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AT24MAC602-XHM-T AT24MAC602-XHM-T Microchip Technology AT24MAC402-XHM.pdf Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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AT24MAC602-XHM-T AT24MAC602-XHM-T Microchip Technology AT24MAC402-XHM.pdf Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3429 Stücke:
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ASBK-014 ASBK-014 Microchip Technology ASBK-014.pdf Description: DEVICE PROGRAMMING KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s), Cable(s)
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ATSAM4CMP32CB-AUT ATSAM4CMP32CB-AUT Microchip Technology SAM4CM_DS60001719B.pdf Description: TQFP, GREEN, IND, CRYPTO, MRLB,
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ATSAM4CMP32CB-AUTR ATSAM4CMP32CB-AUTR Microchip Technology SAM4CM_DS60001719B.pdf Description: TQFP, GREEN, IND, CRYPTO, MRLB,
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JAN1N4249 JAN1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N4249 1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JAN1N4249/TR JAN1N4249/TR Microchip Technology Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N4249US Microchip Technology Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JANTXV1N4249/TR JANTXV1N4249/TR Microchip Technology Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N4249/TR 1N4249/TR Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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EMC1412-1-ACZL-TR EMC1412-1-ACZL-TR Microchip Technology 20005273A.pdf Description: SENSOR DIGITAL -40C-125C 8TSSOP
Packaging: Cut Tape (CT)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
auf Bestellung 9104 Stücke:
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14+1.32 EUR
25+1.31 EUR
Mindestbestellmenge: 14
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1N4500E3/TR 1N4500E3/TR Microchip Technology 1N4500.pdf Description: DIODE GP REV 80V 300MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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1N4531UR-1 1N4531UR-1 Microchip Technology Description: DIODE GEN PURP 75V 125MA DO213AA
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1N4500E3 1N4500E3 Microchip Technology 1N4500.pdf Description: DIODE GEN PURP 80V 300MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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1N4529R Microchip Technology S,R304.pdf Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1N4596R Microchip Technology Description: DIODE GP REV 1.4KV 150A DO205AA
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1N4593R Microchip Technology Description: DIODE GP REV 800V 150A DO205AA
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1N4590 Microchip Technology Description: DIODE GEN PURP 400V 150A DO205AA
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1N4593 Microchip Technology Description: DIODE GEN PURP 800V 150A DO205AA
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1N4591 Microchip Technology Description: DIODE GEN PURP 500V 150A DO205AA
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1N459/TR 1N459/TR Microchip Technology 1N457A-1N459A.pdf Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N4595R Microchip Technology Description: DIODE GP REV 1.2KV 150A DO205AA
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1N4592R Microchip Technology Description: DIODE GP REV 600V 150A DO205AA
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1N4592TS Microchip Technology Description: DIODE GEN PURP 600V 150A DO205AA
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1N4591R Microchip Technology Description: DIODE GP REV 500V 150A DO205AA
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1N4596 Microchip Technology Description: DIODE GP 1.4KV 150A DO205AA
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1N4590R Microchip Technology Description: DIODE GP REV 400V 150A DO205AA
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1N4595 Microchip Technology Description: DIODE GP 1.2KV 150A DO205AA
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1N459AUR Microchip Technology 1N457A-1N459A.pdf Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N459A/TR 1N459A/TR Microchip Technology 1N457A-1N459A.pdf Description: DIODE STD REV 200V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N4592 Microchip Technology Description: DIODE GEN PURP 600V 150A DO205AA
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2N2608 2N2608 Microchip Technology 6029-2n2608-datasheet Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
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MQ2N2608UB MQ2N2608UB Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
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MQ2N2608UB/TR MQ2N2608UB/TR Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
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2N2608UB/TR 2N2608UB/TR Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
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2N2608UB 2N2608UB Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
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JANTX1N6164A Microchip Technology 1N6138_1N6173A.pdf Description: TVS DIODE 62.2VWM 112.8V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6165A Microchip Technology 1N6138_1N6173A.pdf Description: TVS DIODE 69.2VWM 125.1V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 69.2V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JANSR2N2906AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
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T0780-6CP T0780-6CP Microchip Technology T0780 Preliminary.pdf Description: IC RCVR MIX 800-1000MHZ 16SSO
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz ~ 1GHz
Voltage - Supply: 4.75V ~ 5.25V
Gain: 10dB
Current - Supply: 180mA
Noise Figure: 19dB
Number of Mixers: 1
Supplier Device Package: 16-SSOP
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JANTXV1N6050A JANTXV1N6050A Microchip Technology 8923-lds-0097-pdf.pdf Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6050A/TR JANTX1N6050A/TR Microchip Technology 8923-lds-0097-pdf.pdf Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6050A/TR JAN1N6050A/TR Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6050A/TR JANTXV1N6050A/TR Microchip Technology 8923-lds-0097-pdf.pdf Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6050A JAN1N6050A Microchip Technology 8923-lds-0097-pdf.pdf Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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VCC1-1580-50M0000000 VCC1-1580-50M0000000 Microchip Technology VCC1-April-2020.pdf Description: VCC1-1580-50M0000000
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Voltage - Supply: 1.8V ~ 5V
Current - Supply (Max): 30mA
Height - Seated (Max): 0.075" (1.90mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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MSMCGLCE64A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 64VWM 103VC SMCG
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2N6030 2N6030 Microchip Technology Description: TRANS PNP 120V 16A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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1N6030B/TR 1N6030B/TR Microchip Technology 1N5985B-1_1N6031B-1.pdf Description: DIODE ZENER 180V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
Produkt ist nicht verfügbar
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1N6030UR-1 Microchip Technology Description: DIODE ZENER
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1N6030UR Microchip Technology Description: DIODE ZENER
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USB7016T-I/KDX USB7016T-I/KDX Microchip Technology USB7016-Data-Sheet-DS00003740B.pdf Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+14.36 EUR
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USB7016T/KDX USB7016T/KDX Microchip Technology USB7016-Data-Sheet-DS00003740B.pdf Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PM4390-FEI PM4390-FEI Microchip Technology download_p.pl?res_id=11420&filename=2040574_008558.pdf Description: IC TELECOM INTERFACE
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PM4390B-FGI Microchip Technology Description: IC TELECOM INTERFACE 8 CHAN
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JANTX1N5651A/TR JANTX1N5651A/TR Microchip Technology lds-0096.pdf Description: UNI-DIRECTIONAL TVS
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JANTXV1N5651A/TR JANTXV1N5651A/TR Microchip Technology Description: TVS DIODE 47.8VWM 77VC DO13
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JANTX1N5651A JANTX1N5651A Microchip Technology 8922-lds-0096-datasheet Description: TVS DIODE 47.8VWM 77VC DO13
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JAN1N5651A JAN1N5651A Microchip Technology 8922-lds-0096-datasheet Description: TVS DIODE 47.8VWM 77VC DO13
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AT24MAC602-XHM-T AT24MAC402-XHM.pdf
AT24MAC602-XHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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AT24MAC602-XHM-T AT24MAC402-XHM.pdf
AT24MAC602-XHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3429 Stücke:
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31+0.58 EUR
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ASBK-014 ASBK-014.pdf
ASBK-014
Hersteller: Microchip Technology
Description: DEVICE PROGRAMMING KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s), Cable(s)
auf Bestellung 48 Stücke:
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Anzahl Preis
1+351.21 EUR
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ATSAM4CMP32CB-AUT SAM4CM_DS60001719B.pdf
ATSAM4CMP32CB-AUT
Hersteller: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
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ATSAM4CMP32CB-AUTR SAM4CM_DS60001719B.pdf
ATSAM4CMP32CB-AUTR
Hersteller: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
Produkt ist nicht verfügbar
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JAN1N4249 123513-lds-0191-datasheet
JAN1N4249
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N4249 123513-lds-0191-datasheet
1N4249
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JAN1N4249/TR
JAN1N4249/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N4249US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JANTXV1N4249/TR
JANTXV1N4249/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N4249/TR 123513-lds-0191-datasheet
1N4249/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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EMC1412-1-ACZL-TR 20005273A.pdf
EMC1412-1-ACZL-TR
Hersteller: Microchip Technology
Description: SENSOR DIGITAL -40C-125C 8TSSOP
Packaging: Cut Tape (CT)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
auf Bestellung 9104 Stücke:
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Anzahl Preis
14+1.32 EUR
25+1.31 EUR
Mindestbestellmenge: 14
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1N4500E3/TR 1N4500.pdf
1N4500E3/TR
Hersteller: Microchip Technology
Description: DIODE GP REV 80V 300MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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1N4531UR-1
1N4531UR-1
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 125MA DO213AA
Produkt ist nicht verfügbar
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1N4500E3 1N4500.pdf
1N4500E3
Hersteller: Microchip Technology
Description: DIODE GEN PURP 80V 300MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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1N4529R S,R304.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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1N4596R
Hersteller: Microchip Technology
Description: DIODE GP REV 1.4KV 150A DO205AA
Produkt ist nicht verfügbar
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1N4593R
Hersteller: Microchip Technology
Description: DIODE GP REV 800V 150A DO205AA
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1N4590
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 150A DO205AA
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1N4593
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 150A DO205AA
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1N4591
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 150A DO205AA
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1N459/TR 1N457A-1N459A.pdf
1N459/TR
