JANS2N3637 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS PNP 175V 1A TO-39
Qualification: MIL-PRF-19500/357
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Grade: Military
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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Technische Details JANS2N3637 Microchip Technology
Description: TRANS PNP 175V 1A TO-39, Qualification: MIL-PRF-19500/357, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 175 V, Current - Collector (Ic) (Max): 1 A, Grade: Military, Supplier Device Package: TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JANS2N3637 nach Preis ab 120.05 EUR bis 129.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANS2N3637 | Microchip / Microsemi |
Bipolar Transistors - BJT 175V 1A 1W Small-Signal BJT THT |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| JANS2N3637 |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 175V 1A 1W Small-Signal BJT THT
Bipolar Transistors - BJT 175V 1A 1W Small-Signal BJT THT
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 129.27 EUR |
| 10+ | 129.25 EUR |
| 25+ | 129.1 EUR |
| 100+ | 120.05 EUR |