2N3850 Microchip Technology
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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Technische Details 2N3850 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-210AA, TO-59-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V, Frequency - Transition: 20MHz, Supplier Device Package: TO-59, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 40 W.
Weitere Produktangebote 2N3850
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N3850 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |