-source voltage: ±20V, Topology: MOSFET x3 half-bridge, Pulsed drain current: 200A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60TDUM35PG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTC60TDUM35PG | Hersteller : Microchip Technology |
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APTC60TDUM35PG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP6-P |
Produkt ist nicht verfügbar |
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APTC60TDUM35PG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTC60TDUM35PG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP6P Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |