Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276361) > Seite 648 nach 4607
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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APT30N60BC6 | Microchip Technology |
 Description: MOSFET N-CH 600V 30A TO247Package / Case: TO-247-3 Packaging: Tube Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 960µA Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT35GA90B | Microchip Technology |
Description: IGBT 900V 63A 290W TO-247 Power - Max: 290 W Current - Collector Pulsed (Icm): 105 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 63 A Part Status: Active Gate Charge: 84 nC Test Condition: 600V, 18A, 10Ohm, 15V Switching Energy: 642µJ (on), 382µJ (off) Td (on/off) @ 25°C: 12ns/104ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 110 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT36GA60B | Microchip Technology |
Description: IGBT PT 600V 65A TO247 Power - Max: 290 W Current - Collector Pulsed (Icm): 109 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A Gate Charge: 102 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 307µJ (on), 254µJ (off) Td (on/off) @ 25°C: 16ns/122ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT36GA60BD15 | Microchip Technology |
Description: IGBT 600V 65A 290W TO-247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT38N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 38A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT43F60L | Microchip Technology |
Description: MOSFET N-CH 600V 45A TO264 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT43GA90B | Microchip Technology |
Description: IGBT PT 900V 78A TO247 Power - Max: 337 W Current - Collector Pulsed (Icm): 129 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 78 A Part Status: Active Gate Charge: 116 nC Test Condition: 600V, 25A, 4.7Ohm, 15V Switching Energy: 875µJ (on), 425µJ (off) Td (on/off) @ 25°C: 12ns/82ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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APT44GA60B | Microchip Technology |
Description: IGBT 600V 78A 337W TO-247 Power - Max: 337 W Current - Collector Pulsed (Icm): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 78 A Gate Charge: 128 nC Test Condition: 400V, 26A, 4.7Ohm, 15V Switching Energy: 409µJ (on), 258µJ (off) Td (on/off) @ 25°C: 16ns/84ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT44GA60BD30 | Microchip Technology |
Description: IGBT 600V 78A 337W TO-247 Power - Max: 337 W Current - Collector Pulsed (Icm): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 78 A Gate Charge: 128 nC Test Condition: 400V, 26A, 4.7Ohm, 15V Switching Energy: 409µJ (on), 258µJ (off) Td (on/off) @ 25°C: 16ns/84ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT46GA90JD40 | Microchip Technology |
Description: IGBT MODULE 900V 87A 284W ISOTOP Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 87 A Part Status: Active IGBT Type: PT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V Current - Collector Cutoff (Max): 350 µA Power - Max: 284 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT47F60J | Microchip Technology |
Description: MOSFET N-CH 600V 49A ISOTOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT47GA60JD40 | Microchip Technology |
Description: IGBT MODULE 600V 87A 283W ISOTOP Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V Current - Collector Cutoff (Max): 275 µA Power - Max: 283 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 87 A Part Status: Active IGBT Type: PT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT53N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 53A TO247 Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 70 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT54GA60B | Microchip Technology |
Description: IGBT 600V 96A 416W TO-247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT56F50B2 | Microchip Technology |
Description: MOSFET N-CH 500V 56A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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APT56F50L | Microchip Technology |
Description: MOSFET N-CH 500V 56A TO264 Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| APT56F60L | Microchip Technology |
Description: MOSFET N-CH 600V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 (L) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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APT60GA60JD60 | Microchip Technology |
Description: IGBT MOD 600V 112A 356W ISOTOP Current - Collector Cutoff (Max): 275 µA Power - Max: 356 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 112 A IGBT Type: PT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V |
auf Bestellung 1233 Stücke: Lieferzeit 10-14 Tag (e) |
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APT64GA90B2D30 | Microchip Technology |
Description: IGBT PT 900V 117A TO247 Power - Max: 500 W Current - Collector Pulsed (Icm): 193 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 117 A Part Status: Active Gate Charge: 162 nC Test Condition: 600V, 38A, 4.7Ohm, 15V Switching Energy: 1192µJ (on), 1088µJ (off) Td (on/off) @ 25°C: 18ns/131ns IGBT Type: PT Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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APT66F60B2 | Microchip Technology |
Description: MOSFET N-CH 600V 70A T-MAX |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT66F60L | Microchip Technology |
Description: MOSFET N-CH 600V 70A TO264 Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT68GA60B | Microchip Technology |
Description: IGBT 600V 121A 520W TO-247 Power - Max: 520 W Current - Collector Pulsed (Icm): 202 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 121 A Part Status: Active Gate Charge: 298 nC Test Condition: 400V, 40A, 4.7Ohm, 15V Switching Energy: 715µJ (on), 607µJ (off) Td (on/off) @ 25°C: 21ns/133ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Type: Standard |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT68GA60B2D40 | Microchip Technology |
Description: IGBT 600V 121A 520W TO-247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT68GA60LD40 | Microchip Technology |
Description: IGBT 600V 121A 520W TO-264 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| APT75F50B2 | Microchip Technology |
Description: MOSFET N-CH 500V 75A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| APT75F50L | Microchip Technology |
Description: MOSFET N-CH 500V 75A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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APT77N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 77A TO247 Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.6V @ 2.96mA Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT80F60J | Microchip Technology |
Description: MOSFET N-CH 600V 84A ISOTOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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APT84F50L | Microchip Technology |
Description: MOSFET N-CH 500V 84A TO264 Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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USB2514B-AEZC | Microchip Technology |
Description: IC USB 2.0 4PORT HUB CTLR 36QFN Packaging: Tray Package / Case: 36-VFQFN Exposed Pad Function: Hub Controller Interface: USB Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 70mA Protocol: USB Supplier Device Package: 36-QFN (6x6) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 11723 Stücke: Lieferzeit 10-14 Tag (e) |
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USB2241-AEZG-06 | Microchip Technology |
Description: IC CONTROLLER USB 36QFN Packaging: Tray Package / Case: 36-VFQFN Exposed Pad Function: Controller Interface: Serial Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 135mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 36-QFN (6x6) DigiKey Programmable: Not Verified |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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24C00T-E/MNY | Microchip Technology |
Description: IC EEPROM 128BIT I2C 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128bit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 100 kHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 3.5 µs Memory Organization: 16 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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24LCS52T-I/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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25AA040AT-I/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TDFN (2x3) Memory Format: EEPROM Clock Frequency: 10 MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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25LC040AT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN DigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TDFN (2x3) Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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25LC040AT-I/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C46CT-E/MNY | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C56AT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C56BT-E/MNY | Microchip Technology |
Description: IC EEPROM 2K SPI 2MHZ 8TDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C56CT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C66AT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C66BT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C66CT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT 3MHZ 8TDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C76CT-E/MNY | Microchip Technology |
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 1K x 8, 512 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93C86CT-E/MNY | Microchip Technology |
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC46CT-E/MNY | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC56AT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC56BT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 16 DigiKey Programmable: Not Verified |
auf Bestellung 3300 Stücke: Lieferzeit 10-14 Tag (e) |
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93LC66AT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC66BT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC66CT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC76CT-E/MNY | Microchip Technology |
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 8, 512 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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93LC86CT-E/MNY | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| AC164347 | Microchip Technology | Description: SOCKET MODULE PM3 UNIV 144LQFP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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AC164351 | Microchip Technology | Description: SOCKET MODULE MPLAB PM3 121BGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AC164355 | Microchip Technology |
Description: SOCKET MODULE PM3 36VLAP 5X5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| BK0011 | Microchip Technology | Description: LITERATURE MPLAB PROGRAMMING |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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DSPIC33FJ16GS402T-50I/MM | Microchip Technology |
Description: IC MCU 16BIT 16KB FLASH 28QFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSPIC33FJ16GS402T-50I/SO | Microchip Technology |
Description: IC MCU 16BIT 16KB FLASH 28SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSPIC33FJ16GS404T-50I/ML | Microchip Technology |
Description: IC MCU 16BIT 16KB FLASH 44QFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT30N60BC6 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 30A TO247
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 30A TO247
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| APT35GA90B |
|
Hersteller: Microchip Technology
Description: IGBT 900V 63A 290W TO-247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 63 A
Part Status: Active
Gate Charge: 84 nC
Test Condition: 600V, 18A, 10Ohm, 15V
Switching Energy: 642µJ (on), 382µJ (off)
Td (on/off) @ 25°C: 12ns/104ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 900V 63A 290W TO-247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 63 A
Part Status: Active
Gate Charge: 84 nC
Test Condition: 600V, 18A, 10Ohm, 15V
Switching Energy: 642µJ (on), 382µJ (off)
Td (on/off) @ 25°C: 12ns/104ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 110 Stücke
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| APT36GA60B |
|
Hersteller: Microchip Technology
Description: IGBT PT 600V 65A TO247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 109 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 102 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 307µJ (on), 254µJ (off)
Td (on/off) @ 25°C: 16ns/122ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 600V 65A TO247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 109 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 102 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 307µJ (on), 254µJ (off)
Td (on/off) @ 25°C: 16ns/122ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT36GA60BD15 |
|
Hersteller: Microchip Technology
Description: IGBT 600V 65A 290W TO-247
Description: IGBT 600V 65A 290W TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT38N60BC6 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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| APT43F60L |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 45A TO264
Description: MOSFET N-CH 600V 45A TO264
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| APT43GA90B |
|
Hersteller: Microchip Technology
Description: IGBT PT 900V 78A TO247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 129 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 78 A
Part Status: Active
Gate Charge: 116 nC
Test Condition: 600V, 25A, 4.7Ohm, 15V
Switching Energy: 875µJ (on), 425µJ (off)
Td (on/off) @ 25°C: 12ns/82ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 900V 78A TO247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 129 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 78 A
Part Status: Active
Gate Charge: 116 nC
Test Condition: 600V, 25A, 4.7Ohm, 15V
Switching Energy: 875µJ (on), 425µJ (off)
Td (on/off) @ 25°C: 12ns/82ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.33 EUR |
| APT44GA60B |
|
Hersteller: Microchip Technology
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 70 Stücke
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Stück im Wert von UAH
| APT44GA60BD30 |
|
Hersteller: Microchip Technology
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
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| APT46GA90JD40 |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 900V 87A 284W ISOTOP
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Description: IGBT MODULE 900V 87A 284W ISOTOP
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| APT47F60J |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A ISOTOP
Description: MOSFET N-CH 600V 49A ISOTOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| APT47GA60JD40 |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 87A 283W ISOTOP
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
Current - Collector Cutoff (Max): 275 µA
Power - Max: 283 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: IGBT MODULE 600V 87A 283W ISOTOP
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
Current - Collector Cutoff (Max): 275 µA
Power - Max: 283 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| APT53N60BC6 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 53A TO247
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 600V 53A TO247
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar
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| APT54GA60B |
|
Hersteller: Microchip Technology
Description: IGBT 600V 96A 416W TO-247
Description: IGBT 600V 96A 416W TO-247
Produkt ist nicht verfügbar
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| APT56F50B2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 56A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 500V 56A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.84 EUR |
| APT56F50L |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 500V 56A TO264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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| APT56F60L |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
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| APT60GA60JD60 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP
Current - Collector Cutoff (Max): 275 µA
Power - Max: 356 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 112 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
Description: IGBT MOD 600V 112A 356W ISOTOP
Current - Collector Cutoff (Max): 275 µA
Power - Max: 356 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 112 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
auf Bestellung 1233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 45.16 EUR |
| 100+ | 36.65 EUR |
| APT64GA90B2D30 |
|
Hersteller: Microchip Technology
Description: IGBT PT 900V 117A TO247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 193 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 117 A
Part Status: Active
Gate Charge: 162 nC
Test Condition: 600V, 38A, 4.7Ohm, 15V
Switching Energy: 1192µJ (on), 1088µJ (off)
Td (on/off) @ 25°C: 18ns/131ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: IGBT PT 900V 117A TO247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 193 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 117 A
Part Status: Active
Gate Charge: 162 nC
Test Condition: 600V, 38A, 4.7Ohm, 15V
Switching Energy: 1192µJ (on), 1088µJ (off)
Td (on/off) @ 25°C: 18ns/131ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.6 EUR |
| APT66F60B2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Description: MOSFET N-CH 600V 70A T-MAX
Produkt ist nicht verfügbar
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| APT66F60L |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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| APT68GA60B |
|
Hersteller: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Power - Max: 520 W
Current - Collector Pulsed (Icm): 202 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 121 A
Part Status: Active
Gate Charge: 298 nC
Test Condition: 400V, 40A, 4.7Ohm, 15V
Switching Energy: 715µJ (on), 607µJ (off)
Td (on/off) @ 25°C: 21ns/133ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Type: Standard
Description: IGBT 600V 121A 520W TO-247
Power - Max: 520 W
Current - Collector Pulsed (Icm): 202 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 121 A
Part Status: Active
Gate Charge: 298 nC
Test Condition: 400V, 40A, 4.7Ohm, 15V
Switching Energy: 715µJ (on), 607µJ (off)
Td (on/off) @ 25°C: 21ns/133ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Type: Standard
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.24 EUR |
| APT68GA60B2D40 |
|
Hersteller: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Description: IGBT 600V 121A 520W TO-247
Produkt ist nicht verfügbar
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| APT68GA60LD40 |
|
Hersteller: Microchip Technology
Description: IGBT 600V 121A 520W TO-264
Description: IGBT 600V 121A 520W TO-264
Produkt ist nicht verfügbar
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| APT75F50B2 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Produkt ist nicht verfügbar
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| APT75F50L |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Produkt ist nicht verfügbar
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| APT77N60BC6 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 77A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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| APT80F60J |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 84A ISOTOP
Description: MOSFET N-CH 600V 84A ISOTOP
Produkt ist nicht verfügbar
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| APT84F50L |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 84A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 500V 84A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| USB2514B-AEZC |
|
Hersteller: Microchip Technology
Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 11723 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.57 EUR |
| 25+ | 2.97 EUR |
| 100+ | 2.88 EUR |
| USB2241-AEZG-06 |
|
Hersteller: Microchip Technology
Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.96 EUR |
| 25+ | 3.27 EUR |
| 100+ | 2.97 EUR |
| 24C00T-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
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| 24LCS52T-I/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
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| 25AA040AT-I/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
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| 25LC040AT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 25LC040AT-I/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93C46CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93C56AT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93C56BT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2K SPI 2MHZ 8TDFN
Description: IC EEPROM 2K SPI 2MHZ 8TDFN
Produkt ist nicht verfügbar
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| 93C56CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
Produkt ist nicht verfügbar
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| 93C66AT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93C66BT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93C66CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT 3MHZ 8TDFN
Description: IC EEPROM 4KBIT 3MHZ 8TDFN
Produkt ist nicht verfügbar
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| 93C76CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93C86CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
Produkt ist nicht verfügbar
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| 93LC46CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93LC56AT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93LC56BT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
auf Bestellung 3300 Stücke:
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| Anzahl | Preis |
|---|---|
| 3300+ | 0.7 EUR |
| 93LC66AT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN
Produkt ist nicht verfügbar
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| 93LC66BT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93LC66CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93LC76CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 93LC86CT-E/MNY |
|
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| AC164347 |
Hersteller: Microchip Technology
Description: SOCKET MODULE PM3 UNIV 144LQFP
Description: SOCKET MODULE PM3 UNIV 144LQFP
Produkt ist nicht verfügbar
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| AC164351 |
Hersteller: Microchip Technology
Description: SOCKET MODULE MPLAB PM3 121BGA
Description: SOCKET MODULE MPLAB PM3 121BGA
Produkt ist nicht verfügbar
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| AC164355 |
|
Hersteller: Microchip Technology
Description: SOCKET MODULE PM3 36VLAP 5X5
Description: SOCKET MODULE PM3 36VLAP 5X5
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| BK0011 |
Hersteller: Microchip Technology
Description: LITERATURE MPLAB PROGRAMMING
Description: LITERATURE MPLAB PROGRAMMING
Produkt ist nicht verfügbar
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| DSPIC33FJ16GS402T-50I/MM |
|
Hersteller: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 28QFN
Description: IC MCU 16BIT 16KB FLASH 28QFN
Produkt ist nicht verfügbar
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| DSPIC33FJ16GS402T-50I/SO |
|
Hersteller: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 28SOIC
Description: IC MCU 16BIT 16KB FLASH 28SOIC
Produkt ist nicht verfügbar
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| DSPIC33FJ16GS404T-50I/ML |
|
Hersteller: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 44QFN
Description: IC MCU 16BIT 16KB FLASH 44QFN
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