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SST25PF040C-40E/MF18GVAO SST25PF040C-40E/MF18GVAO Microchip Technology SST25PF040C-4-Mbit-3.3V-SPI-Serial-Flash-Data-Sheet-DS20005397E.pdf Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SST25PF040CT-40E/MF18GVAO SST25PF040CT-40E/MF18GVAO Microchip Technology SST25PF040C-4-Mbit-3.3V-SPI-Serial-Flash-Data-Sheet-DS20005397E.pdf Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCL5219-3.1BM5 Microchip Technology Description: 500MA-PEAK OUTPUT LDO REGULATOR
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760+0.71 EUR
Mindestbestellmenge: 760
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DSC2311KI2-R0060 DSC2311KI2-R0060 Microchip Technology DSC2311KI2-R0060.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI2-R0060T DSC2311KI2-R0060T Microchip Technology DSC2311KI2-R0060.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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ATSAM4SD32CB-ANR ATSAM4SD32CB-ANR Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 2MB FLASH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
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1+22.32 EUR
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100+18.78 EUR
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DSC1001BI1-027.0000 DSC1001BI1-027.0000 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 27.0000MHZ CMOS SMD
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MPLAD7.5KP36CA/TR MPLAD7.5KP36CA/TR Microchip Technology rf01084_rev_b.pdf Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MPLAD7.5KP36CA/TR MPLAD7.5KP36CA/TR Microchip Technology rf01084_rev_b.pdf Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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AT29LV040A-15JU-T AT29LV040A-15JU-T Microchip Technology AT29LV040A%2808%29.pdf Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-20JI AT29LV040A-20JI Microchip Technology AT29LV040A.pdf Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-20JC AT29LV040A-20JC Microchip Technology AT29LV040A.pdf Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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AT29LV040A-20TC AT29LV040A-20TC Microchip Technology AT29LV040A.pdf Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-15TC AT29LV040A-15TC Microchip Technology AT29LV040A.pdf Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DSA2311KI2-R0002VAO DSA2311KI2-R0002VAO Microchip Technology Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40
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DSA2311KL1-R0065TVAO Microchip Technology DSA2311-Crystal-less-Configurable-Two-Output-Clock-Generator-for-Automotive-DS20005893A.pdf Description: MEMS TWO-OUTPUT AUTO -40C-105C 5
Produkt ist nicht verfügbar
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Jantxv2N2432 Jantxv2N2432 Microchip Technology Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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JAN2N2432AUB/TR JAN2N2432AUB/TR Microchip Technology Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
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JAN2N2432UB/TR JAN2N2432UB/TR Microchip Technology Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
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Jan2N2432AUB Jan2N2432AUB Microchip Technology Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
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JAN2N2432UB JAN2N2432UB Microchip Technology Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
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2N2432AUB/TR 2N2432AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
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JANTXV2N2432UB/TR JANTXV2N2432UB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
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2N2432UB/TR 2N2432UB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
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JANTXV2N2432AUB/TR JANTXV2N2432AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
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PIC16F18076-I/P PIC16F18076-I/P Microchip Technology PIC16F18056-76-28-40-Pin-Microcontroller-Data-Sheet-40002325B.pdf Description: IC MCU 8BIT 28KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 28KB (28K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b SAR; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
DigiKey Programmable: Not Verified
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4+5.83 EUR
25+5.32 EUR
100+4.83 EUR
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MSR2N2222AUB/TR MSR2N2222AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2222AUB JANSL2N2222AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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JANTX1N5616 JANTX1N5616 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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2+8.8 EUR
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JAN1N5616US JAN1N5616US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JANTX1N5616US JANTX1N5616US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JAN1N5616/TR JAN1N5616/TR Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JAN1N5616 JAN1N5616 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N5616 JANTXV1N5616 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 79 Stücke:
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1+23.58 EUR
