APTC80TDU15PG Microchip Technology
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Technische Details APTC80TDU15PG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W, On-state resistance: 0.15Ω, Drain current: 21A, Gate-source voltage: ±30V, Pulsed drain current: 110A, Power dissipation: 277W, Topology: MOSFET x3 half-bridge, Drain-source voltage: 800V, Technology: CoolMOS™; SJ-MOSFET, Semiconductor structure: transistor/transistor, Electrical mounting: Press-in PCB, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Case: SP6P, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC80TDU15PG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC80TDU15PG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W On-state resistance: 0.15Ω Drain current: 21A Gate-source voltage: ±30V Pulsed drain current: 110A Power dissipation: 277W Topology: MOSFET x3 half-bridge Drain-source voltage: 800V Technology: CoolMOS™; SJ-MOSFET Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP6P Anzahl je Verpackung: 1 Stücke |
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APTC80TDU15PG | Hersteller : Microchip Technology |
Description: MOSFET 6N-CH 800V 28A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP6-P |
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| APTC80TDU15PG | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP6P |
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| APTC80TDU15PG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W On-state resistance: 0.15Ω Drain current: 21A Gate-source voltage: ±30V Pulsed drain current: 110A Power dissipation: 277W Topology: MOSFET x3 half-bridge Drain-source voltage: 800V Technology: CoolMOS™; SJ-MOSFET Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP6P |
Produkt ist nicht verfügbar |