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JANTXV1N4989DUS Microchip Technology Description: VOLTAGE REGULATOR
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JANS1N4989US JANS1N4989US Microchip Technology SG-SEMTECH-HI-REL-SPACE_2020_web.pdf Description: ZENER DIODE
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1N4989CUS Microchip Technology Description: VOLTAGE REGULATOR
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1N5804URS 1N5804URS Microchip Technology 132687-lds-0211-1.pdf Description: DIODE STANDARD 110V 1A A SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 110 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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MXPLAD30KP22CA Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP33CAe3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP43CAe3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 43VWM 69.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 432A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP24Ae3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 24VWM 39.8VC PLAD
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MXPLAD30KP180CAe3 MXPLAD30KP180CAe3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 180VWM 291VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD30KP33CA Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP200A Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP36A Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 36VWM 58.1VC PLAD
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MXPLAD30KP54CA Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 54VWM 87.1VC PLAD
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MXPLAD30KP54Ae3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 54VWM 87.1VC PLAD
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CDLL6344/TR CDLL6344/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 155 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52 V
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DSC1102BI2-155.2500 Microchip Technology MCHP-S-A0002247313-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 155.2500MHZ LVPECL
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DSC1102BI2-155.2500T Microchip Technology MCHP-S-A0002247313-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 155.2500MHZ LVPECL
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M15KP51AE3/TR M15KP51AE3/TR Microchip Technology M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf Description: TVS DIODE 51VWM 82.8VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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M15KP51A/TR M15KP51A/TR Microchip Technology M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf Description: TVS DIODE 51VWM 82.8VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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R3205 Microchip Technology Description: STD RECTIFIER
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AT32UC3A0256-ALUT AT32UC3A0256-ALUT Microchip Technology 32058S.pdf Description: IC MCU 32BIT 256KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, SPI, SSC, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 109
DigiKey Programmable: Not Verified
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1+21.12 EUR
25+19.22 EUR
100+17.39 EUR
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ATA6020N-020-TKQW Microchip Technology Description: TRANSCEIVER
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1N4104 1N4104 Microchip Technology 1N4614-1-1N4627-1e3_1N4099-1-1N4135-1e3.pdf Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
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5+3.75 EUR
100+3.49 EUR
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AT24MAC602-XHM-T AT24MAC602-XHM-T Microchip Technology AT24MAC402-XHM.pdf Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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AT24MAC602-XHM-T AT24MAC602-XHM-T Microchip Technology AT24MAC402-XHM.pdf Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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ASBK-014 ASBK-014 Microchip Technology ASBK-014.pdf Description: DEVICE PROGRAMMING KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s), Cable(s)
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ATSAM4CMP32CB-AUT ATSAM4CMP32CB-AUT Microchip Technology SAM4CM_DS60001719B.pdf Description: TQFP, GREEN, IND, CRYPTO, MRLB,
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ATSAM4CMP32CB-AUTR ATSAM4CMP32CB-AUTR Microchip Technology SAM4CM_DS60001719B.pdf Description: TQFP, GREEN, IND, CRYPTO, MRLB,
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JAN1N4249 JAN1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N4249 1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JAN1N4249/TR JAN1N4249/TR Microchip Technology Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N4249US Microchip Technology Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JANTXV1N4249/TR JANTXV1N4249/TR Microchip Technology Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N4249/TR 1N4249/TR Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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EMC1412-1-ACZL-TR EMC1412-1-ACZL-TR Microchip Technology 20005273A.pdf Description: SENSOR DIGITAL -40C-125C 8TSSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
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25+1.31 EUR
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1N4500E3/TR 1N4500E3/TR Microchip Technology 1N4500.pdf Description: DIODE STD REV 80V 300MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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1N4531UR-1 1N4531UR-1 Microchip Technology Description: DIODE GEN PURP 75V 125MA DO213AA
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1N4500E3 1N4500E3 Microchip Technology 1N4500.pdf Description: DIODE STANDARD 80V 300MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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1N4529R Microchip Technology S,R304.pdf Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1N4596R Microchip Technology Description: DIODE GP REV 1.4KV 150A DO205AA
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1N4593R Microchip Technology Description: DIODE GP REV 800V 150A DO205AA
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1N4590 Microchip Technology Description: DIODE GEN PURP 400V 150A DO205AA
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1N4593 Microchip Technology Description: DIODE GEN PURP 800V 150A DO205AA
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1N4591 Microchip Technology Description: DIODE GEN PURP 500V 150A DO205AA
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1N459/TR 1N459/TR Microchip Technology 1N457A-1N459A.pdf Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N4595R Microchip Technology Description: DIODE GP REV 1.2KV 150A DO205AA
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1N4592R Microchip Technology Description: DIODE GP REV 600V 150A DO205AA
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1N4592TS Microchip Technology Description: DIODE GEN PURP 600V 150A DO205AA
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1N4591R Microchip Technology Description: DIODE GP REV 500V 150A DO205AA
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1N4596 Microchip Technology Description: DIODE GP 1.4KV 150A DO205AA
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1N4590R Microchip Technology Description: DIODE GP REV 400V 150A DO205AA
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1N4595 Microchip Technology Description: DIODE GP 1.2KV 150A DO205AA
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1N459AUR Microchip Technology 1N457A-1N459A.pdf Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N459A/TR 1N459A/TR Microchip Technology 1N457A-1N459A.pdf Description: DIODE STD REV 200V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N4592 Microchip Technology Description: DIODE GEN PURP 600V 150A DO205AA
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2N2608 2N2608 Microchip Technology 6029-2n2608-datasheet Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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MQ2N2608UB MQ2N2608UB Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
Produkt ist nicht verfügbar
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MQ2N2608UB/TR MQ2N2608UB/TR Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
Produkt ist nicht verfügbar
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2N2608UB/TR 2N2608UB/TR Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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2N2608UB 2N2608UB Microchip Technology LDS-0004.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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JANTXV1N4989DUS
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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JANS1N4989US SG-SEMTECH-HI-REL-SPACE_2020_web.pdf
JANS1N4989US
Hersteller: Microchip Technology
Description: ZENER DIODE
Produkt ist nicht verfügbar
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1N4989CUS
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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1N5804URS 132687-lds-0211-1.pdf
1N5804URS
Hersteller: Microchip Technology
Description: DIODE STANDARD 110V 1A A SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 110 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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MXPLAD30KP22CA 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP33CAe3 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP43CAe3 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 432A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP24Ae3 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 39.8VC PLAD
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MXPLAD30KP180CAe3 9523-mplad30kp-datasheet
MXPLAD30KP180CAe3
Hersteller: Microchip Technology
Description: TVS DIODE 180VWM 291VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD30KP33CA 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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MXPLAD30KP200A 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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MXPLAD30KP36A 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC PLAD
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MXPLAD30KP54CA 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC PLAD
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MXPLAD30KP54Ae3 9523-mplad30kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC PLAD
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CDLL6344/TR
CDLL6344/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 155 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52 V
Produkt ist nicht verfügbar
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DSC1102BI2-155.2500 MCHP-S-A0002247313-1.pdf?t.download=true&u=5oefqw
Hersteller: Microchip Technology
Description: MEMS OSC XO 155.2500MHZ LVPECL
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DSC1102BI2-155.2500T MCHP-S-A0002247313-1.pdf?t.download=true&u=5oefqw
Hersteller: Microchip Technology
Description: MEMS OSC XO 155.2500MHZ LVPECL
Produkt ist nicht verfügbar
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M15KP51AE3/TR M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf
M15KP51AE3/TR
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 82.8VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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M15KP51A/TR M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf
M15KP51A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 82.8VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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R3205
Hersteller: Microchip Technology
Description: STD RECTIFIER
Produkt ist nicht verfügbar
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AT32UC3A0256-ALUT 32058S.pdf
AT32UC3A0256-ALUT
Hersteller: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, SPI, SSC, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 109
DigiKey Programmable: Not Verified
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.12 EUR
25+19.22 EUR
100+17.39 EUR
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ATA6020N-020-TKQW
Hersteller: Microchip Technology
Description: TRANSCEIVER
Produkt ist nicht verfügbar
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1N4104 1N4614-1-1N4627-1e3_1N4099-1-1N4135-1e3.pdf
1N4104
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
100+3.49 EUR
Mindestbestellmenge: 5
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AT24MAC602-XHM-T AT24MAC402-XHM.pdf
AT24MAC602-XHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT24MAC602-XHM-T AT24MAC402-XHM.pdf
AT24MAC602-XHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
Mindestbestellmenge: 32
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ASBK-014 ASBK-014.pdf
ASBK-014
Hersteller: Microchip Technology
Description: DEVICE PROGRAMMING KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s), Cable(s)
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+351.21 EUR
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ATSAM4CMP32CB-AUT SAM4CM_DS60001719B.pdf
ATSAM4CMP32CB-AUT
Hersteller: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
Produkt ist nicht verfügbar
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ATSAM4CMP32CB-AUTR SAM4CM_DS60001719B.pdf
ATSAM4CMP32CB-AUTR
Hersteller: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
Produkt ist nicht verfügbar
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JAN1N4249 123513-lds-0191-datasheet
JAN1N4249
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N4249 123513-lds-0191-datasheet
1N4249
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JAN1N4249/TR
JAN1N4249/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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1N4249US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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JANTXV1N4249/TR
JANTXV1N4249/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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1N4249/TR 123513-lds-0191-datasheet
1N4249/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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EMC1412-1-ACZL-TR 20005273A.pdf
EMC1412-1-ACZL-TR
Hersteller: Microchip Technology
Description: SENSOR DIGITAL -40C-125C 8TSSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
auf Bestellung 9104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
25+1.31 EUR
Mindestbestellmenge: 14
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1N4500E3/TR 1N4500.pdf
1N4500E3/TR
Hersteller: Microchip Technology
Description: DIODE STD REV 80V 300MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
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1N4531UR-1
1N4531UR-1
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 125MA DO213AA
Produkt ist nicht verfügbar
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1N4500E3 1N4500.pdf
1N4500E3
Hersteller: Microchip Technology
Description: DIODE STANDARD 80V 300MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
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1N4529R S,R304.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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1N4596R
Hersteller: Microchip Technology
Description: DIODE GP REV 1.4KV 150A DO205AA
Produkt ist nicht verfügbar
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1N4593R
Hersteller: Microchip Technology
Description: DIODE GP REV 800V 150A DO205AA
Produkt ist nicht verfügbar
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1N4590
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 150A DO205AA
Produkt ist nicht verfügbar
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1N4593
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 150A DO205AA
Produkt ist nicht verfügbar
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1N4591
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 150A DO205AA
Produkt ist nicht verfügbar
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1N459/TR 1N457A-1N459A.pdf
1N459/TR
Hersteller: Microchip Technology
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N4595R
Hersteller: Microchip Technology
Description: DIODE GP REV 1.2KV 150A DO205AA
Produkt ist nicht verfügbar
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1N4592R
Hersteller: Microchip Technology
Description: DIODE GP REV 600V 150A DO205AA
Produkt ist nicht verfügbar
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1N4592TS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar
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1N4591R
Hersteller: Microchip Technology
Description: DIODE GP REV 500V 150A DO205AA
Produkt ist nicht verfügbar
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1N4596
Hersteller: Microchip Technology
Description: DIODE GP 1.4KV 150A DO205AA
Produkt ist nicht verfügbar
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1N4590R
Hersteller: Microchip Technology
Description: DIODE GP REV 400V 150A DO205AA
Produkt ist nicht verfügbar
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1N4595
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 150A DO205AA
Produkt ist nicht verfügbar
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1N459AUR 1N457A-1N459A.pdf
Hersteller: Microchip Technology
Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N459A/TR 1N457A-1N459A.pdf
1N459A/TR
Hersteller: Microchip Technology
Description: DIODE STD REV 200V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N4592
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar
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2N2608 6029-2n2608-datasheet
2N2608
Hersteller: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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MQ2N2608UB LDS-0004.pdf
MQ2N2608UB
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
Produkt ist nicht verfügbar
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MQ2N2608UB/TR LDS-0004.pdf
MQ2N2608UB/TR
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
Produkt ist nicht verfügbar
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2N2608UB/TR LDS-0004.pdf
2N2608UB/TR
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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2N2608UB LDS-0004.pdf
2N2608UB
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Produkt ist nicht verfügbar
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