Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (280575) > Seite 1524 nach 4677
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| MXSMLG85CA | Microchip Technology |
 Description: TVS DIODE 85VWM 137VC SMLG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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MPS2R10-606/TR | Microchip Technology |
Description: DIODE SI PIN NON HERMETIC MMSM Packaging: Tape & Reel (TR) Diode Type: PIN - 1 Pair Common Anode Operating Temperature: -65°C ~ 125°C Voltage - Peak Reverse (Max): 150V Current - Max: 200 mA Power Dissipation (Max): 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MPS2R10-606/TR | Microchip Technology |
Description: DIODE SI PIN NON HERMETIC MMSM Packaging: Cut Tape (CT) Diode Type: PIN - 1 Pair Common Anode Operating Temperature: -65°C ~ 125°C Voltage - Peak Reverse (Max): 150V Current - Max: 200 mA Power Dissipation (Max): 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
.jpg "MSMCJLCE40Ae3") |
MSMCJLCE40Ae3 | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 64.5V Voltage - Breakdown (Min): 44.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMCJ) Voltage - Reverse Standoff (Typ): 40V Current - Peak Pulse (10/1000µs): 23.3A Capacitance @ Frequency: 100pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMLG150A | Microchip Technology |
Description: TVS DIODE 150VWM 243VC DO215AB Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 243V Voltage - Breakdown (Min): 167V Unidirectional Channels: 1 Supplier Device Package: DO-215AB (SMLG) Voltage - Reverse Standoff (Typ): 150V Current - Peak Pulse (10/1000µs): 12.4A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMLG100CA | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO215AB Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 162V Voltage - Breakdown (Min): 111V Bidirectional Channels: 1 Supplier Device Package: DO-215AB (SMLG) Voltage - Reverse Standoff (Typ): 100V Current - Peak Pulse (10/1000µs): 18.6A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMLG120CAe3 | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO215AB Part Status: Active Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 193V Voltage - Breakdown (Min): 133V Bidirectional Channels: 1 Supplier Device Package: DO-215AB (SMLG) Voltage - Reverse Standoff (Typ): 120V Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Packaging: Bulk Qualification: MIL-PRF-19500 Grade: Military Current - Peak Pulse (10/1000µs): 15.6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMLG12CA | Microchip Technology |
Description: TVS DIODE 12VWM 19.9VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 150.6A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-215AB (SMLG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMLG13CA | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139.4A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-215AB (SMLG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
.jpg "MSMCJLCE45A") |
MSMCJLCE45A | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMCJLCE90A | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMLG100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-215AB (SMLG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXLSMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMCJ10CA/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MASMCJ10CAE3/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MASMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXSMCJ10CAe3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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MSMCJ10CAE3/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXLSMCJ10CAe3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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MXSMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANS1N4494C | Microchip Technology |
Description: DIODE ZENER 160V 1.5W DO204AL Current - Reverse Leakage @ Vr: 250 nA @ 128 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 1.5 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 1000 Ohms Voltage - Zener (Nom) (Vz): 160 V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Bulk Qualification: MIL-PRF-19500/406 Grade: Military |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTXV1N4494C | Microchip Technology |
Description: DIODE ZENER 160V 1.5W DO204AL Current - Reverse Leakage @ Vr: 250 nA @ 128 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 1.5 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 1000 Ohms Voltage - Zener (Nom) (Vz): 160 V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Bulk Qualification: MIL-PRF-19500/406 Grade: Military |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N3440L | Microchip Technology |
Description: RH POWER BJT Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANKCBM2N3440 | Microchip Technology |
Description: RH POWER BJT Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N3440 | Microchip Technology |
Description: RH POWER BJT Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N3440 | Microchip Technology |
Description: RH POWER BJT Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSR2N3440L | Microchip Technology |
Description: RH POWER BJT Supplier Device Package: TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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ATWINC3400-MR210UA143-T | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Part Status: Active Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth, WiFi Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK Antenna Type: Antenna Not Included, U.FL Current - Transmitting: 24mA Current - Receiving: 23.7mA Protocol: 802.11b/g/n, Bluetooth v5.0 Data Rate: 400kbps Power - Output: 18.3dBm Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Memory Size: 256kB ROM, 420kB RAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -95dBm Package / Case: 36-SMD Module Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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ATWINC3400-MR210UA143-T | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Packaging: Cut Tape (CT) Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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ATWINC3400-MR210UA143 | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Packaging: Tray Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 163 Stücke: Lieferzeit 10-14 Tag (e) |
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| Jantxv2N6308 | Microchip Technology |
Description: TRANS NPN 350V 8A TO204AA Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-204AA (TO-3) DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| Jantx2N6308 | Microchip Technology |
Description: TRANS NPN 350V 8A TO204AA Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-204AA (TO-3) DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JAN2N6301 | Microchip Technology |
Description: TRANS NPN DARL 80V 500UA TO66 Qualification: MIL-PRF-19500/539 Grade: Military Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 µA Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANTX2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 500UA TO66 Qualification: MIL-PRF-19500/539 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 µA Grade: Military Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N6301E3 | Microchip Technology |
Description: TRANS NPN DARL 80V 500UA TO66 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 µA Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Package / Case: TO-213AA, TO-66-2 Packaging: Bulk Transistor Type: NPN - Darlington Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| 2N6301P | Microchip Technology |
Description: POWER BJT Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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2N6306 | Microchip Technology |
Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| 2N6308T1 | Microchip Technology |
Description: POWER BJT Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-204AD (TO-3) DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Operating Temperature: -65°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX2N6301P | Microchip Technology |
Description: POWER BJT Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTXV2N6301P | Microchip Technology |
Description: POWER BJT Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N6303 | Microchip Technology | Description: POWER BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 8A TO66 Packaging: Bulk Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JAN2N6301P | Microchip Technology |
Description: POWER BJT Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N6306T1 | Microchip Technology | Description: POWER BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX2N6301 | Microchip Technology |
Description: NPN TRANSISTOR Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
JANTXV1N4123-1 | Microchip Technology |
Description: DIODE ZENER 39V 500MW DO35 Qualification: MIL-PRF-19500/435 Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 39 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 173 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| OX-221-9100-20M000 | Microchip Technology | Description: OX-221-9100-20M000 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| OX-221-9100-20M000 | Microchip Technology | Description: OX-221-9100-20M000 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MDA3KP12.0CAE3 | Microchip Technology | Description: BI-DIRECTIONAL TVS _ SOIC-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
PL123-05HSC-R | Microchip Technology |
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC Number of Circuits: 1 Part Status: Active Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 8-SOP Differential - Input:Output: No/No Ratio - Input:Output: 1:5 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: Clock Frequency - Max: 134MHz Output: Clock Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
PL123-05HSC-R | Microchip Technology |
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC Number of Circuits: 1 Part Status: Active Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 8-SOP Differential - Input:Output: No/No Ratio - Input:Output: 1:5 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: Clock Frequency - Max: 134MHz Output: Clock Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 1493 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| MX555ABC250M000 | Microchip Technology |
Description: MEMS OSC XO LVCMOS SMD Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MX555ABC250M000-TR | Microchip Technology |
Description: MEMS OSC XO LVCMOS SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| LX5586ALL-TR | Microchip Technology |
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| LX5586ALL-TR | Microchip Technology |
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| LX5586ALL | Microchip Technology | Description: WIRELESS LAN FRONT-END MODULE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
25LC160D-E/SN16KVAO | Microchip Technology |
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOIC DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MXSMLG85CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 85VWM 137VC SMLG
Description: TVS DIODE 85VWM 137VC SMLG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS2R10-606/TR |
|
Hersteller: Microchip Technology
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Tape & Reel (TR)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Tape & Reel (TR)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MPS2R10-606/TR |
|
Hersteller: Microchip Technology
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Cut Tape (CT)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Cut Tape (CT)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJLCE40Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 23.3A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Description: TVS DIODE 40VWM 64.5VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 23.3A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG150A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC DO215AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-215AB (SMLG)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 12.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Description: TVS DIODE 150VWM 243VC DO215AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-215AB (SMLG)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 12.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG100CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO215AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-215AB (SMLG)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Description: TVS DIODE 100VWM 162VC DO215AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-215AB (SMLG)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG120CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO215AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Bidirectional Channels: 1
Supplier Device Package: DO-215AB (SMLG)
Voltage - Reverse Standoff (Typ): 120V
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Current - Peak Pulse (10/1000µs): 15.6A
Description: TVS DIODE 120VWM 193VC DO215AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 193V
Voltage - Breakdown (Min): 133V
Bidirectional Channels: 1
Supplier Device Package: DO-215AB (SMLG)
Voltage - Reverse Standoff (Typ): 120V
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Current - Peak Pulse (10/1000µs): 15.6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG12CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 19.9VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 12VWM 19.9VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG13CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJLCE45A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJLCE90A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG100Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXLSMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJ10CA/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MASMCJ10CAE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MASMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXSMCJ10CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJ10CAE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXLSMCJ10CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXSMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N4494C |
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Bulk
Qualification: MIL-PRF-19500/406
Grade: Military
Description: DIODE ZENER 160V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Bulk
Qualification: MIL-PRF-19500/406
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N4494C |
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Bulk
Qualification: MIL-PRF-19500/406
Grade: Military
Description: DIODE ZENER 160V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 1000 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Bulk
