Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (353999) > Seite 1587 nach 5900
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PIC32MK0512GPE064T-E/MR | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 26x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, WDT Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Obsolete Number of I/O: 48 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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PIC32MK0512GPE064T-E/MR | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN Packaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 26x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, WDT Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Obsolete Number of I/O: 48 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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PIC32MK0512GPD100T-E/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 100-TQFP (12x12) Part Status: Obsolete Number of I/O: 77 |
Produkt ist nicht verfügbar |
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PIC32MK0512GPD100T-E/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 100TQFP Packaging: Cut Tape (CT) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 100-TQFP (12x12) Part Status: Obsolete Number of I/O: 77 |
Produkt ist nicht verfügbar |
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PIC32MK0512GPK100T-I/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b; D/A 3x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TQFP (12x12) Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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PIC32MK0512GPK064T-E/MR | Microchip Technology | Description: IC MCU 32BIT 512KB FLASH 64QFN |
Produkt ist nicht verfügbar |
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GC1608-85 | Microchip Technology |
Description: SI TVAR HERMETIC PILL Packaging: Tray Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz Q @ Vr, F: 1900 @ 4V, 50MHz Capacitance Ratio Condition: C0/C45 Voltage - Peak Reverse (Max): 45 V Capacitance Ratio: 5.4 |
Produkt ist nicht verfügbar |
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GC1602-85 | Microchip Technology |
Description: SI TVAR HERMETIC PILL Packaging: Tray Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz Q @ Vr, F: 2800 @ 4V, 50MHz Capacitance Ratio Condition: C0/C45 Voltage - Peak Reverse (Max): 45 V Capacitance Ratio: 4.5 |
Produkt ist nicht verfügbar |
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B10443 | Microchip Technology |
Description: OPTOLYZER STUDIO ENTRY FROM K2L Packaging: Bulk For Use With/Related Products: APGDT001, APGDT002 Type: Network Analyzer Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5952D | Microchip Technology | Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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1N5952B | Microchip Technology | Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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1N5952C | Microchip Technology | Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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DSC613PE2A-017Q | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
Produkt ist nicht verfügbar |
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DSC613RE1A-017Q | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
Produkt ist nicht verfügbar |
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DSC613PE2A-017QT | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
Produkt ist nicht verfügbar |
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DSC613RE1A-017QT | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
Produkt ist nicht verfügbar |
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DSC613PE1A-017QT | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
Produkt ist nicht verfügbar |
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DSC613PE1A-017Q | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
Produkt ist nicht verfügbar |
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JANTXV1N1188 | Microchip Technology |
Description: DIODE GEN PURP 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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JAN1N1188R | Microchip Technology |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N1188R | Microchip Technology |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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1N1188 | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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JANTX1N1188 | Microchip Technology |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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1N5806E3 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2104N3-G-P003 | Microchip Technology |
Description: MOSFET P-CH 40V 175MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2104N3-G-P003 | Microchip Technology |
Description: MOSFET P-CH 40V 175MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2452 Stücke: Lieferzeit 10-14 Tag (e) |
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HT-MM900AC-6K-EE-30M0000000 | Microchip Technology | Description: HT-MM900AC-6K-EE-30M0000000 |
Produkt ist nicht verfügbar |
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HT-MM900AC-2K-EE-30M0000000 | Microchip Technology |
Description: HIGH TEMP MEMS BASED XO +3.3 VDC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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HT-MM900AC-6E-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
Produkt ist nicht verfügbar |
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MO-9000AE-7F-EE-30M0000000 | Microchip Technology | Description: MEMS BASED XO +3.3 VDC -40C TO + |
Produkt ist nicht verfügbar |
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HT-MM900AF-7K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
Produkt ist nicht verfügbar |
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HT-MM900AC-4K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
Produkt ist nicht verfügbar |
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HT-MM900AE-7F-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
Produkt ist nicht verfügbar |
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HT-MM900A7-2K-EE-30M0000000 | Microchip Technology |
Description: HIGH TEMP MEMS BASED XO +3.3 VDC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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VV-701-EAE-PNEE-30M0000000 | Microchip Technology | Description: LOW FREQUENCY CERAMIC VCXO +3.3 |
Produkt ist nicht verfügbar |
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HT-MM900AE-4K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
Produkt ist nicht verfügbar |
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DSC6001CE1A-027.1780 | Microchip Technology | Description: MEMS OSC XO 27.1780MHZ CMOS SMD |
Produkt ist nicht verfügbar |
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DSC6111CE1A-027.2250T | Microchip Technology | Description: MEMS OSC XO 27.2250MHZ CMOS SMD |
Produkt ist nicht verfügbar |
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DSC6101JI1A-027.0000 | Microchip Technology |
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM Packaging: Tube Package / Case: 4-VLGA Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Frequency: 27 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
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DSC6101JI1A-027.0000T | Microchip Technology | Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM |
Produkt ist nicht verfügbar |
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DSC6111CE1A-027.2250 | Microchip Technology | Description: MEMS OSC XO 27.2250MHZ CMOS SMD |
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DSC6001CE1A-027.1780T | Microchip Technology | Description: MEMS OSC XO 27.1780MHZ CMOS SMD |
Produkt ist nicht verfügbar |
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1N458 | Microchip Technology |
Description: DIODE GEN PURP 150V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
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1N4589R | Microchip Technology |
Description: DIODE GP REV 300V 150A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 50 µA @ 300 V |
Produkt ist nicht verfügbar |
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1N458/TR | Microchip Technology |
Description: DIODE GP REV 150V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
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1N4588RD | Microchip Technology |
Description: DIODE GP REV 200V 150A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
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1N4588D | Microchip Technology |
Description: DIODE GEN PURP 200V 150A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
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JANTXV1N4580AUR-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
Produkt ist nicht verfügbar |
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JAN1N4583AUR-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
Produkt ist nicht verfügbar |
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JANS1N4583A-1 | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
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JANS1N4581A-1 | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TA) Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
Produkt ist nicht verfügbar |
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JANTX1N4583AUR-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
Produkt ist nicht verfügbar |
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JANS1N4582AUR-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
Produkt ist nicht verfügbar |
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JAN1N4581AUR-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
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JAN1N4582AUR-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
Produkt ist nicht verfügbar |
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LDTS24A | Microchip Technology |
Description: TVS UNIDIRECTIONAL TO-3 3KW Packaging: Tube Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 77A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: TO-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.5V Voltage - Clamping (Max) @ Ipp: 39V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDB03Ce3/TR7 | Microchip Technology |
Description: TVS DIODE 3.3VWM 9VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 300pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SO Bidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMDB03Ce3/TR7 | Microchip Technology |
Description: TVS DIODE 3.3VWM 9VC 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 300pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SO Bidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 300W Power Line Protection: No |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDA03-6E3/TR7 | Microchip Technology |
Description: TVS DIODE 3.3VWM 9VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 800pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SO Unidirectional Channels: 6 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 300W Power Line Protection: No |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDA03-6E3/TR7 | Microchip Technology |
Description: TVS DIODE 3.3VWM 9VC 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 800pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SO Unidirectional Channels: 6 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 300W Power Line Protection: No |
auf Bestellung 1396 Stücke: Lieferzeit 10-14 Tag (e) |
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PIC32MK0512GPE064T-E/MR |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
PIC32MK0512GPE064T-E/MR |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
PIC32MK0512GPD100T-E/PT |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
Produkt ist nicht verfügbar
PIC32MK0512GPD100T-E/PT |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
Produkt ist nicht verfügbar
PIC32MK0512GPK100T-I/PT |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PIC32MK0512GPK064T-E/MR |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Description: IC MCU 32BIT 512KB FLASH 64QFN
Produkt ist nicht verfügbar
GC1608-85 |
Hersteller: Microchip Technology
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz
Q @ Vr, F: 1900 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 5.4
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz
Q @ Vr, F: 1900 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 5.4
Produkt ist nicht verfügbar
GC1602-85 |
Hersteller: Microchip Technology
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz
Q @ Vr, F: 2800 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 4.5
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz
Q @ Vr, F: 2800 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 4.5
Produkt ist nicht verfügbar
B10443 |
Hersteller: Microchip Technology
Description: OPTOLYZER STUDIO ENTRY FROM K2L
Packaging: Bulk
For Use With/Related Products: APGDT001, APGDT002
Type: Network Analyzer
Part Status: Active
Description: OPTOLYZER STUDIO ENTRY FROM K2L
Packaging: Bulk
For Use With/Related Products: APGDT001, APGDT002
Type: Network Analyzer
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 713.98 EUR |
DSC613PE2A-017Q |
Hersteller: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Produkt ist nicht verfügbar
DSC613RE1A-017Q |
Hersteller: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Produkt ist nicht verfügbar
DSC613PE2A-017QT |
Hersteller: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Produkt ist nicht verfügbar
DSC613RE1A-017QT |
Hersteller: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Produkt ist nicht verfügbar
DSC613PE1A-017QT |
Hersteller: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Produkt ist nicht verfügbar
DSC613PE1A-017Q |
Hersteller: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Produkt ist nicht verfügbar
JANTXV1N1188 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
JAN1N1188R |
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
JANTXV1N1188R |
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
1N1188 |
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
JANTX1N1188 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
1N5806E3 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.36 EUR |
100+ | 8.7 EUR |
TP2104N3-G-P003 |
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)TP2104N3-G-P003 |
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 2452 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
25+ | 1.19 EUR |
100+ | 1.08 EUR |
HT-MM900AC-6K-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HT-MM900AC-6K-EE-30M0000000
Description: HT-MM900AC-6K-EE-30M0000000
Produkt ist nicht verfügbar
HT-MM900AC-2K-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
HT-MM900AC-6E-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Produkt ist nicht verfügbar
MO-9000AE-7F-EE-30M0000000 |
Hersteller: Microchip Technology
Description: MEMS BASED XO +3.3 VDC -40C TO +
Description: MEMS BASED XO +3.3 VDC -40C TO +
Produkt ist nicht verfügbar
HT-MM900AF-7K-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Produkt ist nicht verfügbar
HT-MM900AC-4K-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Produkt ist nicht verfügbar
HT-MM900AE-7F-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Produkt ist nicht verfügbar
HT-MM900A7-2K-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
VV-701-EAE-PNEE-30M0000000 |
Hersteller: Microchip Technology
Description: LOW FREQUENCY CERAMIC VCXO +3.3
Description: LOW FREQUENCY CERAMIC VCXO +3.3
Produkt ist nicht verfügbar
HT-MM900AE-4K-EE-30M0000000 |
Hersteller: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Produkt ist nicht verfügbar
DSC6001CE1A-027.1780 |
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
Produkt ist nicht verfügbar
DSC6111CE1A-027.2250T |
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
Produkt ist nicht verfügbar
DSC6101JI1A-027.0000 |
Hersteller: Microchip Technology
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Packaging: Tube
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 27 MHz
Base Resonator: MEMS
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Packaging: Tube
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 27 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
DSC6101JI1A-027.0000T |
Hersteller: Microchip Technology
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Produkt ist nicht verfügbar
DSC6111CE1A-027.2250 |
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
Produkt ist nicht verfügbar
DSC6001CE1A-027.1780T |
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
Produkt ist nicht verfügbar
1N458 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
1N4589R |
Hersteller: Microchip Technology
Description: DIODE GP REV 300V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Description: DIODE GP REV 300V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Produkt ist nicht verfügbar
1N458/TR |
Hersteller: Microchip Technology
Description: DIODE GP REV 150V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GP REV 150V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
1N4588RD |
Hersteller: Microchip Technology
Description: DIODE GP REV 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GP REV 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
1N4588D |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GEN PURP 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
JANTXV1N4580AUR-1/TR |
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Produkt ist nicht verfügbar
JAN1N4583AUR-1/TR |
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
Produkt ist nicht verfügbar
JANS1N4581A-1 |
Hersteller: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Produkt ist nicht verfügbar
JANTX1N4583AUR-1/TR |
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
Produkt ist nicht verfügbar
JANS1N4582AUR-1/TR |
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
Produkt ist nicht verfügbar
JAN1N4581AUR-1/TR |
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
Produkt ist nicht verfügbar
JAN1N4582AUR-1/TR |
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
Produkt ist nicht verfügbar
LDTS24A |
Hersteller: Microchip Technology
Description: TVS UNIDIRECTIONAL TO-3 3KW
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: TO-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 39V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS UNIDIRECTIONAL TO-3 3KW
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: TO-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 39V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 72.39 EUR |
100+ | 67.22 EUR |
SMDB03Ce3/TR7 |
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDB03Ce3/TR7 |
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.5 EUR |
100+ | 3.26 EUR |
SMDA03-6E3/TR7 |
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 1.83 EUR |
SMDA03-6E3/TR7 |
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 1396 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.95 EUR |
100+ | 1.83 EUR |