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1N4932A 1N4932A Microchip Technology 5837-1n4916-4932a-datasheet Description: DIODE ZENER 19.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Produkt ist nicht verfügbar
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1N4938-1 1N4938-1 Microchip Technology 5838-1n4938-1-datasheet Description: DIODE GEN PURP 175V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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1N4942 1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N4944 1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1N4954US 1N4954US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 6.8V 5W D5B
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1N4955US 1N4955US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 7.5V 5W D5B
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1N4960US 1N4960US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 12V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Produkt ist nicht verfügbar
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1N4962 1N4962 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 15V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N4962US 1N4962US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 15V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Produkt ist nicht verfügbar
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1N4963US 1N4963US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 16V 5W D5B
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1N4964 1N4964 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 18V 5W AXIAL
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1N4965 1N4965 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 20V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4.5 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 15.2 V
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1N4965US 1N4965US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 20V 5W D5B
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1N4967 1N4967 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 24V 5W AXIAL
Produkt ist nicht verfügbar
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1N4968 1N4968 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 27V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Produkt ist nicht verfügbar
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1N4968US 1N4968US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 27V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Produkt ist nicht verfügbar
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1N4969 1N4969 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 30V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
auf Bestellung 191 Stücke:
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1N4969US 1N4969US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Produkt ist nicht verfügbar
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1N4970 1N4970 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 33V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
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1N4970US 1N4970US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 33V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
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1N4971 1N4971 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 36V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
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1N4971US 1N4971US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 36V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
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1N4972 1N4972 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 39V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 29.7 V
auf Bestellung 121 Stücke:
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1N4976 1N4976 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 56V 5W AXIAL
Produkt ist nicht verfügbar
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1N4976US 1N4976US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 56V 5W D5B
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1N4979 1N4979 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 75V 5W AXIAL
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1N4979US 1N4979US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 75V 5W D5B
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1N4980 1N4980 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 82V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
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1N4980US 1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
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1N4988 1N4988 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 180V 5W AXIAL
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1N4988US 1N4988US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 180V 5W D5B
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1N4989 1N4989 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 200V 5W AXIAL
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1N4989US 1N4989US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
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1N5181 Microchip Technology 10953-lds-0266-datasheet Description: DIODE STD 4000V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Produkt ist nicht verfügbar
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1N5182 Microchip Technology 10953-lds-0266-datasheet Description: DIODE STD 5000V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Produkt ist nicht verfügbar
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1N5183 Microchip Technology LDS-0266%2C+1N3643-47_1N4254-57_1N5181-84%2C+MIL-PRF-19500-279.pdf Description: DIODE STD 7500V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7500 V
Produkt ist nicht verfügbar
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1N5184 Microchip Technology 10953-lds-0266-datasheet Description: DIODE STD 10000V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
Produkt ist nicht verfügbar
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1N5186 1N5186 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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1N5186US 1N5186US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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1N5187 1N5187 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 110 Stücke:
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1N5187US 1N5187US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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1N5188 1N5188 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5188US 1N5188US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5189 1N5189 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5189US 1N5189US Microchip Technology 11078-sd61a-datasheet Description: DIODE STANDARD 500V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5190 1N5190 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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1N5194 1N5194 Microchip Technology 8848-lds-0031-datasheet Description: DIODE STANDARD 70V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5194UR 1N5194UR Microchip Technology 8850-lds-0032-datasheet Description: DIODE STANDARD 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5195 1N5195 Microchip Technology 8852-lds-0033-datasheet Description: DIODE STD 180V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5195UR 1N5195UR Microchip Technology 8854-lds-0034-datasheet Description: DIODE STD 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5196 1N5196 Microchip Technology 8856-lds-0035-datasheet Description: DIODE STD 225V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5196UR 1N5196UR Microchip Technology 8858-lds-0036-datasheet Description: DIODE STD 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5415 1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
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1N5416 1N5416 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 511 Stücke:
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100+8.6 EUR
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1N5416US 1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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2+15.7 EUR
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1N5417 1N5417 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N5417US 1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N5418 1N5418 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N5418US 1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N5419 1N5419 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
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3+8.03 EUR
100+7.45 EUR
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1N4932A 5837-1n4916-4932a-datasheet
1N4932A
Hersteller: Microchip Technology
Description: DIODE ZENER 19.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Produkt ist nicht verfügbar
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1N4938-1 5838-1n4938-1-datasheet
1N4938-1
Hersteller: Microchip Technology
Description: DIODE GEN PURP 175V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 324 Stücke:
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4+5.02 EUR
100+4.66 EUR
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1N4942 129281-lds-0295-datasheet
1N4942
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N4944 129281-lds-0295-datasheet
1N4944
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1N4954US 11059-sd44a-datasheet
1N4954US
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 5W D5B
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Anzahl Preis
2+14.1 EUR
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1N4955US 11059-sd44a-datasheet
1N4955US
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 5W D5B
Produkt ist nicht verfügbar
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1N4960US 11059-sd44a-datasheet
1N4960US
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Produkt ist nicht verfügbar
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1N4962 10913-sa5-37-datasheet
1N4962
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
auf Bestellung 287 Stücke:
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Anzahl Preis
2+10.17 EUR
100+9.44 EUR
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1N4962US 11059-sd44a-datasheet
1N4962US
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Produkt ist nicht verfügbar
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1N4963US 11059-sd44a-datasheet
1N4963US
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 5W D5B
Produkt ist nicht verfügbar
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1N4964 10913-sa5-37-datasheet
1N4964
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 5W AXIAL
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2+10.7 EUR
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1N4965 10913-sa5-37-datasheet
1N4965
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4.5 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 15.2 V
auf Bestellung 127 Stücke:
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2+11.35 EUR
100+10.55 EUR
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1N4965US 11059-sd44a-datasheet
1N4965US
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 5W D5B
Produkt ist nicht verfügbar
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1N4967 10913-sa5-37-datasheet
1N4967
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W AXIAL
Produkt ist nicht verfügbar
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1N4968 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
1N4968
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Produkt ist nicht verfügbar
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1N4968US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4968US
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Produkt ist nicht verfügbar
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1N4969 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
1N4969
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
auf Bestellung 191 Stücke:
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Anzahl Preis
2+10.07 EUR
100+9.36 EUR
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1N4969US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4969US
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Produkt ist nicht verfügbar
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1N4970 10913-sa5-37-datasheet
1N4970
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.3 EUR
100+9.56 EUR
Mindestbestellmenge: 2
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1N4970US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4970US
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.47 EUR
100+18.07 EUR
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1N4971 10913-sa5-37-datasheet
1N4971
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.58 EUR
100+9.83 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
1N4971US 11059-sd44a-datasheet
1N4971US
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.82 EUR
Mindestbestellmenge: 2
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1N4972 10913-sa5-37-datasheet
1N4972
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 29.7 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.49 EUR
100+9.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
1N4976 10913-sa5-37-datasheet
1N4976
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 5W AXIAL
Produkt ist nicht verfügbar
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1N4976US 11059-sd44a-datasheet
1N4976US
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 5W D5B
Produkt ist nicht verfügbar
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1N4979 10913-sa5-37-datasheet
1N4979
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 5W AXIAL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4979US 11059-sd44a-datasheet
1N4979US
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 5W D5B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4980 10913-sa5-37-datasheet
1N4980
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4980US 11059-sd44a-datasheet
1N4980US
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4988 10913-sa5-37-datasheet
1N4988
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 5W AXIAL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4988US 11059-sd44a-datasheet
1N4988US
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 5W D5B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4989 10913-sa5-37-datasheet
1N4989
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W AXIAL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4989US 11059-sd44a-datasheet
1N4989US
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Produkt ist nicht verfügbar
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1N5181 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE STD 4000V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Produkt ist nicht verfügbar
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1N5182 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE STD 5000V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Produkt ist nicht verfügbar
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1N5183 LDS-0266%2C+1N3643-47_1N4254-57_1N5181-84%2C+MIL-PRF-19500-279.pdf
Hersteller: Microchip Technology
Description: DIODE STD 7500V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5184 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE STD 10000V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
Produkt ist nicht verfügbar
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1N5186 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5186
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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1N5186US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5186US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5187 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5187
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.49 EUR
100+10.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
1N5187US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5187US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5188 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5188
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5188US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5188US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5189 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5189
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5189US 11078-sd61a-datasheet
1N5189US
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5190 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5190
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.49 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
1N5194 8848-lds-0031-datasheet
1N5194
Hersteller: Microchip Technology
Description: DIODE STANDARD 70V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5194UR 8850-lds-0032-datasheet
1N5194UR
Hersteller: Microchip Technology
Description: DIODE STANDARD 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5195 8852-lds-0033-datasheet
1N5195
Hersteller: Microchip Technology
Description: DIODE STD 180V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5195UR 8854-lds-0034-datasheet
1N5195UR
Hersteller: Microchip Technology
Description: DIODE STD 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5196 8856-lds-0035-datasheet
1N5196
Hersteller: Microchip Technology
Description: DIODE STD 225V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5196UR 8858-lds-0036-datasheet
1N5196UR
Hersteller: Microchip Technology
Description: DIODE STD 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5415 124360-lds-0231-datasheet
1N5415
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
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1N5416 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5416
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 511 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
100+8.6 EUR
Mindestbestellmenge: 2
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1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
1N5416US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.7 EUR
Mindestbestellmenge: 2
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1N5417 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5417
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.88 EUR
100+6.4 EUR
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1N5417US 11075-lds-0231-1-datasheet
1N5417US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N5418 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5418
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.1 EUR
100+9.37 EUR
Mindestbestellmenge: 2
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1N5418US 11075-lds-0231-1-datasheet
1N5418US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.61 EUR
100+13.56 EUR
Mindestbestellmenge: 2
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1N5419 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5419
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.03 EUR
100+7.45 EUR
Mindestbestellmenge: 3
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