Suchergebnisse für "SSM6J502NU" : 6
Art der Ansicht :
Mindestbestellmenge: 4
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SSM6J502NU,LF | Toshiba |
 MOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS |
auf Bestellung 3065 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6J502NU | Toshiba | MOSFETs |
Produkt ist nicht verfügbar |
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 60.5mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 60.5mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SSM6J502NULF(T | Toshiba | MOSFETs |
Produkt ist nicht verfügbar |
| SSM6J502NU,LF |
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Hersteller: Toshiba
MOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS
MOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS
auf Bestellung 3065 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 9000+ | 0.17 EUR |
| SSM6J502NU,LF(T |
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Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SSM6J502NU,LF(T |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar