Produkte > JAN > JANTXV2N6352

JANTXV2N6352


132530-lds-0315-datasheet
Hersteller:

auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details JANTXV2N6352

Description: TRANS NPN DARL 80V 5A TO66, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Bulk, Current - Collector (Ic) (Max): 5 A, Part Status: Active.

Weitere Produktangebote JANTXV2N6352

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
JANTXV2N6352 Microchip Technology 132530-lds-0315-datasheet Description: TRANS NPN DARL 80V 5A TO66
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV2N6352 132530-lds-0315-datasheet
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 5A TO66
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH