Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276061) > Seite 1319 nach 4602
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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MXLPLAD7.5KP13AE3 | Microchip Technology |
 Description: TVS DIODEQualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 7500W (7.5kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: Mini-PLAD Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 349A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk Applications: General Purpose |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MA5KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204AR Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: DO-204AR Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 233A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MA5KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204AR Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: DO-204AR Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 233A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXPLAD6.5KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 6500W (6.5kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 302A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXPLAD7.5KP13AE3 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MPLAD15KP13A/TR | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 696A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MAPLAD15KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 15000W (15kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 696A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MAPLAD15KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 15000W (15kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 696A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXPLAD15KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 15000W (15kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 696A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTX1N2971RB | Microchip Technology |
Description: DIODE ZENER 7.5V 10W DO213AA Qualification: MIL-PRF-19500/124 Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Power - Max: 10 W Grade: Military Supplier Device Package: DO-213AA (DO-4) Impedance (Max) (Zzt): 1.3 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 175°C Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Tolerance: ±5% Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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ATSAM4S2BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Speed: 120MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 47 Part Status: Active Supplier Device Package: 64-LQFP (10x10) Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 64K x 8 Program Memory Size: 128KB (128K x 8) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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ATSAM4S2BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Supplier Device Package: 64-LQFP (10x10) Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 64K x 8 Program Memory Size: 128KB (128K x 8) Speed: 120MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 47 Part Status: Active |
auf Bestellung 1917 Stücke: Lieferzeit 10-14 Tag (e) |
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| JAN1N6044A | Microchip Technology |
Description: TVS DIODE 13VWM 22.5VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN1N6047A | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANTX1N6048A | Microchip Technology |
Description: TVS DIODE 20VWM 33.2VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTX1N6041A | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 Mounting Type: Through Hole Package / Case: DO-202AA, DO-13, Axial Packaging: Bulk Qualification: MIL-PRF-19500/507 Grade: Military Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 16.7V Voltage - Breakdown (Min): 11.4V Bidirectional Channels: 1 Supplier Device Package: DO-13 (DO-202AA) Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 90A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTX1N6042A | Microchip Technology |
Description: TVS DIODE 11VWM 18.2VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N6044A | Microchip Technology |
Description: TVS DIODE 13VWM 22.5VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N6046A | Microchip Technology |
Description: TVS DIODE 17VWM 27.7VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N6047A | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANTXV1N6041A | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 Grade: Military Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 16.7V Voltage - Breakdown (Min): 11.4V Bidirectional Channels: 1 Supplier Device Package: DO-13 (DO-202AA) Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 90A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-202AA, DO-13, Axial Qualification: MIL-PRF-19500/507 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV1N6047A | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N6040A | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
.jpg "MXLSMCJ30CA") |
MXLSMCJ30CA | Microchip Technology |
Description: TVS DIODE 30VWM 48.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8020LLLG | Microchip Technology |
Description: MOSFET N-CH 800V 38A TO264 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT25040B-MAPD-E | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-UDFN (2x3) Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT25040B-MAPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-UDFN (2x3) Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT25040B-SSPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT25040B-XPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP DigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-TSSOP Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT45DB081B-RI-2.5 | Microchip Technology |
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC Memory Organization: 264 Bytes x 4096 pages Memory Interface: SPI Write Cycle Time - Word, Page: 14ms Part Status: Obsolete Supplier Device Package: 28-SOIC Memory Format: FLASH Clock Frequency: 15 MHz Technology: FLASH Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Memory Type: Non-Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Packaging: Tube DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 390 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT80GA90S | Microchip Technology |
Description: IGBT PT 900V 145A D3PAK Power - Max: 625 W Current - Collector Pulsed (Icm): 239 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 145 A Part Status: Active Gate Charge: 200 nC Test Condition: 600V, 47A, 4.7Ohm, 15V Switching Energy: 1.625mJ (on), 1.389mJ (off) Td (on/off) @ 25°C: 18ns/149ns IGBT Type: PT Supplier Device Package: D3Pak Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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APT8065BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: TO-247 [B] |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8065BVFRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8065SVRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A D3PAK Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8056BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 16A TO247 Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8043BLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 5V @ 1mA Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8043BFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A TO247 Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 5V @ 1mA Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8043SFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A D3PAK Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8030LVRG | Microchip Technology |
Description: MOSFET N-CH 800V 27A TO264 Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Part Status: Active Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8030LVFRG | Microchip Technology |
Description: MOSFET N-CH 800V 27A TO264 Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Part Status: Active Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT80GP60B2G | Microchip Technology |
Description: IGBT PT 600V 100A TMAX Power - Max: 1041 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: PT Supplier Device Package: T-MAX™ [B2] Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Input Type: Standard Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8030JVFR | Microchip Technology |
Description: MOSFET N-CH 800V 25A ISOTOP Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Part Status: Active Supplier Device Package: ISOTOP® |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT80GP60JDQ3 | Microchip Technology |
Description: IGBT MOD 600V 151A 462W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 151 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 462 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8014L2FLLG | Microchip Technology |
Description: MOSFET N-CH 800V 52A 264 MAX Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: 264 MAX™ [L2] Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8014L2LLG | Microchip Technology |
Description: MOSFET N-CH 800V 52A 264 MAX Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: 264 MAX™ [L2] Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8015JVR | Microchip Technology |
Description: MOSFET N-CH 800V 44A ISOTOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8015JVFR | Microchip Technology |
Description: MOSFET N-CH 800V 44A ISOTOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT8011JLL | Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: ISOTOP® |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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APT8011JFLL | Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: ISOTOP® Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT1201R6BVFRG | Microchip Technology |
Description: MOSFET N-CH 1200V 8A TO247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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47L64-I/SN | Microchip Technology |
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSC6001HE2A-014.7456 | Microchip Technology |
Description: MEMS OSC XO 14.7456MHZ CMOS SMD Supplier Device Package: 4-VFLGA (1.6x1.2) Base Resonator: MEMS Frequency: 14.7456 MHz Height - Seated (Max): 0.035" (0.89mm) Current - Supply (Max): 1.3mA (Typ) Ratings: AEC-Q100 Voltage - Supply: 1.71V ~ 3.63V Frequency Stability: ±25ppm Operating Temperature: -20°C ~ 70°C Type: XO (Standard) Function: Standby (Power Down) Output: CMOS Mounting Type: Surface Mount Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Package / Case: 4-VFLGA Packaging: Bag |
auf Bestellung 776 Stücke: Lieferzeit 10-14 Tag (e) |
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93LC46B-I/SN15KVAO | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Organization: 64 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 6ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 2 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSC1001DL2-013.5000 | Microchip Technology |
Description: MEMS OSC XO 13.5000MHZ CMOS SMD Type: XO (Standard) Function: Standby (Power Down) Output: CMOS Mounting Type: Surface Mount Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Package / Case: 4-SMD, No Lead Packaging: Tube Base Resonator: MEMS Frequency: 13.5 MHz Height - Seated (Max): 0.035" (0.90mm) Current - Supply (Max): 6.3mA Ratings: AEC-Q100 Voltage - Supply: 1.8V ~ 3.3V Frequency Stability: ±25ppm Operating Temperature: -40°C ~ 105°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 840 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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PIC32MZ0512EFF144T-E/JWX | Microchip Technology | Description: IC MCU 32BIT 512KB FLSH 144TFBGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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PIC32MZ0512EFF144T-E/JWX | Microchip Technology | Description: IC MCU 32BIT 512KB FLSH 144TFBGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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PIC32MZ0512EFF144-E/PL | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 144LQFP |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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PIC32MZ0512EFF144-E/PH | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 144TQFP |
auf Bestellung 212 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT88SC0404CA-TH-T | Microchip Technology |
Description: IC SECURE MEMORY 8-TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Secure Memory Applications: Embedded, Smart Card Supplier Device Package: 8-TSSOP DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VSC8541XMV-01 | Microchip Technology |
Description: IC TELECOM INTERFACE 68QFN |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MXLPLAD7.5KP13AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 349A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Applications: General Purpose
Description: TVS DIODE
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 349A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Applications: General Purpose
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MA5KP13A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MA5KP13Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD6.5KP13Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 6500W (6.5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 302A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 6500W (6.5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 302A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD7.5KP13AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MPLAD15KP13A/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MAPLAD15KP13A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 696A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 696A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MAPLAD15KP13Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 696A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 696A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD15KP13A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 696A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC PLAD
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 696A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N2971RB |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 10W DO213AA
Qualification: MIL-PRF-19500/124
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Power - Max: 10 W
Grade: Military
Supplier Device Package: DO-213AA (DO-4)
Impedance (Max) (Zzt): 1.3 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 7.5V 10W DO213AA
Qualification: MIL-PRF-19500/124
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Power - Max: 10 W
Grade: Military
Supplier Device Package: DO-213AA (DO-4)
Impedance (Max) (Zzt): 1.3 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ATSAM4S2BA-AUR |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 5.91 EUR |
| ATSAM4S2BA-AUR |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
auf Bestellung 1917 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.18 EUR |
| 25+ | 6.53 EUR |
| 100+ | 5.91 EUR |
| JAN1N6044A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Description: TVS DIODE 13VWM 22.5VC DO13
Produkt ist nicht verfügbar
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| JAN1N6047A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
Produkt ist nicht verfügbar
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| JANTX1N6048A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Description: TVS DIODE 20VWM 33.2VC DO13
Produkt ist nicht verfügbar
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| JANTX1N6041A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Mounting Type: Through Hole
Package / Case: DO-202AA, DO-13, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/507
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-13 (DO-202AA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 90A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Description: TVS DIODE 10VWM 16.7VC DO13
Mounting Type: Through Hole
Package / Case: DO-202AA, DO-13, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/507
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-13 (DO-202AA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 90A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
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| JANTX1N6042A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO13
Description: TVS DIODE 11VWM 18.2VC DO13
Produkt ist nicht verfügbar
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| JANTX1N6044A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Description: TVS DIODE 13VWM 22.5VC DO13
Produkt ist nicht verfügbar
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| JANTX1N6046A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 27.7VC DO13
Description: TVS DIODE 17VWM 27.7VC DO13
Produkt ist nicht verfügbar
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| JANTX1N6047A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
Produkt ist nicht verfügbar
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| JANTXV1N6041A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-13 (DO-202AA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 90A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-202AA, DO-13, Axial
Qualification: MIL-PRF-19500/507
Packaging: Bulk
Description: TVS DIODE 10VWM 16.7VC DO13
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-13 (DO-202AA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 90A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-202AA, DO-13, Axial
Qualification: MIL-PRF-19500/507
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANTXV1N6047A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
Produkt ist nicht verfügbar
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| JANTX1N6040A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXLSMCJ30CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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| APT8020LLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A TO264
Description: MOSFET N-CH 800V 38A TO264
Produkt ist nicht verfügbar
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| AT25040B-MAPD-E |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AT25040B-MAPD-T |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AT25040B-SSPD-T |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT25040B-XPD-T |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AT45DB081B-RI-2.5 |
Hersteller: Microchip Technology
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC
Memory Organization: 264 Bytes x 4096 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 14ms
Part Status: Obsolete
Supplier Device Package: 28-SOIC
Memory Format: FLASH
Clock Frequency: 15 MHz
Technology: FLASH
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC
Memory Organization: 264 Bytes x 4096 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 14ms
Part Status: Obsolete
Supplier Device Package: 28-SOIC
Memory Format: FLASH
Clock Frequency: 15 MHz
Technology: FLASH
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| APT80GA90S |
|
Hersteller: Microchip Technology
Description: IGBT PT 900V 145A D3PAK
Power - Max: 625 W
Current - Collector Pulsed (Icm): 239 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 145 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 47A, 4.7Ohm, 15V
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Td (on/off) @ 25°C: 18ns/149ns
IGBT Type: PT
Supplier Device Package: D3Pak
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: IGBT PT 900V 145A D3PAK
Power - Max: 625 W
Current - Collector Pulsed (Icm): 239 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 145 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 47A, 4.7Ohm, 15V
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Td (on/off) @ 25°C: 18ns/149ns
IGBT Type: PT
Supplier Device Package: D3Pak
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.67 EUR |
| 100+ | 15.26 EUR |
| APT8065BVRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Description: MOSFET N-CH 800V 13A TO247
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Produkt ist nicht verfügbar
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| APT8065BVFRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 13A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| APT8065SVRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 13A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 800V 13A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| APT8056BVRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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| APT8043BLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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| APT8043BFLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 20A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 800V 20A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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| APT8043SFLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 20A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 800V 20A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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| APT8030LVRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 800V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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| APT8030LVFRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 800V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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| APT80GP60B2G |
|
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TMAX
Power - Max: 1041 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: PT
Supplier Device Package: T-MAX™ [B2]
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: IGBT PT 600V 100A TMAX
Power - Max: 1041 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: PT
Supplier Device Package: T-MAX™ [B2]
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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| APT8030JVFR |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 25A ISOTOP
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: ISOTOP®
Description: MOSFET N-CH 800V 25A ISOTOP
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Active
Supplier Device Package: ISOTOP®
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 62.39 EUR |
| APT80GP60JDQ3 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Produkt ist nicht verfügbar
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| APT8014L2FLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 800V 52A 264 MAX
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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| APT8014L2LLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 800V 52A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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| APT8015JVR |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 44A ISOTOP
Description: MOSFET N-CH 800V 44A ISOTOP
Produkt ist nicht verfügbar
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| APT8015JVFR |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 44A ISOTOP
Description: MOSFET N-CH 800V 44A ISOTOP
Produkt ist nicht verfügbar
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| APT8011JLL |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 51A ISOTOP
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: ISOTOP®
Description: MOSFET N-CH 800V 51A ISOTOP
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: ISOTOP®
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 148.24 EUR |
| APT8011JFLL |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 51A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 800V 51A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT1201R6BVFRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 8A TO247
Description: MOSFET N-CH 1200V 8A TO247
Produkt ist nicht verfügbar
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| 47L64-I/SN |
|
Hersteller: Microchip Technology
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSC6001HE2A-014.7456 |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 14.7456MHZ CMOS SMD
Supplier Device Package: 4-VFLGA (1.6x1.2)
Base Resonator: MEMS
Frequency: 14.7456 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 1.3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
Description: MEMS OSC XO 14.7456MHZ CMOS SMD
Supplier Device Package: 4-VFLGA (1.6x1.2)
Base Resonator: MEMS
Frequency: 14.7456 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 1.3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Bag
auf Bestellung 776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 25+ | 1.79 EUR |
| 100+ | 1.62 EUR |
| 93LC46B-I/SN15KVAO |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 6ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 6ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| DSC1001DL2-013.5000 |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 13.5000MHZ CMOS SMD
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Tube
Base Resonator: MEMS
Frequency: 13.5 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 6.3mA
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Description: MEMS OSC XO 13.5000MHZ CMOS SMD
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Tube
Base Resonator: MEMS
Frequency: 13.5 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 6.3mA
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Produkt ist nicht verfügbar
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| PIC32MZ0512EFF144T-E/JWX |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
Produkt ist nicht verfügbar
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| PIC32MZ0512EFF144T-E/JWX |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
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| PIC32MZ0512EFF144-E/PL |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Description: IC MCU 32BIT 512KB FLASH 144LQFP
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| PIC32MZ0512EFF144-E/PH |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 144TQFP
Description: IC MCU 32BIT 512KB FLASH 144TQFP
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
| AT88SC0404CA-TH-T |
|
Hersteller: Microchip Technology
Description: IC SECURE MEMORY 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
Description: IC SECURE MEMORY 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| VSC8541XMV-01 |
|
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 68QFN
Description: IC TELECOM INTERFACE 68QFN
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)