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JANTX1N5616US/TR JANTX1N5616US/TR Microchip Technology Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JANTXV1N5616US/TR JANTXV1N5616US/TR Microchip Technology Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JAN1N5616US/TR JAN1N5616US/TR Microchip Technology Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANS1N5616/TR JANS1N5616/TR Microchip Technology Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N5616US JANTXV1N5616US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANS1N5616 JANS1N5616 Microchip Technology Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANS1N5616US JANS1N5616US Microchip Technology Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Produkt ist nicht verfügbar
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JANTX1N5616/TR JANTX1N5616/TR Microchip Technology Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N5616/TR JANTXV1N5616/TR Microchip Technology Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANS1N5616US/TR JANS1N5616US/TR Microchip Technology Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Produkt ist nicht verfügbar
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1N5616US/TR 1N5616US/TR Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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1N5616/TR 1N5616/TR Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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SG7912K-883B Microchip Technology 11153-sg7900-pdf Description: IC REG LINEAR -12V 1.5A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-3
Voltage - Output (Min/Fixed): -12V
Grade: Military
Part Status: Active
PSRR: 54dB (120Hz)
Voltage Dropout (Max): 2.3V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: MIL-STD-883
auf Bestellung 89 Stücke:
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1+131.56 EUR
10+107.26 EUR
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CDS5532B-1 Microchip Technology Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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CDS5532BUR-1 Microchip Technology Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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CDS5532BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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CDS5532B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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GC2521-450A Microchip Technology Description: SI SRD NON HERMETIC EPSM SMT
Produkt ist nicht verfügbar
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CDLL5550 Microchip Technology Description: UFR,FRR
Packaging: Bulk
Produkt ist nicht verfügbar
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MXPLAD36KP200A Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MPLAD36KP200AE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 200VWM 322VC PLAD
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MAPLAD18KP200A Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MAPLAD18KP200AE3 Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MXPLAD18KP200CAE3 Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MPLAD36KP200A MPLAD36KP200A Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 112A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXPLAD15KP200A Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SST25PF040C-40E/MF18GVAO SST25PF040C-4-Mbit-3.3V-SPI-Serial-Flash-Data-Sheet-DS20005397E.pdf
SST25PF040C-40E/MF18GVAO
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SST25PF040CT-40E/MF18GVAO SST25PF040C-4-Mbit-3.3V-SPI-Serial-Flash-Data-Sheet-DS20005397E.pdf
SST25PF040CT-40E/MF18GVAO
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCL5219-3.1BM5
Hersteller: Microchip Technology
Description: 500MA-PEAK OUTPUT LDO REGULATOR
auf Bestellung 150000 Stücke:
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Anzahl Preis
760+0.71 EUR
Mindestbestellmenge: 760
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DSC2311KI2-R0060 DSC2311KI2-R0060.pdf
DSC2311KI2-R0060
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Produkt ist nicht verfügbar
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DSC2311KI2-R0060T DSC2311KI2-R0060.pdf
DSC2311KI2-R0060T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Produkt ist nicht verfügbar
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ATSAM4SD32CB-ANR Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4SD32CB-ANR
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
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Anzahl Preis
1+22.32 EUR
25+20.27 EUR
100+18.78 EUR
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DSC1001BI1-027.0000 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1001BI1-027.0000
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.0000MHZ CMOS SMD
Produkt ist nicht verfügbar
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MPLAD7.5KP36CA/TR rf01084_rev_b.pdf
MPLAD7.5KP36CA/TR
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
auf Bestellung 200 Stücke:
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Anzahl Preis
200+8.42 EUR
Mindestbestellmenge: 200
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MPLAD7.5KP36CA/TR rf01084_rev_b.pdf
MPLAD7.5KP36CA/TR
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
auf Bestellung 200 Stücke:
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AT29LV040A-15JU-T AT29LV040A%2808%29.pdf
AT29LV040A-15JU-T
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-20JI AT29LV040A.pdf
AT29LV040A-20JI
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-20JC AT29LV040A.pdf
AT29LV040A-20JC
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-20TC AT29LV040A.pdf
AT29LV040A-20TC
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT29LV040A-15TC AT29LV040A.pdf
AT29LV040A-15TC
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DSA2311KI2-R0002VAO
DSA2311KI2-R0002VAO
Hersteller: Microchip Technology
Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40
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DSA2311KL1-R0065TVAO DSA2311-Crystal-less-Configurable-Two-Output-Clock-Generator-for-Automotive-DS20005893A.pdf
Hersteller: Microchip Technology
Description: MEMS TWO-OUTPUT AUTO -40C-105C 5
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Jantxv2N2432
Jantxv2N2432
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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JAN2N2432AUB/TR
JAN2N2432AUB/TR
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
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JAN2N2432UB/TR
JAN2N2432UB/TR
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
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Jan2N2432AUB
Jan2N2432AUB
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JAN2N2432UB
JAN2N2432UB
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N2432AUB/TR
2N2432AUB/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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JANTXV2N2432UB/TR
JANTXV2N2432UB/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N2432UB/TR
2N2432UB/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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JANTXV2N2432AUB/TR
JANTXV2N2432AUB/TR
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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PIC16F18076-I/P PIC16F18056-76-28-40-Pin-Microcontroller-Data-Sheet-40002325B.pdf
PIC16F18076-I/P
Hersteller: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 28KB (28K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b SAR; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
DigiKey Programmable: Not Verified
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
25+5.32 EUR
100+4.83 EUR
Mindestbestellmenge: 4
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MSR2N2222AUB/TR
MSR2N2222AUB/TR
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANSL2N2222AUB
JANSL2N2222AUB
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTX1N5616 11061-sd46a-datasheet
JANTX1N5616
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.8 EUR
Mindestbestellmenge: 2
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JAN1N5616US 10967-sa7-45-datasheet
JAN1N5616US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTX1N5616US 10967-sa7-45-datasheet
JANTX1N5616US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JAN1N5616/TR 11061-sd46a-datasheet
JAN1N5616/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JAN1N5616 11061-sd46a-datasheet
JAN1N5616
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV1N5616 11061-sd46a-datasheet
JANTXV1N5616
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.58 EUR
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JANTX1N5616US/TR
JANTX1N5616US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV1N5616US/TR
JANTXV1N5616US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JAN1N5616US/TR
JAN1N5616US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANS1N5616/TR
JANS1N5616/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N5616US 10967-sa7-45-datasheet
JANTXV1N5616US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANS1N5616
JANS1N5616
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANS1N5616US
JANS1N5616US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Produkt ist nicht verfügbar
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JANTX1N5616/TR
JANTX1N5616/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV1N5616/TR
JANTXV1N5616/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANS1N5616US/TR
JANS1N5616US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5616US/TR 10967-sa7-45-datasheet
1N5616US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
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1N5616/TR 11061-sd46a-datasheet
1N5616/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SG7912K-883B 11153-sg7900-pdf
Hersteller: Microchip Technology
Description: IC REG LINEAR -12V 1.5A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-3
Voltage - Output (Min/Fixed): -12V
Grade: Military
Part Status: Active
PSRR: 54dB (120Hz)
Voltage Dropout (Max): 2.3V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: MIL-STD-883
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+131.56 EUR
10+107.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CDS5532B-1
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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CDS5532BUR-1
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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CDS5532BUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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CDS5532B-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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GC2521-450A
Hersteller: Microchip Technology
Description: SI SRD NON HERMETIC EPSM SMT
Produkt ist nicht verfügbar
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CDLL5550
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Bulk
Produkt ist nicht verfügbar
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MXPLAD36KP200A MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MPLAD36KP200AE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MAPLAD18KP200A MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MAPLAD18KP200AE3 MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
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MXPLAD18KP200CAE3 MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
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MPLAD36KP200A MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MPLAD36KP200A
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 112A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD15KP200A 9522-mplad15kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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