Qualification: MIL-PRF-19500/406
Grade: Military
Produkt ist nicht verfügbar
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| JANSP2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: RH POWER BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANKCBM2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Description: RH POWER BJT
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Produkt ist nicht verfügbar
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| JANSD2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: RH POWER BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANSP2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: RH POWER BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANSR2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Description: RH POWER BJT
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Produkt ist nicht verfügbar
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| ATWINC3400-MR210UA143-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 24mA
Current - Receiving: 23.7mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 400kbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 256kB ROM, 420kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 24mA
Current - Receiving: 23.7mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 400kbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 256kB ROM, 420kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 10.9 EUR |
| ATWINC3400-MR210UA143-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.34 EUR |
| ATWINC3400-MR210UA143 |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.91 EUR |
| Jantxv2N6308 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-204AA (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Description: TRANS NPN 350V 8A TO204AA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-204AA (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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| Jantx2N6308 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-204AA (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Description: TRANS NPN 350V 8A TO204AA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-204AA (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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| JAN2N6301 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Qualification: MIL-PRF-19500/539
Grade: Military
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 µA
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: TRANS NPN DARL 80V 500UA TO66
Qualification: MIL-PRF-19500/539
Grade: Military
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 µA
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANTXV2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
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| JAN2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
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| JANTX2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
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| JANTX2N6300 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 500UA TO66
Qualification: MIL-PRF-19500/539
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 µA
Grade: Military
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: TRANS NPN DARL 60V 500UA TO66
Qualification: MIL-PRF-19500/539
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 µA
Grade: Military
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N6301E3 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 µA
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Description: TRANS NPN DARL 80V 500UA TO66
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 µA
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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| 2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N6306 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
Produkt ist nicht verfügbar
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| 2N6308T1 |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-204AD (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Operating Temperature: -65°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Description: POWER BJT
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-204AD (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Operating Temperature: -65°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANTX2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANTXV2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N6303 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
Produkt ist nicht verfügbar
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| 2N6300 |
|
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Produkt ist nicht verfügbar
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| JAN2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Description: POWER BJT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Produkt ist nicht verfügbar
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| 2N6306T1 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| JANTX2N6301 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: NPN TRANSISTOR
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Produkt ist nicht verfügbar
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| JANTXV1N4123-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO35
Qualification: MIL-PRF-19500/435
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 39V 500MW DO35
Qualification: MIL-PRF-19500/435
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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| OX-221-9100-20M000 |
Hersteller: Microchip Technology
Description: OX-221-9100-20M000
Description: OX-221-9100-20M000
Produkt ist nicht verfügbar
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| OX-221-9100-20M000 |
Hersteller: Microchip Technology
Description: OX-221-9100-20M000
Description: OX-221-9100-20M000
Produkt ist nicht verfügbar
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| MDA3KP12.0CAE3 |
Hersteller: Microchip Technology
Description: BI-DIRECTIONAL TVS _ SOIC-8
Description: BI-DIRECTIONAL TVS _ SOIC-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| PL123-05HSC-R |
|
Hersteller: Microchip Technology
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 134MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 134MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| PL123-05HSC-R |
|
Hersteller: Microchip Technology
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 134MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 134MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 1493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 25+ | 1.77 EUR |
| 100+ | 1.62 EUR |
| LX5586ALL-TR |
|
Hersteller: Microchip Technology
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Produkt ist nicht verfügbar
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| LX5586ALL-TR |
|
Hersteller: Microchip Technology
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Produkt ist nicht verfügbar
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| LX5586ALL |
Hersteller: Microchip Technology
Description: WIRELESS LAN FRONT-END MODULE
Description: WIRELESS LAN FRONT-END MODULE
Produkt ist nicht verfügbar
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| 25LC160D-E/SN16KVAO |
|
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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