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1N5187US 1N5187US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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1N5188 1N5188 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5188US 1N5188US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5189 1N5189 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5189US 1N5189US Microchip Technology 11078-sd61a-datasheet Description: DIODE STANDARD 500V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5190 1N5190 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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1N5194 1N5194 Microchip Technology 8848-lds-0031-datasheet Description: DIODE STANDARD 70V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5194UR 1N5194UR Microchip Technology 8850-lds-0032-datasheet Description: DIODE STANDARD 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5195 1N5195 Microchip Technology 8852-lds-0033-datasheet Description: DIODE STD 180V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5195UR 1N5195UR Microchip Technology 8854-lds-0034-datasheet Description: DIODE STD 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5196 1N5196 Microchip Technology 8856-lds-0035-datasheet Description: DIODE STD 225V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5196UR 1N5196UR Microchip Technology 8858-lds-0036-datasheet Description: DIODE STD 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5415 1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
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1N5416 1N5416 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 511 Stücke:
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2+9.26 EUR
100+8.6 EUR
Mindestbestellmenge: 2
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1N5416US 1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 82 Stücke:
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2+15.7 EUR
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1N5417 1N5417 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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3+6.88 EUR
100+6.4 EUR
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1N5417US 1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N5418 1N5418 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 2118 Stücke:
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100+9.37 EUR
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1N5418US 1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 102 Stücke:
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2+14.61 EUR
100+13.56 EUR
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1N5419 1N5419 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
auf Bestellung 169 Stücke:
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3+8.03 EUR
100+7.45 EUR
Mindestbestellmenge: 3
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1N5419US 1N5419US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Produkt ist nicht verfügbar
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1N5420 1N5420 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 110 Stücke:
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2+11.25 EUR
100+10.44 EUR
Mindestbestellmenge: 2
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1N5420US 1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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1N5533B 1N5533B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Produkt ist nicht verfügbar
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1N5534B 1N5534B Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 101 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Produkt ist nicht verfügbar
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1N5535B 1N5535B Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 102 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Produkt ist nicht verfügbar
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1N5536B 1N5536B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
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1N5537B 1N5537B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 17V 500MW DO35
Produkt ist nicht verfügbar
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1N5538B 1N5538B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Produkt ist nicht verfügbar
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1N5539B 1N5539B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 19V 500MW DO35
Produkt ist nicht verfügbar
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1N5542B 1N5542B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 109 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 21.6 V
Produkt ist nicht verfügbar
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1N5546B 1N5546B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 113 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Produkt ist nicht verfügbar
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1N5550US 1N5550US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 38 Stücke:
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2+17 EUR
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1N5551US 1N5551US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N5552US 1N5552US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 600V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1N5553US 1N5553US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 800V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5554US 1N5554US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 1000V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N5555 1N5555 Microchip Technology lds-0094.pdf Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N5556 1N5556 Microchip Technology lds-0094.pdf Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N5614 1N5614 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5614US 1N5614US Microchip Technology 10967-sa7-45-datasheet Description: DIODE STANDARD 200V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615 1N5615 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
auf Bestellung 455 Stücke:
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1N5615US 1N5615US Microchip Technology 11062-sd47a-datasheet Description: DIODE STANDARD 200V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5616 1N5616 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N5616US 1N5616US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N5617 1N5617 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N5617US 1N5617US Microchip Technology SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf Description: DIODE STANDARD 400V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N5618 1N5618 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Produkt ist nicht verfügbar
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1N5618US 1N5618US Microchip Technology 10967-sa7-45-datasheet Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
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1N5619 1N5619 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
auf Bestellung 143 Stücke:
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1N5619US 1N5619US Microchip Technology SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
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1N5620 1N5620 Microchip Technology 10968-sa7-47-datasheet Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
auf Bestellung 322 Stücke:
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1N5620US 1N5620US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Produkt ist nicht verfügbar
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1N5622 1N5622 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Produkt ist nicht verfügbar
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1N5728B 1N5728B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5728C 1N5728C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5728D 1N5728D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5729B 1N5729B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5729C 1N5729C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5729D 1N5729D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5187US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5187US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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1N5188 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5188
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5188US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5188US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5189 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5189
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5189US 11078-sd61a-datasheet
1N5189US
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5190 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5190
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.49 EUR
Mindestbestellmenge: 2
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1N5194 8848-lds-0031-datasheet
1N5194
Hersteller: Microchip Technology
Description: DIODE STANDARD 70V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5194UR 8850-lds-0032-datasheet
1N5194UR
Hersteller: Microchip Technology
Description: DIODE STANDARD 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5195 8852-lds-0033-datasheet
1N5195
Hersteller: Microchip Technology
Description: DIODE STD 180V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5195UR 8854-lds-0034-datasheet
1N5195UR
Hersteller: Microchip Technology
Description: DIODE STD 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5196 8856-lds-0035-datasheet
1N5196
Hersteller: Microchip Technology
Description: DIODE STD 225V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5196UR 8858-lds-0036-datasheet
1N5196UR
Hersteller: Microchip Technology
Description: DIODE STD 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5415 124360-lds-0231-datasheet
1N5415
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
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1N5416 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5416
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 511 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
100+8.6 EUR
Mindestbestellmenge: 2
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1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
1N5416US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.7 EUR
Mindestbestellmenge: 2
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1N5417 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5417
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.88 EUR
100+6.4 EUR
Mindestbestellmenge: 3
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1N5417US 11075-lds-0231-1-datasheet
1N5417US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N5418 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5418
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.1 EUR
100+9.37 EUR
Mindestbestellmenge: 2
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1N5418US 11075-lds-0231-1-datasheet
1N5418US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.61 EUR
100+13.56 EUR
Mindestbestellmenge: 2
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1N5419 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5419
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.03 EUR
100+7.45 EUR
Mindestbestellmenge: 3
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1N5419US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
1N5419US
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Produkt ist nicht verfügbar
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1N5420 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5420
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.25 EUR
100+10.44 EUR
Mindestbestellmenge: 2
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1N5420US 11075-lds-0231-1-datasheet
1N5420US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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1N5533B 123956-lds-0037-1-datasheet
1N5533B
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Produkt ist nicht verfügbar
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1N5534B 1N5518B_1N5546B-1.pdf
1N5534B
Hersteller: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 101 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Produkt ist nicht verfügbar
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1N5535B 1N5518B_1N5546B-1.pdf
1N5535B
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 102 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Produkt ist nicht verfügbar
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1N5536B 123956-lds-0037-1-datasheet
1N5536B
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
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1N5537B 123956-lds-0037-1-datasheet
1N5537B
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 500MW DO35
Produkt ist nicht verfügbar
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1N5538B 123956-lds-0037-1-datasheet
1N5538B
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Produkt ist nicht verfügbar
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1N5539B 123956-lds-0037-1-datasheet
1N5539B
Hersteller: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
Produkt ist nicht verfügbar
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1N5542B 123956-lds-0037-1-datasheet
1N5542B
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 109 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 21.6 V
Produkt ist nicht verfügbar
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1N5546B 123956-lds-0037-1-datasheet
1N5546B
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 113 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Produkt ist nicht verfügbar
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1N5550US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5550US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17 EUR
Mindestbestellmenge: 2
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1N5551US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5551US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.65 EUR
100+9.88 EUR
Mindestbestellmenge: 2
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1N5552US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5552US
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 75 Stücke:
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1N5553US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5553US
Hersteller: Microchip Technology
Description: DIODE STANDARD 800V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 66 Stücke:
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1N5554US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5554US
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 108 Stücke:
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2+12.44 EUR
100+11.57 EUR
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1N5555 lds-0094.pdf
1N5555
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 191 Stücke:
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1N5556 lds-0094.pdf
1N5556
Hersteller: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 503 Stücke:
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Anzahl Preis
1+34.32 EUR
100+31.88 EUR
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1N5614 11061-sd46a-datasheet
1N5614
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
auf Bestellung 140 Stücke:
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Anzahl Preis
3+6.32 EUR
100+5.86 EUR
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1N5614US 10967-sa7-45-datasheet
1N5614US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
auf Bestellung 216 Stücke:
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2+8.85 EUR
100+8.21 EUR
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1N5615 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
1N5615
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
auf Bestellung 455 Stücke:
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3+6.72 EUR
100+6.25 EUR
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1N5615US 11062-sd47a-datasheet
1N5615US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
auf Bestellung 630 Stücke:
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Anzahl Preis
2+11.77 EUR
100+10.93 EUR
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1N5616 11061-sd46a-datasheet
1N5616
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 75 Stücke:
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4+5.84 EUR
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1N5616US 10967-sa7-45-datasheet
1N5616US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 138 Stücke:
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Anzahl Preis
2+10.56 EUR
100+9.8 EUR
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1N5617 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
1N5617
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 628 Stücke:
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Anzahl Preis
3+6.53 EUR
100+6.07 EUR
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1N5617US SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf
1N5617US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
auf Bestellung 580 Stücke:
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Anzahl Preis
2+9.47 EUR
100+8.8 EUR
Mindestbestellmenge: 2
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1N5618 11061-sd46a-datasheet
1N5618
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Produkt ist nicht verfügbar
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1N5618US 10967-sa7-45-datasheet
1N5618US
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
auf Bestellung 168 Stücke:
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Anzahl Preis
2+11.6 EUR
100+10.76 EUR
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1N5619 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
1N5619
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
auf Bestellung 143 Stücke:
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Anzahl Preis
3+7.55 EUR
100+7.02 EUR
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1N5619US SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf
1N5619US
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
auf Bestellung 123 Stücke:
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Anzahl Preis
2+9.47 EUR
100+8.8 EUR
Mindestbestellmenge: 2
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1N5620 10968-sa7-47-datasheet
1N5620
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
auf Bestellung 322 Stücke:
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Anzahl Preis
3+6.92 EUR
100+6.43 EUR
Mindestbestellmenge: 3
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1N5620US 10967-sa7-45-datasheet
1N5620US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Produkt ist nicht verfügbar
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1N5622 11061-sd46a-datasheet
1N5622
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Produkt ist nicht verfügbar
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1N5728B 1N5728B_1N5757B-1.pdf
1N5728B
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5728C 10921-sa5-55-datasheet
1N5728C
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5728D 10921-sa5-55-datasheet
1N5728D
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5729B 10921-sa5-55-datasheet
1N5729B
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5729C 10921-sa5-55-datasheet
1N5729C
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5729D 10921-sa5-55-datasheet
1N5729D
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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