Hersteller: Microchip Technology
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N4595R
Hersteller: Microchip Technology
Description: DIODE GP REV 1.2KV 150A DO205AA
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1N4592R
Hersteller: Microchip Technology
Description: DIODE GP REV 600V 150A DO205AA
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1N4592TS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 150A DO205AA
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1N4591R
Hersteller: Microchip Technology
Description: DIODE GP REV 500V 150A DO205AA
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1N4596
Hersteller: Microchip Technology
Description: DIODE GP 1.4KV 150A DO205AA
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1N4590R
Hersteller: Microchip Technology
Description: DIODE GP REV 400V 150A DO205AA
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1N4595
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 150A DO205AA
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1N459AUR 1N457A-1N459A.pdf
Hersteller: Microchip Technology
Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N459A/TR 1N457A-1N459A.pdf
1N459A/TR
Hersteller: Microchip Technology
Description: DIODE STD REV 200V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N4592
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar
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2N2608 6029-2n2608-datasheet
2N2608
Hersteller: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
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MQ2N2608UB LDS-0004.pdf
MQ2N2608UB
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
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MQ2N2608UB/TR LDS-0004.pdf
MQ2N2608UB/TR
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
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2N2608UB/TR LDS-0004.pdf
2N2608UB/TR
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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2N2608UB LDS-0004.pdf
2N2608UB
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
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JANTX1N6164A 1N6138_1N6173A.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 62.2VWM 112.8V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6165A 1N6138_1N6173A.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 69.2VWM 125.1V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 69.2V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JANSR2N2906AUBC
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
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T0780-6CP T0780 Preliminary.pdf
T0780-6CP
Hersteller: Microchip Technology
Description: IC RCVR MIX 800-1000MHZ 16SSO
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz ~ 1GHz
Voltage - Supply: 4.75V ~ 5.25V
Gain: 10dB
Current - Supply: 180mA
Noise Figure: 19dB
Number of Mixers: 1
Supplier Device Package: 16-SSOP
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JANTXV1N6050A 8923-lds-0097-pdf.pdf
JANTXV1N6050A
Hersteller: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6050A/TR 8923-lds-0097-pdf.pdf
JANTX1N6050A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6050A/TR 1N6036A-1N6072A.pdf
JAN1N6050A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6050A/TR 8923-lds-0097-pdf.pdf
JANTXV1N6050A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
Produkt ist nicht verfügbar
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JAN1N6050A 8923-lds-0097-pdf.pdf
JAN1N6050A
Hersteller: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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VCC1-1580-50M0000000 VCC1-April-2020.pdf
VCC1-1580-50M0000000
Hersteller: Microchip Technology
Description: VCC1-1580-50M0000000
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Voltage - Supply: 1.8V ~ 5V
Current - Supply (Max): 30mA
Height - Seated (Max): 0.075" (1.90mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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MSMCGLCE64A 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 64VWM 103VC SMCG
Produkt ist nicht verfügbar
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2N6030
2N6030
Hersteller: Microchip Technology
Description: TRANS PNP 120V 16A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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1N6030B/TR 1N5985B-1_1N6031B-1.pdf
1N6030B/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N6030UR-1
Hersteller: Microchip Technology
Description: DIODE ZENER
Produkt ist nicht verfügbar
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1N6030UR
Hersteller: Microchip Technology
Description: DIODE ZENER
Produkt ist nicht verfügbar
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USB7016T-I/KDX USB7016-Data-Sheet-DS00003740B.pdf
USB7016T-I/KDX
Hersteller: Microchip Technology
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+14.36 EUR
Mindestbestellmenge: 2500
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USB7016T/KDX USB7016-Data-Sheet-DS00003740B.pdf
USB7016T/KDX
Hersteller: Microchip Technology
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PM4390-FEI download_p.pl?res_id=11420&filename=2040574_008558.pdf
PM4390-FEI
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE
Produkt ist nicht verfügbar
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PM4390B-FGI
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 8 CHAN
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JANTX1N5651A/TR lds-0096.pdf
JANTX1N5651A/TR
Hersteller: Microchip Technology
Description: UNI-DIRECTIONAL TVS
Produkt ist nicht verfügbar
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JANTXV1N5651A/TR
JANTXV1N5651A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 47.8VWM 77VC DO13
Produkt ist nicht verfügbar
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JANTX1N5651A 8922-lds-0096-datasheet
JANTX1N5651A
Hersteller: Microchip Technology
Description: TVS DIODE 47.8VWM 77VC DO13
Produkt ist nicht verfügbar
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JAN1N5651A 8922-lds-0096-datasheet
JAN1N5651A
Hersteller: Microchip Technology
Description: TVS DIODE 47.8VWM 77VC DO13
Produkt ist nicht verfügbar
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