Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (278439) > Seite 1587 nach 4641
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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| JANSM2N5151U3 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANSL2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANSR2N5151U3 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANKCCL2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSR2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANSL2N5151U3 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANSP2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANSF2N5151U3 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANS2N5151U3 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANKCCP2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANSD2N5151U3 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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JANKCCD2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANSP2N5151U3 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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2N5151U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: U3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSM2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANKCCM2N5151 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N5322E3 | Microchip Technology |
Description: POWER BJT Power - Max: 10 W Voltage - Collector Emitter Breakdown (Max): 75 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-5AA Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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AVR16DD14-I/SL | Microchip Technology |
 Description: IC MCU 8BIT 16KB FLASH 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: AVR Data Converters: A/D 7x12b; D/A 1x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 14-SOIC Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified |
auf Bestellung 3983 Stücke: Lieferzeit 10-14 Tag (e) |
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ATWINC3400-MR210UA142 | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Operating Temperature: -40°C ~ 85°C Memory Size: 1MB Flash, 256kB ROM, 708kB RAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -95dBm Package / Case: 36-SMD Module Packaging: Tray Part Status: Active Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth, WiFi Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK Utilized IC / Part: ATWINC3400 Antenna Type: Antenna Not Included, U.FL Current - Transmitting: 23.68mA ~ 275mA Current - Receiving: 23.68mA ~ 63.9mA Protocol: 802.11b/g/n, Bluetooth v5.0 Data Rate: 72.2Mbps Power - Output: 18.3dBm Voltage - Supply: 2.7V ~ 3.6V DigiKey Programmable: Not Verified |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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ATWINC3400-MR210UA142-T | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD DigiKey Programmable: Not Verified Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth, WiFi Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK Utilized IC / Part: ATWINC3400 Antenna Type: Antenna Not Included, U.FL Current - Transmitting: 23.68mA ~ 275mA Current - Receiving: 23.68mA ~ 63.9mA Protocol: 802.11b/g/n, Bluetooth v5.0 Data Rate: 72.2Mbps Power - Output: 18.3dBm Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Memory Size: 1MB Flash, 256kB ROM, 708kB RAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -95dBm Package / Case: 36-SMD Module Packaging: Tape & Reel (TR) |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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ATWINC3400-MR210UA142-T | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -95dBm Package / Case: 36-SMD Module Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth, WiFi Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK Utilized IC / Part: ATWINC3400 Antenna Type: Antenna Not Included, U.FL Current - Transmitting: 23.68mA ~ 275mA Current - Receiving: 23.68mA ~ 63.9mA Protocol: 802.11b/g/n, Bluetooth v5.0 Data Rate: 72.2Mbps Power - Output: 18.3dBm Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Memory Size: 1MB Flash, 256kB ROM, 708kB RAM |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| ATWINC3400-MR210CA123 | Microchip Technology | Description: RX TXRX MODULE WIFI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| ATWINC3400-MR210UA123 | Microchip Technology | Description: RX TXRX MODULE WIFI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MXPLAD30KP43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC PLAD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MXPLAD30KP51Ae3 | Microchip Technology |
Description: TVS DIODE 51VWM 82.4VC PLAD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MXPLAD30KP22CAe3 | Microchip Technology |
Description: TVS DIODE 22VWM 36.4VC PLAD Part Status: Active Power Line Protection: No Power - Peak Pulse: 30000W (30kW) Voltage - Clamping (Max) @ Ipp: 36.4V Voltage - Breakdown (Min): 24.4V Bidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 822A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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24CS512T-E/MS66KVAO | Microchip Technology |
Description: 512K I2C SERIAL EEPROM, EXT, 8-M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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HV20220TQ-G | Microchip Technology |
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW Packaging: Tray Package / Case: 48-TQFP Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C (TA) Applications: Ultrasound On-State Resistance (Max): 38Ohm -3db Bandwidth: 50MHz Supplier Device Package: 48-TQFP (7x7) Voltage - Supply, Single (V+): 4.5V ~ 13.2V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Part Status: Active Number of Channels: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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HV20220TQ-G-M931 | Microchip Technology |
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW Supplier Device Package: 48-TQFP (7x7) -3db Bandwidth: 50MHz On-State Resistance (Max): 38Ohm Applications: Ultrasound Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TQFP Packaging: Tape & Reel (TR) Number of Channels: 8 Part Status: Active Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 4.5V ~ 13.2V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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HV20220TQ-G-M931 | Microchip Technology |
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW -3db Bandwidth: 50MHz On-State Resistance (Max): 38Ohm Applications: Ultrasound Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TQFP Packaging: Cut Tape (CT) Number of Channels: 8 Part Status: Active Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 4.5V ~ 13.2V Supplier Device Package: 48-TQFP (7x7) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AT27C010L-70TC | Microchip Technology |
Description: IC EPROM 1MBIT PARALLEL 32TSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| Jan2N3485A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO46 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 600 mA Grade: Military Supplier Device Package: TO-46 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/392 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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Jan2N3498 | Microchip Technology |
Description: TRANS NPN 100V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Qualification: MIL-PRF-19500/366 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| Jantxv2N3485A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW Qualification: MIL-PRF-19500/392 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 148 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N3486 | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO-46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-46 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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Jantxv2N3498 | Microchip Technology |
Description: TRANS NPN 100V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Qualification: MIL-PRF-19500/366 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| 2N3485A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO46 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: TO-46 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MSMBJ5349B | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| MSMBG5349B | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| MSMBG5349B/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| MSMBG5349BE3 | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| MSMBJ5349BE3 | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
JAN1N4981CUS | Microchip Technology |
Description: DIODE ZENER 91V 5W D5B Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 5 W Part Status: Active Supplier Device Package: D-5B Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 91 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: SQ-MELF, E Tolerance: ±2% Packaging: Bulk Current - Reverse Leakage @ Vr: 2 µA @ 69.2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
MAP4KE68CAe3 | Microchip Technology |
Description: TVS DIODE 58.1VWM 92VC DO204AL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| APTMC120TAM34CT3AG | Microchip Technology |
Description: POWER MODULE - SIC MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
AVR16DD20-I/REB | Microchip Technology |
Description: IC MCU 8BIT 16KB FLASH 20VQFN Packaging: Tray Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: AVR Data Converters: A/D 13x12b; D/A 1x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 20-VQFN (3x3) Part Status: Active Number of I/O: 16 DigiKey Programmable: Not Verified |
auf Bestellung 168 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX1N965DUR-1/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO204AH Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 11 V Qualification: MIL-PRF-19500/117 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
JAN1N965DUR-1/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO213AA Qualification: MIL-PRF-19500/117 Current - Reverse Leakage @ Vr: 500 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-213AA Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA Tolerance: ±1% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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|
JANTXV1N965D-1/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO204AH Qualification: MIL-PRF-19500/117 Current - Reverse Leakage @ Vr: 500 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±1% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 143 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV1N965DUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Qualification: MIL-PRF-19500/117 Current - Reverse Leakage @ Vr: 500 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-213AA Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA Tolerance: ±1% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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|
JAN1N965D-1/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO204AH Qualification: MIL-PRF-19500/117 Current - Reverse Leakage @ Vr: 500 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±1% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 125 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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|
JANTX1N965D-1/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO204AH Qualification: MIL-PRF-19500/117 Current - Reverse Leakage @ Vr: 500 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±1% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 108 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANHCA1N965D | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
APT6010LFLLG | Microchip Technology |
Description: MOSFET N-CH 600V 54A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
APT6010B2FLLG | Microchip Technology |
Description: MOSFET N-CH 600V 54A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
JANTXV1N6114 | Microchip Technology |
Description: TVS DIODE 16.7VWM 32.03VC AXIAL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTXV1N6113 | Microchip Technology |
Description: TVS DIODE 15.2VWM 29.09VC AXIAL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTXV1N6115 | Microchip Technology |
Description: TVS DIODE 18.2VWM 34.97VC AXIAL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
JANTXV1N6113US | Microchip Technology |
Description: TVS DIODE 15.2VWM 29.09V SQ-MELF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANSM2N5151U3 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSL2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSR2N5151U3 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANKCCL2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSR2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSD2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSL2N5151U3 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSP2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSF2N5151U3 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANS2N5151U3 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANKCCP2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSD2N5151U3 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
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| JANKCCD2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| JANSP2N5151U3 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
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| 2N5151U3 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Produkt ist nicht verfügbar
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| JANSM2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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| JANKCCM2N5151 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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| 2N5322E3 |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 10 W
Voltage - Collector Emitter Breakdown (Max): 75 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-5AA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: POWER BJT
Power - Max: 10 W
Voltage - Collector Emitter Breakdown (Max): 75 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-5AA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| AVR16DD14-I/SL |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 3983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 25+ | 1.34 EUR |
| 100+ | 1.2 EUR |
| ATWINC3400-MR210UA142 |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Operating Temperature: -40°C ~ 85°C
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Tray
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
Utilized IC / Part: ATWINC3400
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 23.68mA ~ 275mA
Current - Receiving: 23.68mA ~ 63.9mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 72.2Mbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Operating Temperature: -40°C ~ 85°C
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Tray
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
Utilized IC / Part: ATWINC3400
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 23.68mA ~ 275mA
Current - Receiving: 23.68mA ~ 63.9mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 72.2Mbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
DigiKey Programmable: Not Verified
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.64 EUR |
| 25+ | 24.1 EUR |
| 100+ | 22.82 EUR |
| ATWINC3400-MR210UA142-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
Utilized IC / Part: ATWINC3400
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 23.68mA ~ 275mA
Current - Receiving: 23.68mA ~ 63.9mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 72.2Mbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Tape & Reel (TR)
Description: RF TXRX MOD BT WIFIU.FL SMD
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
Utilized IC / Part: ATWINC3400
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 23.68mA ~ 275mA
Current - Receiving: 23.68mA ~ 63.9mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 72.2Mbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Tape & Reel (TR)
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 29.65 EUR |
| ATWINC3400-MR210UA142-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
Utilized IC / Part: ATWINC3400
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 23.68mA ~ 275mA
Current - Receiving: 23.68mA ~ 63.9mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 72.2Mbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Description: RF TXRX MOD BT WIFIU.FL SMD
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 36-SMD Module
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
Utilized IC / Part: ATWINC3400
Antenna Type: Antenna Not Included, U.FL
Current - Transmitting: 23.68mA ~ 275mA
Current - Receiving: 23.68mA ~ 63.9mA
Protocol: 802.11b/g/n, Bluetooth v5.0
Data Rate: 72.2Mbps
Power - Output: 18.3dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| ATWINC3400-MR210CA123 |
Hersteller: Microchip Technology
Description: RX TXRX MODULE WIFI
Description: RX TXRX MODULE WIFI
Produkt ist nicht verfügbar
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| ATWINC3400-MR210UA123 |
Hersteller: Microchip Technology
Description: RX TXRX MODULE WIFI
Description: RX TXRX MODULE WIFI
Produkt ist nicht verfügbar
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| MXPLAD30KP43Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
Description: TVS DIODE 43VWM 69.4VC PLAD
Produkt ist nicht verfügbar
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| MXPLAD30KP51Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC PLAD
Description: TVS DIODE 51VWM 82.4VC PLAD
Produkt ist nicht verfügbar
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| MXPLAD30KP22CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 36.4VC PLAD
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30000W (30kW)
Voltage - Clamping (Max) @ Ipp: 36.4V
Voltage - Breakdown (Min): 24.4V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 822A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Description: TVS DIODE 22VWM 36.4VC PLAD
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30000W (30kW)
Voltage - Clamping (Max) @ Ipp: 36.4V
Voltage - Breakdown (Min): 24.4V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 822A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 24CS512T-E/MS66KVAO |
|
Hersteller: Microchip Technology
Description: 512K I2C SERIAL EEPROM, EXT, 8-M
Description: 512K I2C SERIAL EEPROM, EXT, 8-M
Produkt ist nicht verfügbar
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| HV20220TQ-G |
|
Hersteller: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HV20220TQ-G-M931 |
|
Hersteller: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Supplier Device Package: 48-TQFP (7x7)
-3db Bandwidth: 50MHz
On-State Resistance (Max): 38Ohm
Applications: Ultrasound
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Tape & Reel (TR)
Number of Channels: 8
Part Status: Active
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Supplier Device Package: 48-TQFP (7x7)
-3db Bandwidth: 50MHz
On-State Resistance (Max): 38Ohm
Applications: Ultrasound
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Tape & Reel (TR)
Number of Channels: 8
Part Status: Active
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Produkt ist nicht verfügbar
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| HV20220TQ-G-M931 |
|
Hersteller: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
-3db Bandwidth: 50MHz
On-State Resistance (Max): 38Ohm
Applications: Ultrasound
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Cut Tape (CT)
Number of Channels: 8
Part Status: Active
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Supplier Device Package: 48-TQFP (7x7)
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
-3db Bandwidth: 50MHz
On-State Resistance (Max): 38Ohm
Applications: Ultrasound
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Cut Tape (CT)
Number of Channels: 8
Part Status: Active
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Supplier Device Package: 48-TQFP (7x7)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT27C010L-70TC |
|
Hersteller: Microchip Technology
Description: IC EPROM 1MBIT PARALLEL 32TSOP
Description: IC EPROM 1MBIT PARALLEL 32TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Jan2N3485A |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Grade: Military
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/392
Description: TRANS PNP 60V 0.6A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Grade: Military
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/392
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| Jan2N3498 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar
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| Jantxv2N3485A |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/392
Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/392
Produkt ist nicht verfügbar
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| 2N3486 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANS PNP 60V 0.6A TO-46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
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| Jantxv2N3498 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar
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| 2N3485A |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 60V 0.6A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| MSMBJ5349B |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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| MSMBG5349B |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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| MSMBG5349B/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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| MSMBG5349BE3 |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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| MSMBJ5349BE3 |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| JAN1N4981CUS |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 91V 5W D5B
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±2%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 69.2 V
Description: DIODE ZENER 91V 5W D5B
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±2%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 69.2 V
Produkt ist nicht verfügbar
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| MAP4KE68CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 58.1VWM 92VC DO204AL
Description: TVS DIODE 58.1VWM 92VC DO204AL
Produkt ist nicht verfügbar
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| APTMC120TAM34CT3AG |
|
Hersteller: Microchip Technology
Description: POWER MODULE - SIC MOSFET
Description: POWER MODULE - SIC MOSFET
Produkt ist nicht verfügbar
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| AVR16DD20-I/REB |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 20VQFN
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 13x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-VQFN (3x3)
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 20VQFN
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 13x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-VQFN (3x3)
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 25+ | 1.45 EUR |
| 100+ | 1.31 EUR |
| JANTX1N965DUR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
Produkt ist nicht verfügbar
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| JAN1N965DUR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 15V 500MW DO213AA
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| JANTXV1N965D-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| JANTXV1N965DUR-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Description: VOLTAGE REGULATOR
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| JAN1N965D-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| JANTX1N965D-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| JANHCA1N965D |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Im Einkaufswagen
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| APT6010LFLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 54A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Description: MOSFET N-CH 600V 54A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
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| APT6010B2FLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 54A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Description: MOSFET N-CH 600V 54A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
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| JANTXV1N6114 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 16.7VWM 32.03VC AXIAL
Description: TVS DIODE 16.7VWM 32.03VC AXIAL
Produkt ist nicht verfügbar
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| JANTXV1N6113 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 15.2VWM 29.09VC AXIAL
Description: TVS DIODE 15.2VWM 29.09VC AXIAL
Produkt ist nicht verfügbar
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| JANTXV1N6115 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 18.2VWM 34.97VC AXIAL
Description: TVS DIODE 18.2VWM 34.97VC AXIAL
Produkt ist nicht verfügbar
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| JANTXV1N6113US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 15.2VWM 29.09V SQ-MELF
Description: TVS DIODE 15.2VWM 29.09V SQ-MELF
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