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FSP-AVR-DA-ISO26262 FSP-AVR-DA-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
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1+3585.01 EUR
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FBP-PIC18-K40-ISO26262 FBP-PIC18-K40-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K40
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: PIC18-K40
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FBP-PIC18-K83-ISO26262 FBP-PIC18-K83-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K83
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: PIC18-K83
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FBP-MEGAAVR-0-ISO26262 FBP-MEGAAVR-0-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: megaAVR-0
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: megaAVR-0
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FBP-PIC18-K80-ISO26262 FBP-PIC18-K80-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K80
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: PIC18-K80
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FBP-AVR-DA-ISO26262 FBP-AVR-DA-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: AVR DA
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FFP-AVR-DA-ISO26262 FFP-AVR-DA-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY FULL
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Full
Media Delivery Type: Electronically Delivered
Part Status: Active
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FSP-PIC18-Q84-ISO26262 FSP-PIC18-Q84-ISO26262 Microchip Technology Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-Q83/Q84
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
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1N5956BE3 1N5956BE3 Microchip Technology Description: DIODE ZENER 200V 1.19W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.19 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Produkt ist nicht verfügbar
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DSC1001BI2-013.0810T DSC1001BI2-013.0810T Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 13.0810MHZ LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
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DSC1001BI2-013.0810 DSC1001BI2-013.0810 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 13.0810MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
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1N5918B/TR 1N5918B/TR Microchip Technology Description: DIODE ZENER 5.1V 1.25W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918UR-1 1N5918UR-1 Microchip Technology Description: DIODE ZENER 5.1V 1.25W DO213AB
Tolerance: ±20%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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MX1N5918BUR-1 MX1N5918BUR-1 Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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MMA052AA Microchip Technology 1243823-mma052aa-datasheet Description: MMIC, DC-22GHZ, 0.5W AMPLIFIER D
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1N5811US/TR 1N5811US/TR Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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1N5811US/TR 1N5811US/TR Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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JANTXV1N5811US/TR JANTXV1N5811US/TR Microchip Technology Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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MNS1N5811US/TR MNS1N5811US/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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JANS1N5811URS JANS1N5811URS Microchip Technology Description: DIODE GEN PURP 150V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANS1N5811 JANS1N5811 Microchip Technology Description: DIODE GEN PURP 150V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5811USE3 1N5811USE3 Microchip Technology Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Produkt ist nicht verfügbar
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JANS1N5811US JANS1N5811US Microchip Technology Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5811A/TR 1N5811A/TR Microchip Technology 123509-lds-0168-pdf.pdf Description: DIODE STD REV 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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1N5811AUS/TR 1N5811AUS/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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1N5811URS 1N5811URS Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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MNS1N5811US MNS1N5811US Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5811U4 1N5811U4 Microchip Technology Description: DIODE GEN PURP 150V 6A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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JANTX1N5811URS/TR JANTX1N5811URS/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JAN1N5811URS/TR JAN1N5811URS/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5820/TR 1N5820/TR Microchip Technology 131997-lds-0303.pdf Description: DIODE SCHOTTKY 20V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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1N5820USE3 1N5820USE3 Microchip Technology 131998-lds-0303-1.pdf Description: DIODE SCHOTTKY 20V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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JAN1N5816R JAN1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANTXV1N5816 JANTXV1N5816 Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANS1N5816R JANS1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANTX1N5816R JANTX1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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1N5816E3 1N5816E3 Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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JANTXV1N5816R JANTXV1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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MIC2287C-24YML-TR MIC2287C-24YML-TR Microchip Technology mic2287c.pdf Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
Produkt ist nicht verfügbar
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MIC2287C-24YML-TR MIC2287C-24YML-TR Microchip Technology mic2287c.pdf Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
auf Bestellung 2521 Stücke:
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11+1.62 EUR
25+1.34 EUR
100+1.22 EUR
Mindestbestellmenge: 11
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JANTX1N4114CUR-1 JANTX1N4114CUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 20V 500MW DO213AA
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M1.5KE36A/TR Microchip Technology RF01008_rE.pdf Description: TVS DIODE 30.8VWM 49.9VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JANTXV1N4125-1 JANTXV1N4125-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 47V 500MW DO35
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AAP803A1 Microchip Technology Description: CONDENSER MICROPHONE PRE-AMP
Produkt ist nicht verfügbar
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VXM8-1015-28M6363000 Microchip Technology 1243761-vxm8 Description: CUSTOM SURFACE MOUNT XTAL
Produkt ist nicht verfügbar
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DSA6111JL2B-027.0000V05 Microchip Technology Description: MEMS OSCILLATOR SMD
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DSC6311JA1BB-027.0000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: SPREAD SPECTRUM MEMS OSC +-0.5%
Produkt ist nicht verfügbar
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DSA6331JL1CB-027.0000TVAO Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSA6101JL3B-027.0000BV02 Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Produkt ist nicht verfügbar
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DSC6001HE3B-027.1200T DSC6001HE3B-027.1200T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC SMD
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DSC6151HI2B-027.0000T Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-85C
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DSC6331JI2CB-027.0000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS CMOS OSC SMD
Produkt ist nicht verfügbar
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DSC6102MI2B-027.0000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
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DSA6311JA1AB-027.0000TVAO Microchip Technology Description: MEMS OSC AUTO -40C-125C
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DSC6001JI2B-027.0000T DSC6001JI2B-027.0000T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULTTA LOW POWET LVCMOS
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DSC6101JA2B-027.0000 DSC6101JA2B-027.0000 Microchip Technology Description: OSC MEMS LOW PWR LVCMOS
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JANTXV1N3822DUR-1 JANTXV1N3822DUR-1 Microchip Technology 5798-1n3821aur-datasheet Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Qualification: MIL-PRF-19500/115
Produkt ist nicht verfügbar
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JAN1N6167A Microchip Technology 1N6138_1N6173A.pdf Description: TVS DIODE 86.6VWM 151.3V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 86.6V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 151.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
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VX-805-0033-153M600000TR Microchip Technology Description: OSC XO VCXO 3.3V 6LDFN
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DSC1003DI2-024.5670 DSC1003DI2-024.5670 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 24.5670MHZ CMOS SMD
Produkt ist nicht verfügbar
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FSP-AVR-DA-ISO26262
FSP-AVR-DA-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3585.01 EUR
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FBP-PIC18-K40-ISO26262
FBP-PIC18-K40-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K40
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: PIC18-K40
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1537.48 EUR
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FBP-PIC18-K83-ISO26262
FBP-PIC18-K83-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K83
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: PIC18-K83
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1537.48 EUR
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FBP-MEGAAVR-0-ISO26262
FBP-MEGAAVR-0-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: megaAVR-0
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: megaAVR-0
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1537.48 EUR
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FBP-PIC18-K80-ISO26262
FBP-PIC18-K80-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K80
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: PIC18-K80
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1537.48 EUR
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FBP-AVR-DA-ISO26262
FBP-AVR-DA-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Utilized IC / Part: AVR DA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1537.48 EUR
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FFP-AVR-DA-ISO26262
FFP-AVR-DA-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY FULL
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Full
Media Delivery Type: Electronically Delivered
Part Status: Active
Produkt ist nicht verfügbar
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FSP-PIC18-Q84-ISO26262
FSP-PIC18-Q84-ISO26262
Hersteller: Microchip Technology
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-Q83/Q84
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3353.42 EUR
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1N5956BE3
1N5956BE3
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 1.19W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.19 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Produkt ist nicht verfügbar
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DSC1001BI2-013.0810T MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1001BI2-013.0810T
Hersteller: Microchip Technology
Description: MEMS OSC XO 13.0810MHZ LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
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DSC1001BI2-013.0810 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1001BI2-013.0810
Hersteller: Microchip Technology
Description: MEMS OSC XO 13.0810MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
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1N5918B/TR
1N5918B/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918UR-1
1N5918UR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Tolerance: ±20%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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MX1N5918BUR-1
MX1N5918BUR-1
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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MMA052AA 1243823-mma052aa-datasheet
Hersteller: Microchip Technology
Description: MMIC, DC-22GHZ, 0.5W AMPLIFIER D
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1+304.81 EUR
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1N5811US/TR LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
1N5811US/TR
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
126+9.81 EUR
Mindestbestellmenge: 126
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1N5811US/TR LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
1N5811US/TR
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.55 EUR
Mindestbestellmenge: 2
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JANTXV1N5811US/TR
JANTXV1N5811US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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MNS1N5811US/TR
MNS1N5811US/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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JANS1N5811URS
JANS1N5811URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANS1N5811
JANS1N5811
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5811USE3
1N5811USE3
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Produkt ist nicht verfügbar
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JANS1N5811US
JANS1N5811US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5811A/TR 123509-lds-0168-pdf.pdf
1N5811A/TR
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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1N5811AUS/TR
1N5811AUS/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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1N5811URS
1N5811URS
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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MNS1N5811US
MNS1N5811US
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5811U4
1N5811U4
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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JANTX1N5811URS/TR
JANTX1N5811URS/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JAN1N5811URS/TR
JAN1N5811URS/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5820/TR 131997-lds-0303.pdf
1N5820/TR
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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1N5820USE3 131998-lds-0303-1.pdf
1N5820USE3
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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JAN1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JAN1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANTXV1N5816 LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANTXV1N5816
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANS1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANS1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANTX1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANTX1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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1N5816E3 LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
1N5816E3
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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JANTXV1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANTXV1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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MIC2287C-24YML-TR mic2287c.pdf
MIC2287C-24YML-TR
Hersteller: Microchip Technology
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
Produkt ist nicht verfügbar
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MIC2287C-24YML-TR mic2287c.pdf
MIC2287C-24YML-TR
Hersteller: Microchip Technology
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
auf Bestellung 2521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
25+1.34 EUR
100+1.22 EUR
Mindestbestellmenge: 11
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JANTX1N4114CUR-1 5801-lds-0245-datasheet
JANTX1N4114CUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 500MW DO213AA
Produkt ist nicht verfügbar
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M1.5KE36A/TR RF01008_rE.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 30.8VWM 49.9VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JANTXV1N4125-1 129734-lds-0245-2-datasheet
JANTXV1N4125-1
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Produkt ist nicht verfügbar
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AAP803A1
Hersteller: Microchip Technology
Description: CONDENSER MICROPHONE PRE-AMP
Produkt ist nicht verfügbar
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VXM8-1015-28M6363000 1243761-vxm8
Hersteller: Microchip Technology
Description: CUSTOM SURFACE MOUNT XTAL
Produkt ist nicht verfügbar
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DSA6111JL2B-027.0000V05
Hersteller: Microchip Technology
Description: MEMS OSCILLATOR SMD
Produkt ist nicht verfügbar
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DSC6311JA1BB-027.0000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Hersteller: Microchip Technology
Description: SPREAD SPECTRUM MEMS OSC +-0.5%
Produkt ist nicht verfügbar
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DSA6331JL1CB-027.0000TVAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Produkt ist nicht verfügbar
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DSA6101JL3B-027.0000BV02 DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
Hersteller: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Produkt ist nicht verfügbar
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DSC6001HE3B-027.1200T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001HE3B-027.1200T
Hersteller: Microchip Technology
Description: MEMS OSC SMD
Produkt ist nicht verfügbar
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DSC6151HI2B-027.0000T
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Produkt ist nicht verfügbar
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DSC6331JI2CB-027.0000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Hersteller: Microchip Technology
Description: MEMS CMOS OSC SMD
Produkt ist nicht verfügbar
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DSC6102MI2B-027.0000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Produkt ist nicht verfügbar
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DSA6311JA1AB-027.0000TVAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO -40C-125C
Produkt ist nicht verfügbar
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DSC6001JI2B-027.0000T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI2B-027.0000T
Hersteller: Microchip Technology
Description: MEMS OSC ULTTA LOW POWET LVCMOS
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DSC6101JA2B-027.0000
DSC6101JA2B-027.0000
Hersteller: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
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JANTXV1N3822DUR-1 5798-1n3821aur-datasheet
JANTXV1N3822DUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Qualification: MIL-PRF-19500/115
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JAN1N6167A 1N6138_1N6173A.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 86.6VWM 151.3V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 86.6V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 151.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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VX-805-0033-153M600000TR
Hersteller: Microchip Technology
Description: OSC XO VCXO 3.3V 6LDFN
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DSC1003DI2-024.5670 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1003DI2-024.5670
Hersteller: Microchip Technology
Description: MEMS OSC XO 24.5670MHZ CMOS SMD
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