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1N5538B 1N5538B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 105 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5539B 1N5539B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 19V 500MW DO35
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1N5542B 1N5542B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 24V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 21.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 109 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5546B 1N5546B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 113 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
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1N5550US 1N5550US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N5551US 1N5551US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N5552US 1N5552US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 600V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1N5553US 1N5553US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 800V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5554US 1N5554US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 1000V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N5555 1N5555 Microchip Technology lds-0094.pdf Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N5556 1N5556 Microchip Technology lds-0094.pdf Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N5614 1N5614 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5614US 1N5614US Microchip Technology 10967-sa7-45-datasheet Description: DIODE STANDARD 200V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615 1N5615 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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1N5615US 1N5615US Microchip Technology 11062-sd47a-datasheet Description: DIODE STANDARD 200V 1A D5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5616 1N5616 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Package / Case: A, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
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1N5616US 1N5616US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 400V 1A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5617 1N5617 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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1N5617US 1N5617US Microchip Technology SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf Description: DIODE STANDARD 400V 1A D5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
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1N5618 1N5618 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 600V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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1N5618US 1N5618US Microchip Technology 10967-sa7-45-datasheet Description: DIODE STANDARD 600V 1A D5A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5619 1N5619 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 600V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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1N5619US 1N5619US Microchip Technology SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf Description: DIODE STANDARD 600V 1A D5A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
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1N5620 1N5620 Microchip Technology 10968-sa7-47-datasheet Description: DIODE GEN PURP 800V 1A AXIAL
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
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1N5620US 1N5620US Microchip Technology 10967-sa7-45-datasheet Description: DIODE GEN PURP 800V 1A D5A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5622 1N5622 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
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1N5728B 1N5728B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5728C 1N5728C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 4.7V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5728D 1N5728D Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
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1N5729B 1N5729B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Tolerance: ±5%
Packaging: Bulk
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1N5729C 1N5729C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5729D 1N5729D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5730B 1N5730B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 5.6V 500MW DO204AH
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5730C 1N5730C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.6V 500MW DO35
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1N5730D 1N5730D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 5.6V 500MW DO35
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1N5731B 1N5731B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
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1N5731C 1N5731C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 6.2V 500MW DO35
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1N5731D 1N5731D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 6.2V 500MW DO35
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1N5732B 1N5732B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
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1N5732C 1N5732C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 6.8V 500MW DO35
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1N5732D 1N5732D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 6.8V 500MW DO35
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1N5733B 1N5733B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 7.5V 500MW DO204AH
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5733C 1N5733C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 7.5V 500MW DO35
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1N5734B 1N5734B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 8.2V 500MW DO204AH
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
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1N5735B 1N5735B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 9.1V 500MW DO204AH
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5735C 1N5735C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 9.1V 500MW DO35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
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1N5735D 1N5735D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 9.1V 500MW DO35
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5736B 1N5736B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 10V 500MW DO204AH
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5737B 1N5737B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 11V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5738B 1N5738B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5738C 1N5738C Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 12V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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1N5738D 1N5738D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 12V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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1N5739B 1N5739B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 13V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5740B 1N5740B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5741B 1N5741B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 16V 500MW DO204AH
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 40 Ohms
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1N5741C 1N5741C Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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1N5741D 1N5741D Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 16V 500MW DO35
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1N5742B 1N5742B Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 18V 500MW DO204AH
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 45 Ohms
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1N5742C 1N5742C Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 18V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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1N5742D 1N5742D Microchip Technology 1N5728B_1N5757B-1.pdf Description: DIODE ZENER 18V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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1N5538B 123956-lds-0037-1-datasheet
1N5538B
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 105 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5539B 123956-lds-0037-1-datasheet
1N5539B
Hersteller: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
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1N5542B 123956-lds-0037-1-datasheet
1N5542B
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 21.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 109 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5546B 123956-lds-0037-1-datasheet
1N5546B
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 113 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Produkt ist nicht verfügbar
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1N5550US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5550US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 23 Stücke:
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AnzahlPrivatkunde
2+20.55 EUR
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1N5551US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5551US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.86 EUR
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1N5552US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5552US
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.55 EUR
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1N5553US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5553US
Hersteller: Microchip Technology
Description: DIODE STANDARD 800V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5554US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
1N5554US
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N5555 lds-0094.pdf
1N5555
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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1N5556 lds-0094.pdf
1N5556
Hersteller: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N5614 11061-sd46a-datasheet
1N5614
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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100+6.97 EUR
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1N5614US 10967-sa7-45-datasheet
1N5614US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
1N5615
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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3+8 EUR
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1N5615US 11062-sd47a-datasheet
1N5615US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A D5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5616 11061-sd46a-datasheet
1N5616
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Package / Case: A, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
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1N5616US 10967-sa7-45-datasheet
1N5616US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
auf Bestellung 138 Stücke:
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1N5617 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
1N5617
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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1N5617US SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf
1N5617US
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 1A D5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
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2+11.27 EUR
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1N5618 11061-sd46a-datasheet
1N5618
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5618US 10967-sa7-45-datasheet
1N5618US
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5619 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
1N5619
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
auf Bestellung 143 Stücke:
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3+8.98 EUR
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1N5619US SD47A%2C+1N5615US+thru+1N5623US%2C+MIL-PRF-19500-429.pdf
1N5619US
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
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1N5620 10968-sa7-47-datasheet
1N5620
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 1A AXIAL
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
auf Bestellung 322 Stücke:
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3+8.23 EUR
100+7.65 EUR
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1N5620US 10967-sa7-45-datasheet
1N5620US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 1A D5A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5622 11061-sd46a-datasheet
1N5622
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Produkt ist nicht verfügbar
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1N5728B 1N5728B_1N5757B-1.pdf
1N5728B
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO204AH
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5728C 10921-sa5-55-datasheet
1N5728C
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5728D 1N5728B_1N5757B-1.pdf
1N5728D
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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1N5729B 10921-sa5-55-datasheet
1N5729B
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5729C 10921-sa5-55-datasheet
1N5729C
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5729D 10921-sa5-55-datasheet
1N5729D
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5730B 1N5728B_1N5757B-1.pdf
1N5730B
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO204AH
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5730C 10921-sa5-55-datasheet
1N5730C
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
Produkt ist nicht verfügbar
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1N5730D 10921-sa5-55-datasheet
1N5730D
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
Produkt ist nicht verfügbar
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1N5731B 1N5728B_1N5757B-1.pdf
1N5731B
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Produkt ist nicht verfügbar
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1N5731C 10921-sa5-55-datasheet
1N5731C
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Produkt ist nicht verfügbar
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1N5731D 10921-sa5-55-datasheet
1N5731D
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Produkt ist nicht verfügbar
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1N5732B 1N5728B_1N5757B-1.pdf
1N5732B
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Produkt ist nicht verfügbar
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1N5732C 10921-sa5-55-datasheet
1N5732C
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO35
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1N5732D 10921-sa5-55-datasheet
1N5732D
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO35
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1N5733B 1N5728B_1N5757B-1.pdf
1N5733B
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO204AH
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5733C 10921-sa5-55-datasheet
1N5733C
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO35
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1N5734B 1N5728B_1N5757B-1.pdf
1N5734B
Hersteller: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO204AH
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
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1N5735B 1N5728B_1N5757B-1.pdf
1N5735B
Hersteller: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO204AH
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5735C 10921-sa5-55-datasheet
1N5735C
Hersteller: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Produkt ist nicht verfügbar
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1N5735D 10921-sa5-55-datasheet
1N5735D
Hersteller: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO35
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5736B 1N5728B_1N5757B-1.pdf
1N5736B
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO204AH
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5737B 1N5728B_1N5757B-1.pdf
1N5737B
Hersteller: Microchip Technology
Description: DIODE ZENER 11V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5738B 1N5728B_1N5757B-1.pdf
1N5738B
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5738C 10921-sa5-55-datasheet
1N5738C
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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1N5738D 10921-sa5-55-datasheet
1N5738D
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5739B 1N5728B_1N5757B-1.pdf
1N5739B
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5740B 1N5728B_1N5757B-1.pdf
1N5740B
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5741B 1N5728B_1N5757B-1.pdf
1N5741B
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO204AH
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 40 Ohms
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1N5741C 1N5728B_1N5757B-1.pdf
1N5741C
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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1N5741D 10921-sa5-55-datasheet
1N5741D
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
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1N5742B 1N5728B_1N5757B-1.pdf
1N5742B
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO204AH
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 45 Ohms
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1N5742C 1N5728B_1N5757B-1.pdf
1N5742C
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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1N5742D 1N5728B_1N5757B-1.pdf
1N5742D
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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