Technische Details 2N3850 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-210AA, TO-59-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V, Frequency - Transition: 20MHz, Supplier Device Package: TO-59, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 40 W.
Weitere Produktangebote 2N3850
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| 2N3850 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Frequency - Transition: 20MHz Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
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| 2N3850 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |