JANTXV1N5416/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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Technische Details JANTXV1N5416/TR Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL, Qualification: MIL-PRF-19500/411, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Tape & Reel (TR).
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JANTXV1N5416/TR | Hersteller : Microchip / Microsemi |
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