UPS835Le3/TR13 Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE SCHOTTKY 35V 8A POWERMITE3
Packaging: Cut Tape (CT)
Package / Case: Powermite®3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
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Technische Details UPS835Le3/TR13 Microchip Technology
Description: DIODE SCHOTTKY 35V 8A POWERMITE3, Packaging: Tape & Reel (TR), Package / Case: Powermite®3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 8A, Supplier Device Package: Powermite 3, Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A, Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V.
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Description: DIODE SCHOTTKY 35V 8A POWERMITE3 Packaging: Tape & Reel (TR) Package / Case: Powermite®3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V |
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