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JANS1N5811URS JANS1N5811URS Microchip Technology Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANS1N5811 JANS1N5811 Microchip Technology Description: DIODE GEN PURP 150V 6A B AXIAL
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/477
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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1N5811USE3 1N5811USE3 Microchip Technology Description: DIODE GEN PURP 150V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Technology: Standard
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 30 ns
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANS1N5811US JANS1N5811US Microchip Technology Description: DIODE GEN PURP 150V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Qualification: MIL-PRF-19500/477
Grade: Military
Supplier Device Package: B, SQ-MELF
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1N5811A/TR 1N5811A/TR Microchip Technology 123509-lds-0168-pdf.pdf Description: DIODE STD REV 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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1N5811AUS/TR 1N5811AUS/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
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1N5811URS 1N5811URS Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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MNS1N5811US MNS1N5811US Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N5811U4 1N5811U4 Microchip Technology Description: DIODE GEN PURP 150V 6A U4
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: U4
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 525 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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JANTX1N5811URS/TR JANTX1N5811URS/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
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JAN1N5811URS/TR JAN1N5811URS/TR Microchip Technology Description: DIODE GP 150V 3A SQ-MELF B
Qualification: MIL-PRF-19500/477
Grade: Military
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
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1N5820/TR 1N5820/TR Microchip Technology 131997-lds-0303.pdf Description: DIODE SCHOTTKY 20V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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1N5820USE3 1N5820USE3 Microchip Technology 131998-lds-0303-1.pdf Description: DIODE SCHOTTKY 20V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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JAN1N5816R JAN1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANTXV1N5816 JANTXV1N5816 Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANS1N5816R JANS1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANTX1N5816R JANTX1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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1N5816E3 1N5816E3 Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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JANTXV1N5816R JANTXV1N5816R Microchip Technology LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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MIC2287C-24YML-TR MIC2287C-24YML-TR Microchip Technology mic2287c.pdf Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Supplier Device Package: 8-MLF® (2x2)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 750mA (Switch)
Applications: Backlight
Operating Temperature: -40°C ~ 105°C (TJ)
Type: DC DC Regulator
Frequency: 1.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 10V
Voltage - Supply (Min): 2.5V
Dimming: Analog, PWM
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MIC2287C-24YML-TR MIC2287C-24YML-TR Microchip Technology mic2287c.pdf Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Voltage - Supply (Max): 10V
Voltage - Supply (Min): 2.5V
Dimming: Analog, PWM
Supplier Device Package: 8-MLF® (2x2)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 750mA (Switch)
Applications: Backlight
Operating Temperature: -40°C ~ 105°C (TJ)
Type: DC DC Regulator
Frequency: 1.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Packaging: Cut Tape (CT)
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25+1.34 EUR
100+1.22 EUR
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JANTX1N4114CUR-1 JANTX1N4114CUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 20V 500MW DO213AA
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M1.5KE36A/TR Microchip Technology RF01008_rE.pdf Description: TVS DIODE 30.8VWM 49.9VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANTXV1N4125-1 JANTXV1N4125-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 47V 500MW DO35
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AAP803A1 Microchip Technology Description: CONDENSER MICROPHONE PRE-AMP
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VXM8-1015-28M6363000 Microchip Technology 1243761-vxm8 Description: CUSTOM SURFACE MOUNT XTAL
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DSA6111JL2B-027.0000V05 Microchip Technology Description: MEMS OSCILLATOR SMD
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DSC6311JA1BB-027.0000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: SPREAD SPECTRUM MEMS OSC +-0.5%
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DSA6331JL1CB-027.0000TVAO Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSA6101JL3B-027.0000BV02 Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: OSC MEMS AUTO -40C-105C SMD
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DSC6001HE3B-027.1200T DSC6001HE3B-027.1200T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC SMD
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DSC6151HI2B-027.0000T Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-85C
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DSC6331JI2CB-027.0000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS CMOS OSC SMD
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DSC6102MI2B-027.0000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
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DSA6311JA1AB-027.0000TVAO Microchip Technology Description: MEMS OSC AUTO -40C-125C
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DSC6001JI2B-027.0000T DSC6001JI2B-027.0000T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULTTA LOW POWET LVCMOS
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DSC6101JA2B-027.0000 DSC6101JA2B-027.0000 Microchip Technology Description: OSC MEMS LOW PWR LVCMOS
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JANTXV1N3822DUR-1 JANTXV1N3822DUR-1 Microchip Technology 5798-1n3821aur-datasheet Description: DIODE ZENER 3.6V 1W DO213AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±1%
Packaging: Bulk
Qualification: MIL-PRF-19500/115
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Military
Supplier Device Package: DO-213AB (MELF, LL41)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
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JAN1N6167A Microchip Technology 1N6138_1N6173A.pdf Description: TVS DIODE 86.6VWM 151.3V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 151.3V
Voltage - Breakdown (Min): 104.5V
Bidirectional Channels: 1
Supplier Device Package: C, Axial
Voltage - Reverse Standoff (Typ): 86.6V
Current - Peak Pulse (10/1000µs): 9.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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VX-805-0033-153M600000TR Microchip Technology Description: OSC XO VCXO 3.3V 6LDFN
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DSC1003DI2-024.5670 DSC1003DI2-024.5670 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 24.5670MHZ CMOS SMD
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DSC1003DI2-024.5670T DSC1003DI2-024.5670T Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 24.5670MHZ CMOS SMD
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Le9642PQCT Le9642PQCT Microchip Technology Microsemi_Voice_Line_Circuits_Le9642_Data_Sheet_V8_PD-248193(web).pdf Description: IC TELECOM INTERFACE 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 4-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 25mA
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of Circuits: 2
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Le9642PQCT Le9642PQCT Microchip Technology Microsemi_Voice_Line_Circuits_Le9642_Data_Sheet_V8_PD-248193(web).pdf Description: IC TELECOM INTERFACE 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 4-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 25mA
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of Circuits: 2
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4+5.32 EUR
25+5.24 EUR
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LE9643AQCT LE9643AQCT Microchip Technology LE9643 Description: IC TELECOM INTERFACE 36QFN
Number of Circuits: 1
Supplier Device Package: 36-QFN (4x6)
Voltage - Supply: 95V
Operating Temperature: -40°C ~ 85°C
Interface: PCM, Serial, SPI
Function: Subscriber Line Interface Circuit
Mounting Type: Surface Mount
Package / Case: 36-QFN
Packaging: Tape & Reel (TR)
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LE9643AQCT LE9643AQCT Microchip Technology LE9643 Description: IC TELECOM INTERFACE 36QFN
Number of Circuits: 1
Supplier Device Package: 36-QFN (4x6)
Voltage - Supply: 95V
Operating Temperature: -40°C ~ 85°C
Interface: PCM, Serial, SPI
Function: Subscriber Line Interface Circuit
Mounting Type: Surface Mount
Package / Case: 36-QFN
Packaging: Cut Tape (CT)
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100+3.01 EUR
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LE79555-2BVC Microchip Technology LE79555_RevG_V3.pdf Description: IC TELECOM INTERFACE 44TQFP
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80+15.81 EUR
200+15.15 EUR
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JANTXV2N2605UB Microchip Technology Description: TRANS PNP 60V 0.03A UB
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DSC1104CL1-100.0000 Microchip Technology filehandler.aspx?ddocname=en576731 Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSA1223CL1-100M0000VAO DSA1223CL1-100M0000VAO Microchip Technology DSA12x234HighPerformanceDifferentialMEMSOscillatorsforAutomotiveDS20006378C.pdf Description: OSC MEMS AUTOMOTIVE SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1104CL1-100.0000T Microchip Technology filehandler.aspx?ddocname=en576731 Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSC1223CL1-100M0000 DSC1223CL1-100M0000 Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf Description: MEMS OSC, LOW JITTER, 100MHZ, LV
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DSC1224CL1-100M0000T DSC1224CL1-100M0000T Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf Description: MEMS OSC, LOW JITTER, 100MHZ, HC
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DSC1224CL1-100M0000 DSC1224CL1-100M0000 Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf Description: MEMS OSC, LOW JITTER, 100MHZ, HC
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DSC1223CL1-100M0000T DSC1223CL1-100M0000T Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf Description: MEMS OSC, LOW JITTER, 100MHZ, LV
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MCP6234T-E/SL MCP6234T-E/SL Microchip Technology 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 6 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 23 mA
Number of Circuits: 4
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 300 kHz
Slew Rate: 0.15V/µs
Current - Supply: 20µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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MCP6234T-E/SL MCP6234T-E/SL Microchip Technology 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 23 mA
Number of Circuits: 4
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 300 kHz
Slew Rate: 0.15V/µs
Current - Supply: 20µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 6 V
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15+1.21 EUR
25+1.04 EUR
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DSA1001DL3-045.0000VAO Microchip Technology filehandler.aspx?ddocname=en605035 Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSA1001DL3-125.0000VAO Microchip Technology filehandler.aspx?ddocname=en605035 Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSA1001DL3-012.5000VAO DSA1001DL3-012.5000VAO Microchip Technology Description: OSC MEMS AUTOMOTIVE SMD
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JANS1N5811URS
JANS1N5811URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JANS1N5811
JANS1N5811
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A B AXIAL
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/477
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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1N5811USE3
1N5811USE3
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Technology: Standard
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 30 ns
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JANS1N5811US
JANS1N5811US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Qualification: MIL-PRF-19500/477
Grade: Military
Supplier Device Package: B, SQ-MELF
Produkt ist nicht verfügbar
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1N5811A/TR 123509-lds-0168-pdf.pdf
1N5811A/TR
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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1N5811AUS/TR
1N5811AUS/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5811URS
1N5811URS
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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MNS1N5811US
MNS1N5811US
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5811U4
1N5811U4
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A U4
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: U4
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 525 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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JANTX1N5811URS/TR
JANTX1N5811URS/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JAN1N5811URS/TR
JAN1N5811URS/TR
Hersteller: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Qualification: MIL-PRF-19500/477
Grade: Military
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar
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1N5820/TR 131997-lds-0303.pdf
1N5820/TR
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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1N5820USE3 131998-lds-0303-1.pdf
1N5820USE3
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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JAN1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JAN1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANTXV1N5816 LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANTXV1N5816
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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JANS1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANS1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANTX1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANTX1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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1N5816E3 LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
1N5816E3
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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JANTXV1N5816R LDS-0145%2C+1N5812-16%28R%29%2C+MIL-PRF-19500-478.pdf
JANTXV1N5816R
Hersteller: Microchip Technology
Description: DIODE STD REV 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
Produkt ist nicht verfügbar
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MIC2287C-24YML-TR mic2287c.pdf
MIC2287C-24YML-TR
Hersteller: Microchip Technology
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Supplier Device Package: 8-MLF® (2x2)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 750mA (Switch)
Applications: Backlight
Operating Temperature: -40°C ~ 105°C (TJ)
Type: DC DC Regulator
Frequency: 1.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 10V
Voltage - Supply (Min): 2.5V
Dimming: Analog, PWM
Produkt ist nicht verfügbar
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MIC2287C-24YML-TR mic2287c.pdf
MIC2287C-24YML-TR
Hersteller: Microchip Technology
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Voltage - Supply (Max): 10V
Voltage - Supply (Min): 2.5V
Dimming: Analog, PWM
Supplier Device Package: 8-MLF® (2x2)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 750mA (Switch)
Applications: Backlight
Operating Temperature: -40°C ~ 105°C (TJ)
Type: DC DC Regulator
Frequency: 1.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Packaging: Cut Tape (CT)
auf Bestellung 2521 Stücke:
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AnzahlPreis
11+1.62 EUR
25+1.34 EUR
100+1.22 EUR
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JANTX1N4114CUR-1 5801-lds-0245-datasheet
JANTX1N4114CUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 500MW DO213AA
Produkt ist nicht verfügbar
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M1.5KE36A/TR RF01008_rE.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 30.8VWM 49.9VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JANTXV1N4125-1 129734-lds-0245-2-datasheet
JANTXV1N4125-1
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Produkt ist nicht verfügbar
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AAP803A1
Hersteller: Microchip Technology
Description: CONDENSER MICROPHONE PRE-AMP
Produkt ist nicht verfügbar
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VXM8-1015-28M6363000 1243761-vxm8
Hersteller: Microchip Technology
Description: CUSTOM SURFACE MOUNT XTAL
Produkt ist nicht verfügbar
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DSA6111JL2B-027.0000V05
Hersteller: Microchip Technology
Description: MEMS OSCILLATOR SMD
Produkt ist nicht verfügbar
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DSC6311JA1BB-027.0000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Hersteller: Microchip Technology
Description: SPREAD SPECTRUM MEMS OSC +-0.5%
Produkt ist nicht verfügbar
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DSA6331JL1CB-027.0000TVAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Produkt ist nicht verfügbar
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DSA6101JL3B-027.0000BV02 DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
Hersteller: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Produkt ist nicht verfügbar
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DSC6001HE3B-027.1200T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001HE3B-027.1200T
Hersteller: Microchip Technology
Description: MEMS OSC SMD
Produkt ist nicht verfügbar
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DSC6151HI2B-027.0000T
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Produkt ist nicht verfügbar
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DSC6331JI2CB-027.0000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Hersteller: Microchip Technology
Description: MEMS CMOS OSC SMD
Produkt ist nicht verfügbar
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DSC6102MI2B-027.0000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Produkt ist nicht verfügbar
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DSA6311JA1AB-027.0000TVAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO -40C-125C
Produkt ist nicht verfügbar
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DSC6001JI2B-027.0000T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI2B-027.0000T
Hersteller: Microchip Technology
Description: MEMS OSC ULTTA LOW POWET LVCMOS
Produkt ist nicht verfügbar
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DSC6101JA2B-027.0000
DSC6101JA2B-027.0000
Hersteller: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Produkt ist nicht verfügbar
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JANTXV1N3822DUR-1 5798-1n3821aur-datasheet
JANTXV1N3822DUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 3.6V 1W DO213AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±1%
Packaging: Bulk
Qualification: MIL-PRF-19500/115
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Military
Supplier Device Package: DO-213AB (MELF, LL41)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Produkt ist nicht verfügbar
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JAN1N6167A 1N6138_1N6173A.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 86.6VWM 151.3V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 151.3V
Voltage - Breakdown (Min): 104.5V
Bidirectional Channels: 1
Supplier Device Package: C, Axial
Voltage - Reverse Standoff (Typ): 86.6V
Current - Peak Pulse (10/1000µs): 9.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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VX-805-0033-153M600000TR
Hersteller: Microchip Technology
Description: OSC XO VCXO 3.3V 6LDFN
Produkt ist nicht verfügbar
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DSC1003DI2-024.5670 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1003DI2-024.5670
Hersteller: Microchip Technology
Description: MEMS OSC XO 24.5670MHZ CMOS SMD
Produkt ist nicht verfügbar
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DSC1003DI2-024.5670T MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1003DI2-024.5670T
Hersteller: Microchip Technology
Description: MEMS OSC XO 24.5670MHZ CMOS SMD
