Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276110) > Seite 1545 nach 4602
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AT29LV040A-15TC | Microchip Technology |
 Description: IC FLASH 4MBIT PARALLEL 32TSOPPackaging: Tray Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 3V ~ 3.6V Technology: FLASH Memory Format: FLASH Supplier Device Package: 32-TSOP Write Cycle Time - Word, Page: 20ms Memory Interface: Parallel Access Time: 150 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DSA2311KI2-R0002VAO | Microchip Technology | Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40 |
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| DSA2311KL1-R0065TVAO | Microchip Technology |
Description: MEMS TWO-OUTPUT AUTO -40C-105C 5 |
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Jantxv2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Qualification: MIL-PRF-19500/313 |
Produkt ist nicht verfügbar |
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JAN2N2432AUB/TR | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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JAN2N2432UB/TR | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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Jan2N2432AUB | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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JAN2N2432UB | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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2N2432AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW |
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JANTXV2N2432UB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
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2N2432UB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
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JANTXV2N2432AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW |
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PIC16F18076-I/P | Microchip Technology |
Description: IC MCU 8BIT 28KB FLASH 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 32MHz Program Memory Size: 28KB (28K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b SAR; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-PDIP Number of I/O: 35 DigiKey Programmable: Not Verified |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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MSR2N2222AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSL2N2222AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANTX1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JANTX1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JAN1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JAN1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JAN1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANS1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANS1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANS1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A |
Produkt ist nicht verfügbar |
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JANTX1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANS1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A |
Produkt ist nicht verfügbar |
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1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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| SG7912K-883B | Microchip Technology |
Description: IC REG LINEAR -12V 1.5A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1.5A Operating Temperature: -55°C ~ 125°C Output Configuration: Negative Current - Quiescent (Iq): 4 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-3 Voltage - Output (Min/Fixed): -12V Grade: Military Part Status: Active PSRR: 54dB (120Hz) Voltage Dropout (Max): 2.3V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit Qualification: MIL-STD-883 |
auf Bestellung 89 Stücke: Lieferzeit 10-14 Tag (e) |
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| CDS5532B-1 | Microchip Technology | Description: VOLTAGE REGULATOR |
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| CDS5532BUR-1 | Microchip Technology | Description: VOLTAGE REGULATOR |
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| CDS5532BUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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| CDS5532B-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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| GC2521-450A | Microchip Technology | Description: SI SRD NON HERMETIC EPSM SMT |
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| CDLL5550 | Microchip Technology |
Description: UFR,FRR Packaging: Bulk |
Produkt ist nicht verfügbar |
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| MXPLAD36KP200A | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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| MPLAD36KP200AE3 | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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| MAPLAD18KP200A | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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| MAPLAD18KP200AE3 | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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| MXPLAD18KP200CAE3 | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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MPLAD36KP200A | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 112A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 222V Voltage - Clamping (Max) @ Ipp: 322V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MXPLAD15KP200A | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 47A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 222V Voltage - Clamping (Max) @ Ipp: 322V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
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| MXPLAD36KP200CA | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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| MAPLAD36KP200A | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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| MXLPLAD36KP200CA | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD |
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 |
MXLRT100KP200CA | Microchip Technology |
Description: TVS DIODE 200VWM 392VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 222V Voltage - Clamping (Max) @ Ipp: 392V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTX1N3334RB | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N3334B | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTXV1N3334B | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN1N3334RB | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTXV1N3334RB | Microchip Technology | Description: ZENER DIODE |
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Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN1N3334B | Microchip Technology | Description: ZENER DIODE |
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Im Einkaufswagen Stück im Wert von UAH | |||||||
| ATSHA204A-TCSMS | Microchip Technology |
Description: IC AUTHENTICATION CHIP 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Authentication Chip Supplier Device Package: 8-SOIC Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
ATSHA204A-TCSMU | Microchip Technology |
Description: IC AUTHENTICATION CHIP 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Authentication Chip Supplier Device Package: 8-UDFN (2x3) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
MA15KP58CA | Microchip Technology |
Description: TVS DIODE 58VWM 94VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 160A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 94V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AT29LV040A-15TC |
|
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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Im Einkaufswagen
Stück im Wert von UAH
| DSA2311KI2-R0002VAO |
Hersteller: Microchip Technology
Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40
Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSA2311KL1-R0065TVAO |
|
Hersteller: Microchip Technology
Description: MEMS TWO-OUTPUT AUTO -40C-105C 5
Description: MEMS TWO-OUTPUT AUTO -40C-105C 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Jantxv2N2432 |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2432AUB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2432UB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Jan2N2432AUB |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2432UB |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2432AUB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N2432UB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2432UB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N2432AUB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PIC16F18076-I/P |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 28KB (28K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b SAR; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 28KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 28KB (28K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b SAR; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
DigiKey Programmable: Not Verified
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.83 EUR |
| 25+ | 5.32 EUR |
| 100+ | 4.83 EUR |
| MSR2N2222AUB/TR |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSL2N2222AUB |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N5616 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.8 EUR |
| JAN1N5616US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N5616US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5616/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5616 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5616 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.58 EUR |
| JANTX1N5616US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5616US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5616US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N5616/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5616US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N5616 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N5616US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N5616/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5616/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N5616US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5616US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5616/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SG7912K-883B |
|
Hersteller: Microchip Technology
Description: IC REG LINEAR -12V 1.5A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-3
Voltage - Output (Min/Fixed): -12V
Grade: Military
Part Status: Active
PSRR: 54dB (120Hz)
Voltage Dropout (Max): 2.3V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: MIL-STD-883
Description: IC REG LINEAR -12V 1.5A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-3
Voltage - Output (Min/Fixed): -12V
Grade: Military
Part Status: Active
PSRR: 54dB (120Hz)
Voltage Dropout (Max): 2.3V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: MIL-STD-883
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 131.56 EUR |
| 10+ | 107.26 EUR |
| CDS5532B-1 |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDS5532BUR-1 |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDS5532BUR-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDS5532B-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GC2521-450A |
Hersteller: Microchip Technology
Description: SI SRD NON HERMETIC EPSM SMT
Description: SI SRD NON HERMETIC EPSM SMT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD36KP200A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPLAD36KP200AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAPLAD18KP200A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAPLAD18KP200AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD18KP200CAE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPLAD36KP200A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 112A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 112A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD15KP200A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD36KP200CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
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| MAPLAD36KP200A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
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| MXLPLAD36KP200CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Description: TVS DIODE 200VWM 322VC PLAD
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| MXLRT100KP200CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 392VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 392V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 200VWM 392VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 392V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| JANTX1N3334RB |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
Produkt ist nicht verfügbar
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| JANTX1N3334B |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| JANTXV1N3334B |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| JAN1N3334RB |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| JANTXV1N3334RB |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| JAN1N3334B |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| ATSHA204A-TCSMS |
Hersteller: Microchip Technology
Description: IC AUTHENTICATION CHIP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Authentication Chip
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC AUTHENTICATION CHIP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Authentication Chip
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| ATSHA204A-TCSMU |
Hersteller: Microchip Technology
Description: IC AUTHENTICATION CHIP 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Authentication Chip
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC AUTHENTICATION CHIP 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Authentication Chip
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
DigiKey Programmable: Not Verified
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| MA15KP58CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 58VWM 94VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 94V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 58VWM 94VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 94V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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