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1N5745D 1N5745D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 24V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5746B 1N5746B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 27V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5747B 1N5747B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 30V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5748B 1N5748B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 33V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5748C 1N5748C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 33V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5748D 1N5748D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 33V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5749B 1N5749B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 36V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5749C 1N5749C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 36V 500MW DO35
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1N5749D 1N5749D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 36V 500MW DO35
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1N5750B 1N5750B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 39V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5751B 1N5751B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 43V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5751C 1N5751C Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 43V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5752B 1N5752B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 47V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5752C 1N5752C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Operating Temperature: -65°C ~ 175°C
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1N5752D 1N5752D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5753B 1N5753B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 51V 500MW DO204AH
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
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1N5754B 1N5754B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 56V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5755B 1N5755B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 62V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 215 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5756B 1N5756B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 68V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 48 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 240 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5757B 1N5757B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 75V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5757C 1N5757C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 75V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5757D 1N5757D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 75V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
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1N5802US 1N5802US Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 50V 1A D-5A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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2+14.61 EUR
100+13.56 EUR
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1N5804US 1N5804US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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2+13.89 EUR
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1N5806US 1N5806US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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3+8.75 EUR
100+8.12 EUR
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1N5807US 1N5807US Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 50V 3A B SQMELF
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N5809US 1N5809US Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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2+12 EUR
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1N5811US 1N5811US Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N5819-1 1N5819-1 Microchip Technology 150_131894-lds-0301.pdf Description: DIODE SCHOTTKY 45V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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2+11.28 EUR
100+10.46 EUR
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1N5820US 1N5820US Microchip Technology LDS-0303-1%2C+1N5820US-1N5822US%2C1N6864US%2C+MIL-PRF-19500-620.pdf Description: DIODE SCHOTTKY 20V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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1N5821US 1N5821US Microchip Technology LDS-0303-1%2C+1N5820US-1N5822US%2C1N6864US%2C+MIL-PRF-19500-620.pdf Description: DIODE SCHOTTKY 30V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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1N5913BUR-1 1N5913BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 3.3V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5914BUR-1 1N5914BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 3.6V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5916BUR-1 1N5916BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 4.3V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5917BUR-1 1N5917BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 4.7V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5918BUR-1 1N5918BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 5.1V 1.25W DO213AB
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-213AB
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1N5919BUR-1 1N5919BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 5.6V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5921BUR-1 1N5921BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 6.8V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5922BUR-1 1N5922BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 7.5V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5923BUR-1 1N5923BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 8.2V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 3.5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5927BUR-1 1N5927BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 12V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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1N5929BUR-1 1N5929BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 15V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5930BUR-1 1N5930BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 16V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5931BUR-1 1N5931BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 18V 1.25W DO213AB
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1N5932BUR-1 1N5932BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 20V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5933BUR-1 1N5933BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 22V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17.5 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5934BUR-1 1N5934BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 24V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5937BUR-1 1N5937BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 33V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 25.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5938BUR-1 1N5938BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 36V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
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1N5939BUR-1 1N5939BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 39V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5941BUR-1 1N5941BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 47V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 67 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 35.8 V
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1N5942BUR-1 1N5942BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 51V 1.25W DO213AB
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
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1N5947BUR-1 1N5947BUR-1 Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 82V 1.25W DO213AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 160 Ohms
Voltage - Zener (Nom) (Vz): 82 V
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1N5948BUR-1 1N5948BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 91V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5949BUR-1 1N5949BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 100V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 100 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5953BUR-1 1N5953BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 150V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 600 Ohms
Voltage - Zener (Nom) (Vz): 150 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5955BUR-1 1N5955BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 180V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 900 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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1N5969 1N5969 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 6.2V 5W AXIAL
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5995C 1N5995C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 6.2V 500MW DO35
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1N5995D 1N5995D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 6.2V 500MW DO204AH
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5745D 10921-sa5-55-datasheet
1N5745D
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5746B 1N5728B_1N5757B-1.pdf
1N5746B
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5747B 1N5728B_1N5757B-1.pdf
1N5747B
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5748B 1N5728B_1N5757B-1.pdf
1N5748B
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5748C 10921-sa5-55-datasheet
1N5748C
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5748D 10921-sa5-55-datasheet
1N5748D
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5749B 1N5728B_1N5757B-1.pdf
1N5749B
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5749C 10921-sa5-55-datasheet
1N5749C
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
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1N5749D 10921-sa5-55-datasheet
1N5749D
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
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1N5750B 1N5728B_1N5757B-1.pdf
1N5750B
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5751B 1N5728B_1N5757B-1.pdf
1N5751B
Hersteller: Microchip Technology
Description: DIODE ZENER 43V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5751C 1N5728B_1N5757B-1.pdf
1N5751C
Hersteller: Microchip Technology
Description: DIODE ZENER 43V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5752B 1N5728B_1N5757B-1.pdf
1N5752B
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5752C 10921-sa5-55-datasheet
1N5752C
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Operating Temperature: -65°C ~ 175°C
Produkt ist nicht verfügbar
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1N5752D 10921-sa5-55-datasheet
1N5752D
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5753B 1N5728B_1N5757B-1.pdf
1N5753B
Hersteller: Microchip Technology
Description: DIODE ZENER 51V 500MW DO204AH
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Produkt ist nicht verfügbar
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1N5754B 1N5728B_1N5757B-1.pdf
1N5754B
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5755B 1N5728B_1N5757B-1.pdf
1N5755B
Hersteller: Microchip Technology
Description: DIODE ZENER 62V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 215 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5756B 10921-sa5-55-datasheet
1N5756B
Hersteller: Microchip Technology
Description: DIODE ZENER 68V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 48 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 240 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5757B 10921-sa5-55-datasheet
1N5757B
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5757C 10921-sa5-55-datasheet
1N5757C
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5757D 10921-sa5-55-datasheet
1N5757D
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar
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1N5802US 132687-lds-0211-1-datasheet
1N5802US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 1A D-5A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.61 EUR
100+13.56 EUR
Mindestbestellmenge: 2 Stücke
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1N5804US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
1N5804US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.89 EUR
100+12.89 EUR
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1N5806US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
1N5806US
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 3026 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.75 EUR
100+8.12 EUR
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1N5807US LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
1N5807US
Hersteller: Microchip Technology
Description: DIODE STANDARD 50V 3A B SQMELF
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5809US LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
1N5809US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12 EUR
100+11.14 EUR
Mindestbestellmenge: 2 Stücke
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1N5811US LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
1N5811US
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1757 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.31 EUR
100+9.57 EUR
Mindestbestellmenge: 2 Stücke
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1N5819-1 150_131894-lds-0301.pdf
1N5819-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.28 EUR
100+10.46 EUR
Mindestbestellmenge: 2 Stücke
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1N5820US LDS-0303-1%2C+1N5820US-1N5822US%2C1N6864US%2C+MIL-PRF-19500-620.pdf
1N5820US
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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1N5821US LDS-0303-1%2C+1N5820US-1N5822US%2C1N6864US%2C+MIL-PRF-19500-620.pdf
1N5821US
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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1N5913BUR-1 10865-sa3-35-datasheet
1N5913BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 3.3V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5914BUR-1 10865-sa3-35-datasheet
1N5914BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 3.6V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5916BUR-1 10865-sa3-35-datasheet
1N5916BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 4.3V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5917BUR-1 10865-sa3-35-datasheet
1N5917BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5918BUR-1 10865-sa3-35-datasheet
1N5918BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-213AB
Produkt ist nicht verfügbar
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1N5919BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5919BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5921BUR-1 10865-sa3-35-datasheet
1N5921BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5922BUR-1 10865-sa3-35-datasheet
1N5922BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5923BUR-1 10865-sa3-35-datasheet
1N5923BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 8.2V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 3.5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5927BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5927BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
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1N5929BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5929BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5930BUR-1 10865-sa3-35-datasheet
1N5930BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5931BUR-1 10865-sa3-35-datasheet
1N5931BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 1.25W DO213AB
Produkt ist nicht verfügbar
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1N5932BUR-1 10865-sa3-35-datasheet
1N5932BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5933BUR-1 10865-sa3-35-datasheet
1N5933BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 22V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17.5 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5934BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5934BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5937BUR-1 10865-sa3-35-datasheet
1N5937BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 25.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5938BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5938BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
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1N5939BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5939BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5941BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5941BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 67 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 35.8 V
Produkt ist nicht verfügbar
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1N5942BUR-1 10865-sa3-35-datasheet
1N5942BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 51V 1.25W DO213AB
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Produkt ist nicht verfügbar
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1N5947BUR-1 1N5913BUR-1-1N5956BUR-1.pdf
1N5947BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 1.25W DO213AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 160 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Produkt ist nicht verfügbar
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1N5948BUR-1 10865-sa3-35-datasheet
1N5948BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 91V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5949BUR-1 10865-sa3-35-datasheet
1N5949BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 100V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 100 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5953BUR-1 10865-sa3-35-datasheet
1N5953BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 150V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 600 Ohms
Voltage - Zener (Nom) (Vz): 150 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5955BUR-1 10865-sa3-35-datasheet
1N5955BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 1.25W DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 900 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5969 10913-sa5-37-datasheet
1N5969
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 5W AXIAL
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+37.14 EUR
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1N5995C 10923-sa5-60-datasheet
1N5995C
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Produkt ist nicht verfügbar
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1N5995D 10923-sa5-60-datasheet
1N5995D
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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