Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (282791) > Seite 865 nach 4714
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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2N2906AUB | Microchip Technology |
 Description: TRANS PNP 60V 0.6A UBPackaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N2907AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 213 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| 2N2946A | Microchip Technology |
Description: TRANS PNP 35V 0.1A TO46-3 Packaging: Bulk Package / Case: TO-46-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV Supplier Device Package: TO-46-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 400 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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2N3019S | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N3057A | Microchip Technology |
Description: TRANS NPN 80V 1A TO46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-46-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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2N3439L | Microchip Technology |
Description: TRANS NPN 350V 1A TO5 Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 1 A Part Status: Discontinued at Digi-Key Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3439UA | Microchip Technology |
Description: TRANS NPN 350V 1A Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 1 A Part Status: Active DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3440L | Microchip Technology |
Description: TRANS NPN 250V 1A TO-5 Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3501L | Microchip Technology |
Description: TRANS NPN 150V 0.3A TO-5 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3700UB | Microchip Technology |
Description: TRANS NPN 80V 1A UB Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN |
auf Bestellung 525 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3735 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO39 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3735L | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO-5 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO-46-3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: TO-46-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3737UB | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N3810 | Microchip Technology |
Description: TRANS 2PNP 60V 50MA TO-78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 Part Status: Active |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N3810L | Microchip Technology |
Description: TRANS 2PNP 60V 0.05A TO-78 Supplier Device Package: TO-78-6 DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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2N3810U | Microchip Technology |
Description: TRANS 2PNP 60V 50MA TO-78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| 2N3838 | Microchip Technology |
Description: TRANS NPN/PNP 40V 0.6A 6 PFLTPK Packaging: Bulk Package / Case: 6-FlatPack Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-FlatPack Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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2N4029 | Microchip Technology |
Description: TRANS PNP 80V 1A TO18 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 101 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N5582 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-46-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 114 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N6987 | Microchip Technology |
Description: TRANS 4PNP 60V 0.6A TO116 Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1.5W Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-116 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N6988 | Microchip Technology |
Description: TRANS 4PNP 60V 0.6A 14FLATPACK Packaging: Bulk Package / Case: 14-Flatpack Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 14-Flatpack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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2N6989 | Microchip Technology |
Description: TRANS 4NPN 50V 0.8A TO116 Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 4 NPN (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1.5W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-116 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| 2N918UB | Microchip Technology |
Description: TRANS NPN 15V 0.05A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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2N930 | Microchip Technology |
Description: TRANS NPN 45V 0.03A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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BZV55C30 | Microchip Technology |
Description: DIODE ZENER 30V DO213AA Tolerance: ±7% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Supplier Device Package: DO-213AA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 21 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 323 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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BZV55C43 | Microchip Technology |
Description: DIODE ZENER 43V DO213AA Tolerance: ±7% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 43 V Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 323 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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BZV55C51 | Microchip Technology |
Description: DIODE ZENER 51V DO213AA Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Part Status: Active Supplier Device Package: DO-213AA Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA Tolerance: ±6% Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 323 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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BZV55C56 | Microchip Technology |
Description: DIODE ZENER 56V DO213AA Tolerance: ±7% Packaging: Bulk Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Part Status: Active Supplier Device Package: DO-213AA Voltage - Zener (Nom) (Vz): 56 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 323 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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BZV55C5V6 | Microchip Technology |
Description: DIODE ZENER 5.6V DO213AA Packaging: Bulk Tolerance: ±7% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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BZV55C62 | Microchip Technology |
Description: DIODE ZENER 62V DO213AA Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Part Status: Active Supplier Device Package: DO-213AA Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA Tolerance: ±6% Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 323 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB0.5A40 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 500MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 60pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB1A30 | Microchip Technology |
Description: DIODE SCHOTTKY 30V 1A DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB1A60 | Microchip Technology |
Description: DIODE SCHOTTKY 60V 1A DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB2810 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 75MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 75mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB5712 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 75MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 75mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Current - Reverse Leakage @ Vr: 150 µA @ 16 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| DSB5817 | Microchip Technology |
Description: DIODE SCHOTTKY DO-41 Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
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DSB5818 | Microchip Technology |
Description: DIODE SCHOTTKY 30V 1A DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB5820 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A DO204AH Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB5821 | Microchip Technology |
Description: DIODE SCHOTTKY 30V 3A DO204AH Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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DSB5822 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 3A DO204AH Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ICT-15C | Microchip Technology |
Description: TVS DIODE 15VWM 21.4VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 60A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.6V Voltage - Clamping (Max) @ Ipp: 21.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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| LC100A | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-13 (DO-202AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| LC10A | Microchip Technology |
Description: TVS DIODE 10V 17V DO202AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| LC14A | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 65A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-13 (DO-202AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| LC48 | Microchip Technology |
Description: TVS DIODE 48VWM 85.5VC DO202AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| LC48A | Microchip Technology |
Description: TVS DIODE 48VWM 77.4VC DO202AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| LC51 | Microchip Technology |
Description: TVS DIODE 51VWM 91.1VC DO202AA Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 16.5A Voltage - Reverse Standoff (Typ): 51V Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 91.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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LC51A | Microchip Technology |
Description: TVS DIODE 51VWM 82.4VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 18.2A Voltage - Reverse Standoff (Typ): 51V Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Supplier Device Package: DO-13 (DO-202AA) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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LC60 | Microchip Technology |
Description: TVS DIODE 60VWM 107VC DO202AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| LC60A | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC DO202AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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LSM145 MELF | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Package / Case: DO-213AB, MELF (Glass) Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
 |
TVS310 | Microchip Technology |
Description: TVS DIODE 10VWM 16.8VC AXIAL Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 16.8V Voltage - Breakdown (Min): 11.1V Unidirectional Channels: 1 Supplier Device Package: A, Axial Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 8.9A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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TVS310SM | Microchip Technology |
Description: TVS DIODE 10VWM 16.8VC A-MELF Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 8.9A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 16.8V Voltage - Breakdown (Min): 11.1V Unidirectional Channels: 1 Supplier Device Package: A-MELF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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TVS324 | Microchip Technology |
Description: TVS DIODE 24VWM 42VC AXIAL Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 42V Voltage - Breakdown (Min): 28.4V Unidirectional Channels: 1 Supplier Device Package: A, Axial Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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TVS324SM | Microchip Technology |
Description: TVS DIODE 24VWM 42VC A-MELF Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 42V Voltage - Breakdown (Min): 28.4V Unidirectional Channels: 1 Supplier Device Package: A-MELF Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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TVS328 | Microchip Technology |
Description: TVS DIODE 28VWM 46VC AXIAL Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 46V Voltage - Breakdown (Min): 30.7V Unidirectional Channels: 1 Supplier Device Package: A, Axial Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 3.2A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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TVS328SM | Microchip Technology |
Description: TVS DIODE 28VWM 46VC A-MELF Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 46V Voltage - Breakdown (Min): 30.7V Unidirectional Channels: 1 Supplier Device Package: A-MELF Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 3.2A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| TVS518 | Microchip Technology |
Description: TVS DIODE 18V 30.5V AXIAL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
 |
TVS528 | Microchip Technology |
Description: TVS DIODE 28VWM 46.5V AXIAL Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 46.5V Voltage - Breakdown (Min): 30.7V Unidirectional Channels: 1 Supplier Device Package: B, Axial Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 10.7A (8/20µs) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N2906AUB |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2907AL |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 213 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2946A |
|
Hersteller: Microchip Technology
Description: TRANS PNP 35V 0.1A TO46-3
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
Description: TRANS PNP 35V 0.1A TO46-3
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3019S |
|
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.06 EUR |
| 2N3057A |
|
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3439L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3439UA |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: TRANS NPN 350V 1A
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3440L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO-5
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Description: TRANS NPN 250V 1A TO-5
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3501L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 150V 0.3A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3700UB |
|
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A UB
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Description: TRANS NPN 80V 1A UB
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
auf Bestellung 525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.24 EUR |
| 100+ | 16.93 EUR |
| 2N3735 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 40V 1.5A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N3735L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 40V 1.5A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| 2N3737 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 40V 1.5A TO-46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N3737UB |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Description: TRANS NPN 40V 1.5A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N3810 |
|
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Part Status: Active
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.35 EUR |
| 2N3810L |
|
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO-78
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Description: TRANS 2PNP 60V 0.05A TO-78
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N3810U |
|
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Part Status: Active
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3838 |
|
Hersteller: Microchip Technology
Description: TRANS NPN/PNP 40V 0.6A 6 PFLTPK
Packaging: Bulk
Package / Case: 6-FlatPack
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-FlatPack
Part Status: Active
Description: TRANS NPN/PNP 40V 0.6A 6 PFLTPK
Packaging: Bulk
Package / Case: 6-FlatPack
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-FlatPack
Part Status: Active
Produkt ist nicht verfügbar
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| 2N4029 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A TO18
Description: TRANS PNP 80V 1A TO18
Produkt ist nicht verfügbar
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| 2N5582 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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| 2N6987 |
|
Hersteller: Microchip Technology
Description: TRANS 4PNP 60V 0.6A TO116
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Description: TRANS 4PNP 60V 0.6A TO116
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Produkt ist nicht verfügbar
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| 2N6988 |
|
Hersteller: Microchip Technology
Description: TRANS 4PNP 60V 0.6A 14FLATPACK
Packaging: Bulk
Package / Case: 14-Flatpack
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 14-Flatpack
Description: TRANS 4PNP 60V 0.6A 14FLATPACK
Packaging: Bulk
Package / Case: 14-Flatpack
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 14-Flatpack
Produkt ist nicht verfügbar
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| 2N6989 |
|
Hersteller: Microchip Technology
Description: TRANS 4NPN 50V 0.8A TO116
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Description: TRANS 4NPN 50V 0.8A TO116
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Produkt ist nicht verfügbar
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| 2N918UB |
Hersteller: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: TRANS NPN 15V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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| 2N930 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 45V 0.03A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.03A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZV55C30 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 30V DO213AA
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Description: DIODE ZENER 30V DO213AA
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 323 Stücke
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| BZV55C43 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 43V DO213AA
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Description: DIODE ZENER 43V DO213AA
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Produkt ist nicht verfügbar
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| BZV55C51 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 51V DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±6%
Packaging: Bulk
Description: DIODE ZENER 51V DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±6%
Packaging: Bulk
Produkt ist nicht verfügbar
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| BZV55C56 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 56V DO213AA
Tolerance: ±7%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Description: DIODE ZENER 56V DO213AA
Tolerance: ±7%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Produkt ist nicht verfügbar
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| BZV55C5V6 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V DO213AA
Packaging: Bulk
Tolerance: ±7%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V DO213AA
Packaging: Bulk
Tolerance: ±7%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.24 EUR |
| 100+ | 4.88 EUR |
| BZV55C62 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 62V DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±6%
Packaging: Bulk
Description: DIODE ZENER 62V DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±6%
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 323 Stücke
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| DSB0.5A40 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 500MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB1A30 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSB1A60 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 60V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Description: DIODE SCHOTTKY 60V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB2810 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 75MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE SCHOTTKY 20V 75MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB5712 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 75MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 µA @ 16 V
Description: DIODE SCHOTTKY 20V 75MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 µA @ 16 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSB5818 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB5820 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A DO204AH
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DO204AH
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB5821 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 3A DO204AH
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A DO204AH
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB5822 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A DO204AH
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO204AH
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICT-15C |
|
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 21.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 21.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 21.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 21.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.65 EUR |
| 100+ | 33.08 EUR |
| LC100A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 100VWM 162VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| LC10A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10V 17V DO202AA
Description: TVS DIODE 10V 17V DO202AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| LC14A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| LC48 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 48VWM 85.5VC DO202AA
Description: TVS DIODE 48VWM 85.5VC DO202AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| LC48A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC DO202AA
Description: TVS DIODE 48VWM 77.4VC DO202AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| LC51 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 91.1VC DO202AA
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 91.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 51VWM 91.1VC DO202AA
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 91.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| LC51A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Supplier Device Package: DO-13 (DO-202AA)
Description: TVS DIODE 51VWM 82.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Supplier Device Package: DO-13 (DO-202AA)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| LC60 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 60VWM 107VC DO202AA
Description: TVS DIODE 60VWM 107VC DO202AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| LC60A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO202AA
Description: TVS DIODE 60VWM 96.8VC DO202AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| LSM145 MELF |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Package / Case: DO-213AB, MELF (Glass)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 45V 1A DO213AB
Package / Case: DO-213AB, MELF (Glass)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TVS310 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 16.8VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 16.8V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: A, Axial
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 8.9A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: TVS DIODE 10VWM 16.8VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 16.8V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: A, Axial
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 8.9A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| TVS310SM |
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 16.8VC A-MELF
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 8.9A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 16.8V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: A-MELF
Description: TVS DIODE 10VWM 16.8VC A-MELF
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 8.9A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 16.8V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: A-MELF
Produkt ist nicht verfügbar
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| TVS324 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 42V
Voltage - Breakdown (Min): 28.4V
Unidirectional Channels: 1
Supplier Device Package: A, Axial
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: TVS DIODE 24VWM 42VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 42V
Voltage - Breakdown (Min): 28.4V
Unidirectional Channels: 1
Supplier Device Package: A, Axial
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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| TVS324SM |
|
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC A-MELF
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 42V
Voltage - Breakdown (Min): 28.4V
Unidirectional Channels: 1
Supplier Device Package: A-MELF
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: TVS DIODE 24VWM 42VC A-MELF
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 42V
Voltage - Breakdown (Min): 28.4V
Unidirectional Channels: 1
Supplier Device Package: A-MELF
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| TVS328 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 46VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 46V
Voltage - Breakdown (Min): 30.7V
Unidirectional Channels: 1
Supplier Device Package: A, Axial
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 3.2A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: TVS DIODE 28VWM 46VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 46V
Voltage - Breakdown (Min): 30.7V
Unidirectional Channels: 1
Supplier Device Package: A, Axial
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 3.2A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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| TVS328SM |
|
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 46VC A-MELF
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 46V
Voltage - Breakdown (Min): 30.7V
Unidirectional Channels: 1
Supplier Device Package: A-MELF
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 3.2A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: TVS DIODE 28VWM 46VC A-MELF
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 46V
Voltage - Breakdown (Min): 30.7V
Unidirectional Channels: 1
Supplier Device Package: A-MELF
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 3.2A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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| TVS518 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 18V 30.5V AXIAL
Description: TVS DIODE 18V 30.5V AXIAL
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| TVS528 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 46.5V AXIAL
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 46.5V
Voltage - Breakdown (Min): 30.7V
Unidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 10.7A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Description: TVS DIODE 28VWM 46.5V AXIAL
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 46.5V
Voltage - Breakdown (Min): 30.7V
Unidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 10.7A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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