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1N4965US 1N4965US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 20V 5W D5B
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1N4967 1N4967 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 24V 5W AXIAL
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1N4968 1N4968 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 27V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4968US 1N4968US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 27V 5W D5B
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 6 Ohms
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1N4969 1N4969 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 30V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4969US 1N4969US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
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1N4970 1N4970 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 33V 5W AXIAL
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
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1N4970US 1N4970US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 33V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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1N4971 1N4971 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 36V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4971US 1N4971US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 36V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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1N4972 1N4972 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 39V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4976 1N4976 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 56V 5W AXIAL
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1N4976US 1N4976US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 56V 5W D5B
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1N4979 1N4979 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 75V 5W AXIAL
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1N4979US 1N4979US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 75V 5W D5B
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1N4980 1N4980 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 82V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4980US 1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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1N4988 1N4988 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 180V 5W AXIAL
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1N4988US 1N4988US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 180V 5W D5B
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1N4989 1N4989 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 200V 5W AXIAL
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1N4989US 1N4989US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
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1N5181 Microchip Technology 10953-lds-0266-datasheet Description: DIODE STD 4000V 100MA S AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Current - Average Rectified (Io): 100mA
Technology: Standard
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
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1N5182 Microchip Technology 10953-lds-0266-datasheet Description: DIODE STD 5000V 100MA S AXIAL
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 5000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
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1N5183 Microchip Technology LDS-0266%2C+1N3643-47_1N4254-57_1N5181-84%2C+MIL-PRF-19500-279.pdf Description: DIODE STD 7500V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7500 V
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1N5184 Microchip Technology 10953-lds-0266-datasheet Description: DIODE STD 10000V 100MA S AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
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1N5186 1N5186 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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1N5186US 1N5186US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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1N5187 1N5187 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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2+11.46 EUR
100+10.63 EUR
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1N5187US 1N5187US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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1N5188 1N5188 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5188US 1N5188US Microchip Technology SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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1N5189 1N5189 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5189US 1N5189US Microchip Technology 11078-sd61a-datasheet Description: DIODE STANDARD 500V 3A D5B
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
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1N5190 1N5190 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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1N5194 Microchip Technology Description: DIODE STANDARD 70V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
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1N5194UR Microchip Technology Description: DIODE STANDARD 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
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1N5195 Microchip Technology Description: DIODE STD 180V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
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1N5195UR Microchip Technology Description: DIODE STD 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
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1N5196 Microchip Technology Description: DIODE STD 225V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
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1N5196UR Microchip Technology Description: DIODE STD 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
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1N5415 1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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1N5416 1N5416 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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1N5416US 1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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1N5417 1N5417 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N5417US 1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 200V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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1N5418 1N5418 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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1N5418US 1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N5419 1N5419 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A B SQMELF
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N5419US 1N5419US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A D5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
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1N5420 1N5420 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
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1N5420US 1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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1N5533B 1N5533B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5534B 1N5534B Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 101 Ohms
Voltage - Zener (Nom) (Vz): 14 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
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1N5535B 1N5535B Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 102 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5536B 1N5536B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
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1N5537B 1N5537B Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 17V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 104 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
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1N5538B 1N5538B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 105 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5539B 1N5539B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 19V 500MW DO35
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1N5542B 1N5542B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 24V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 21.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 109 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5546B 1N5546B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 113 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
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1N4965US 11059-sd44a-datasheet
1N4965US
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 5W D5B
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1N4967 10913-sa5-37-datasheet
1N4967
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W AXIAL
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1N4968 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
1N4968
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4968US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4968US
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 5W D5B
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 6 Ohms
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1N4969 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
1N4969
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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2+10.07 EUR
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1N4969US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4969US
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Produkt ist nicht verfügbar
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1N4970 10913-sa5-37-datasheet
1N4970
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 5W AXIAL
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
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2+10.3 EUR
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1N4970US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
1N4970US
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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1+19.47 EUR
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1N4971 10913-sa5-37-datasheet
1N4971
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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AnzahlPreis
2+10.58 EUR
100+9.83 EUR
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1N4971US 11059-sd44a-datasheet
1N4971US
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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2+13.82 EUR
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1N4972 10913-sa5-37-datasheet
1N4972
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 121 Stücke:
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AnzahlPreis
2+10.49 EUR
100+9.73 EUR
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1N4976 10913-sa5-37-datasheet
1N4976
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 5W AXIAL
Produkt ist nicht verfügbar
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1N4976US 11059-sd44a-datasheet
1N4976US
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 5W D5B
Produkt ist nicht verfügbar
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1N4979 10913-sa5-37-datasheet
1N4979
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 5W AXIAL
Produkt ist nicht verfügbar
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1N4979US 11059-sd44a-datasheet
1N4979US
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 5W D5B
Produkt ist nicht verfügbar
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1N4980 10913-sa5-37-datasheet
1N4980
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4980US 11059-sd44a-datasheet
1N4980US
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4988 10913-sa5-37-datasheet
1N4988
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 5W AXIAL
Produkt ist nicht verfügbar
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1N4988US 11059-sd44a-datasheet
1N4988US
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 5W D5B
Produkt ist nicht verfügbar
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1N4989 10913-sa5-37-datasheet
1N4989
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W AXIAL
Produkt ist nicht verfügbar
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1N4989US 11059-sd44a-datasheet
1N4989US
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Produkt ist nicht verfügbar
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1N5181 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE STD 4000V 100MA S AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Current - Average Rectified (Io): 100mA
Technology: Standard
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar
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1N5182 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE STD 5000V 100MA S AXIAL
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 5000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Produkt ist nicht verfügbar
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1N5183 LDS-0266%2C+1N3643-47_1N4254-57_1N5181-84%2C+MIL-PRF-19500-279.pdf
Hersteller: Microchip Technology
Description: DIODE STD 7500V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7500 V
auf Bestellung 100 Stücke:
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AnzahlPreis
1+77.12 EUR
100+71.61 EUR
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1N5184 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE STD 10000V 100MA S AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5186 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5186
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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1N5186US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5186US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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1N5187 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5187
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.46 EUR
100+10.63 EUR
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1N5187US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5187US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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1N5188 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5188
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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1N5188US SD61A%2C+1N5186US_1N5190US%2C+MIL-PRF-19500-424.pdf
1N5188US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5189 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5189
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
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1N5189US 11078-sd61a-datasheet
1N5189US
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Produkt ist nicht verfügbar
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1N5190 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5190
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.46 EUR
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1N5194
Hersteller: Microchip Technology
Description: DIODE STANDARD 70V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5194UR
Hersteller: Microchip Technology
Description: DIODE STANDARD 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
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1N5195
Hersteller: Microchip Technology
Description: DIODE STD 180V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5195UR
Hersteller: Microchip Technology
Description: DIODE STD 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
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1N5196
Hersteller: Microchip Technology
Description: DIODE STD 225V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5196UR
Hersteller: Microchip Technology
Description: DIODE STD 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
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1N5415 124360-lds-0231-datasheet
1N5415
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5416 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5416
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
auf Bestellung 511 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.26 EUR
100+8.6 EUR
Mindestbestellmenge: 2 Stücke
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1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
1N5416US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+15.7 EUR
Mindestbestellmenge: 2 Stücke
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1N5417 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5417
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 669 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.9 EUR
100+6.42 EUR
Mindestbestellmenge: 3 Stücke
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1N5417US 11075-lds-0231-1-datasheet
1N5417US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5418 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5418
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.1 EUR
100+9.37 EUR
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1N5418US 11075-lds-0231-1-datasheet
1N5418US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
auf Bestellung 102 Stücke:
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AnzahlPreis
2+14.61 EUR
100+13.56 EUR
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1N5419 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5419
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B SQMELF
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
auf Bestellung 169 Stücke:
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3+8.03 EUR
100+7.45 EUR
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1N5419US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
1N5419US
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Produkt ist nicht verfügbar
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1N5420 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
1N5420
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
auf Bestellung 110 Stücke:
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2+11.25 EUR
100+10.44 EUR
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1N5420US 11075-lds-0231-1-datasheet
1N5420US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5533B 123956-lds-0037-1-datasheet
1N5533B
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5534B 1N5518B_1N5546B-1.pdf
1N5534B
Hersteller: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 101 Ohms
Voltage - Zener (Nom) (Vz): 14 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar
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1N5535B 1N5518B_1N5546B-1.pdf
1N5535B
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 102 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5536B 123956-lds-0037-1-datasheet
1N5536B
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
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1N5537B 1N5518B_1N5546B-1.pdf
1N5537B
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 104 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
Produkt ist nicht verfügbar
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1N5538B 123956-lds-0037-1-datasheet
1N5538B
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 105 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5539B 123956-lds-0037-1-datasheet
1N5539B
Hersteller: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
Produkt ist nicht verfügbar
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1N5542B 123956-lds-0037-1-datasheet
1N5542B
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 21.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 109 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5546B 123956-lds-0037-1-datasheet
1N5546B
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 113 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Produkt ist nicht verfügbar
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