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Le9642PQCT Microsemi_Voice_Line_Circuits_Le9642_Data_Sheet_V8_PD-248193(web).pdf
Le9642PQCT
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 4-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 25mA
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
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Le9642PQCT Microsemi_Voice_Line_Circuits_Le9642_Data_Sheet_V8_PD-248193(web).pdf
Le9642PQCT
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 4-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 25mA
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of Circuits: 2
auf Bestellung 2871 Stücke:
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AnzahlPreis
4+5.32 EUR
25+5.24 EUR
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LE9643AQCT LE9643
LE9643AQCT
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 36QFN
Number of Circuits: 1
Supplier Device Package: 36-QFN (4x6)
Voltage - Supply: 95V
Operating Temperature: -40°C ~ 85°C
Interface: PCM, Serial, SPI
Function: Subscriber Line Interface Circuit
Mounting Type: Surface Mount
Package / Case: 36-QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LE9643AQCT LE9643
LE9643AQCT
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 36QFN
Number of Circuits: 1
Supplier Device Package: 36-QFN (4x6)
Voltage - Supply: 95V
Operating Temperature: -40°C ~ 85°C
Interface: PCM, Serial, SPI
Function: Subscriber Line Interface Circuit
Mounting Type: Surface Mount
Package / Case: 36-QFN
Packaging: Cut Tape (CT)
auf Bestellung 3545 Stücke:
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AnzahlPreis
5+3.75 EUR
25+3.12 EUR
100+3.01 EUR
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LE79555-2BVC LE79555_RevG_V3.pdf
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 44TQFP
auf Bestellung 277 Stücke:
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AnzahlPreis
3+16.47 EUR
80+15.81 EUR
200+15.15 EUR
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JANTXV2N2605UB
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.03A UB
Produkt ist nicht verfügbar
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DSC1104CL1-100.0000 filehandler.aspx?ddocname=en576731
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Produkt ist nicht verfügbar
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DSA1223CL1-100M0000VAO DSA12x234HighPerformanceDifferentialMEMSOscillatorsforAutomotiveDS20006378C.pdf
DSA1223CL1-100M0000VAO
Hersteller: Microchip Technology
Description: OSC MEMS AUTOMOTIVE SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
auf Bestellung 105 Stücke:
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AnzahlPreis
6+2.97 EUR
25+2.47 EUR
100+2.39 EUR
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DSC1104CL1-100.0000T filehandler.aspx?ddocname=en576731
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSC1223CL1-100M0000 DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf
DSC1223CL1-100M0000
Hersteller: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
Produkt ist nicht verfügbar
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DSC1224CL1-100M0000T DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf
DSC1224CL1-100M0000T
Hersteller: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, HC
Produkt ist nicht verfügbar
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DSC1224CL1-100M0000 DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf
DSC1224CL1-100M0000
Hersteller: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, HC
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DSC1223CL1-100M0000T DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011E.pdf
DSC1223CL1-100M0000T
Hersteller: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
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MCP6234T-E/SL 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf
MCP6234T-E/SL
Hersteller: Microchip Technology
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 6 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 23 mA
Number of Circuits: 4
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 300 kHz
Slew Rate: 0.15V/µs
Current - Supply: 20µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2600+0.9 EUR
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MCP6234T-E/SL 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf
MCP6234T-E/SL
Hersteller: Microchip Technology
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 23 mA
Number of Circuits: 4
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 300 kHz
Slew Rate: 0.15V/µs
Current - Supply: 20µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 6 V
auf Bestellung 2629 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.21 EUR
25+1.04 EUR
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DSA1001DL3-045.0000VAO filehandler.aspx?ddocname=en605035
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Produkt ist nicht verfügbar
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DSA1001DL3-125.0000VAO filehandler.aspx?ddocname=en605035
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
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DSA1001DL3-012.5000VAO
DSA1001DL3-012.5000VAO
Hersteller: Microchip Technology
Description: OSC MEMS AUTOMOTIVE SMD
Produkt ist nicht verfügbar
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