UPS835Le3/TR13 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 35V 8A POWERMITE3
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite 3
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Powermite®3
Packaging: Cut Tape (CT)
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Technische Details UPS835Le3/TR13 Microchip Technology
Description: DIODE SCHOTTKY 35V 8A POWERMITE3, Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 35 V, Operating Temperature - Junction: -55°C ~ 125°C, Supplier Device Package: Powermite 3, Current - Average Rectified (Io): 8A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Powermite®3, Packaging: Tape & Reel (TR).
Weitere Produktangebote UPS835Le3/TR13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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UPS835Le3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 35V 8A POWERMITE3Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Powermite 3 Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Powermite®3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| UPS835Le3/TR13 | Microchip Technology |
Schottky Diodes & Rectifiers Small-Signal Schottky |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| UPS835Le3/TR13 |
![]() |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 35V 8A POWERMITE3
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite 3
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Powermite®3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 35V 8A POWERMITE3
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite 3
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Powermite®3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| UPS835Le3/TR13 |
![]() |
Hersteller: Microchip Technology
Schottky Diodes & Rectifiers Small-Signal Schottky
Schottky Diodes & Rectifiers Small-Signal Schottky
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
