Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (341658) > Seite 1586 nach 5695
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AT24C01A-10PC-2.7 | Microchip Technology |
 Description: IC EEPROM 1KBIT I2C 400KHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AT24C01A-10SI | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| MXSMLG7.0A | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMLG |
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1N5307UR-1 | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V |
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JANTXV1N5307UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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JANTX1N5307UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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JAN1N5307UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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1N5307UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V |
Produkt ist nicht verfügbar |
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JANS1N5307UR-1 | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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JANS1N5307UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.64MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.64mA Voltage - Limiting (Max): 2V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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MQ2N5115UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Qualification: MIL-PRF-19500 |
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MX2N5114UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 75 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MV2N5115UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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2N5116UA/TR | Microchip Technology |
Description: JFET P-CH 30V UA Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UA Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
Produkt ist nicht verfügbar |
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MQ2N5116UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MX2N5114UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 75 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MQ2N5115UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MQ2N5116UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MX2N5115UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MX2N5116UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MX2N5115UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MQ2N5115 | Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MV2N5116UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MX2N5116UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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SY100ELT25ZG-TR | Microchip Technology |
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: ECL Number of Circuits: 1 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SY100ELT25ZG-TR | Microchip Technology |
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: ECL Number of Circuits: 1 |
auf Bestellung 3349 Stücke: Lieferzeit 10-14 Tag (e) |
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| MXLPLAD18KP14CA | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD |
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| MXPLAD18KP14CA | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 776A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 18000W (18kW) Power Line Protection: No Part Status: Active |
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MAPLAD7.5KP14CA | Microchip Technology |
Description: TVS DIODE |
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| MAPLAD18KP14CAE3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 776A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 18000W (18kW) Power Line Protection: No Part Status: Active |
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| MXPLAD18KP14AE3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD |
Produkt ist nicht verfügbar |
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| MECH-SAMPLE-CQ256NHS | Microchip Technology | Description: MECH-SAMPLE-CQ256NHS |
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| LG896_DAISY_CHAIN | Microchip Technology | Description: LG896_DAISY_CHAIN |
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| LG484_DAISY_CHAIN | Microchip Technology | Description: LG484_DAISY_CHAIN |
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93AA66AT-I/SN | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
Produkt ist nicht verfügbar |
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93AA66AT-I/SN | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
auf Bestellung 1435 Stücke: Lieferzeit 10-14 Tag (e) |
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93AA56CT-I/SN | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 8, 128 x 16 |
Produkt ist nicht verfügbar |
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93AA56CT-I/SN | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 8, 128 x 16 |
Produkt ist nicht verfügbar |
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JANS2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
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JAN2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
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JANTX2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
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JANTXV2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO46-3 |
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JAN2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO-46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: TO-46-3 Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTX2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO46 Packaging: Bulk Package / Case: TO-46-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANS2N3737UB | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV2N3737UB/TR | Microchip Technology | Description: SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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|
2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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|
JANTXV2N3737UB | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| S306070F | Microchip Technology |
Description: STD RECTIFIER Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| R306070F | Microchip Technology |
Description: STD RECTIFIER Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N3302 | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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1N4916A/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTX1N4110DUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANS1N4110CUR-1 | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANS1N4110UR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV1N4110CUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANS1N4110DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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Jantx1N4110-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV1N4110DUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANTXV1N4110CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AT24C01A-10PC-2.7 |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT24C01A-10SI |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXSMLG7.0A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMLG
Description: TVS DIODE 7VWM 12VC SMLG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5307UR-1 |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5307UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N5307UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5307UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5307UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N5307UR-1 |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N5307UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MQ2N5115UB/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MX2N5114UB/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MV2N5115UB/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116UA/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UA
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET P-CH 30V UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UA
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MQ2N5116UB |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MX2N5114UB |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MQ2N5115UB |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MQ2N5116UB/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MX2N5115UB/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MX2N5116UB |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MX2N5115UB |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MQ2N5115 |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MV2N5116UB |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MX2N5116UB/TR |
|
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SY100ELT25ZG-TR |
|
Hersteller: Microchip Technology
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 3.76 EUR |
| SY100ELT25ZG-TR |
|
Hersteller: Microchip Technology
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
auf Bestellung 3349 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.68 EUR |
| 25+ | 3.89 EUR |
| 100+ | 3.76 EUR |
| MXLPLAD18KP14CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Description: TVS DIODE 14VWM 23.2VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD18KP14CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAPLAD7.5KP14CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Description: TVS DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAPLAD18KP14CAE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXPLAD18KP14AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Description: TVS DIODE 14VWM 23.2VC PLAD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MECH-SAMPLE-CQ256NHS |
Hersteller: Microchip Technology
Description: MECH-SAMPLE-CQ256NHS
Description: MECH-SAMPLE-CQ256NHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LG896_DAISY_CHAIN |
Hersteller: Microchip Technology
Description: LG896_DAISY_CHAIN
Description: LG896_DAISY_CHAIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LG484_DAISY_CHAIN |
Hersteller: Microchip Technology
Description: LG484_DAISY_CHAIN
Description: LG484_DAISY_CHAIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 93AA66AT-I/SN |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 93AA66AT-I/SN |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.57 EUR |
| 93AA56CT-I/SN |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 93AA56CT-I/SN |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
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| JANS2N3737UB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
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| JAN2N3737UB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
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| JANTX2N3737UB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
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| JANTXV2N3737 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46-3
Description: TRANS NPN 40V 1.5A TO46-3
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| JAN2N3737 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
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| JANTX2N3737 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A TO46
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
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| JANS2N3737UB |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
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| JANTXV2N3737UB/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Description: SMALL-SIGNAL BJT
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| 2N3737UB/TR |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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Stück im Wert von UAH
| JANTXV2N3737UB |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
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| 1N4916A/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
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| JANTX1N4110DUR-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
Produkt ist nicht verfügbar
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| JANS1N4110CUR-1 |
Hersteller: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| JANS1N4110UR-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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| JANTXV1N4110CUR-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
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| JANS1N4110DUR-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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| Jantx1N4110-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
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| JANTXV1N4110DUR-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
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| JANTXV1N4110CUR-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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