Suchergebnisse für "fp4110" : 18
Art der Ansicht :
Mindestbestellmenge: 70
Mindestbestellmenge: 2
Mindestbestellmenge: 3
Mindestbestellmenge: 3
Mindestbestellmenge: 5
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IRFP4110PBF Produktcode: 40699 |
IR |
 Transistoren > MOSFET N-CHGehäuse: TO-247AC Uds,V: 100 Idd,A: 120 Rds(on), Ohm: 3.7mOhm Ciss, pF/Qg, nC: 9620/150 JHGF: THT |
auf Bestellung 73 Stück: Lieferzeit 21-28 Tag (e) |
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AUIRFP4110 | International Rectifier |
Description: MOSFET N-CH 100V 120A TO247AC Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 15348 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFP4110 | Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBF | Infineon Technologies |
MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg |
auf Bestellung 1452 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 2045 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBF | Infineon Technologies |
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4110PBFXKMA1 | Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 1226 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFP4110PBFXKMA1 | Infineon Technologies |
SP005732688 |
auf Bestellung 3859 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFP4110XKMA1 | International Rectifier |
Tranzystor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 128 Stücke: Lieferzeit 7-14 Tag (e) |
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| Транзистор польовий IRFP4110PBF 120А 100V N-ch TO-247 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFP4110 | Infineon Technologies |
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(3+Tab) TO-247AC Tube |
Produkt ist nicht verfügbar |
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AUIRFP4110 | Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
Produkt ist nicht verfügbar |
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C44ARFP4110ZA0J | KEMET |
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL Tolerance: ±5% Packaging: Bulk Package / Case: Radial, Can Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 85°C Applications: General Purpose Termination: Threaded, Male Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - DC: 1400V (1.4kV) Capacitance: 1.1 µF |
Produkt ist nicht verfügbar |
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C44ARFP4110ZA0J | KEMET |
Film Capacitors 1.4 kVDC 1.1 uF 5% |
Produkt ist nicht verfügbar |
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IRFP4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFP4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| IRFP4110PBF Produktcode: 40699 |
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 100
Idd,A: 120
Rds(on), Ohm: 3.7mOhm
Ciss, pF/Qg, nC: 9620/150
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 100
Idd,A: 120
Rds(on), Ohm: 3.7mOhm
Ciss, pF/Qg, nC: 9620/150
JHGF: THT
auf Bestellung 73 Stück:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.32 EUR |
| 10+ | 2.1 EUR |
| AUIRFP4110 |
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Hersteller: International Rectifier
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 15348 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 7.17 EUR |
| AUIRFP4110 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 11.92 EUR |
| 25+ | 9.51 EUR |
| 100+ | 8.51 EUR |
| IRFP4110PBF |
|
Hersteller: Infineon Technologies
MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg
MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg
auf Bestellung 1452 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.73 EUR |
| 10+ | 7.52 EUR |
| 25+ | 5.54 EUR |
| 100+ | 4.8 EUR |
| 250+ | 4.79 EUR |
| 400+ | 3.85 EUR |
| 1200+ | 3.77 EUR |
| IRFP4110PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 2045 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.8 EUR |
| 25+ | 6.18 EUR |
| 100+ | 5.3 EUR |
| 500+ | 4.71 EUR |
| 1000+ | 4.03 EUR |
| 2000+ | 3.79 EUR |
| IRFP4110PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| IRFP4110PBFXKMA1 |
|
Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
MOSFET TRENCH >=100V
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.74 EUR |
| 10+ | 6.51 EUR |
| 25+ | 6.14 EUR |
| 100+ | 5.26 EUR |
| 250+ | 4.98 EUR |
| 400+ | 4.66 EUR |
| 1200+ | 4 EUR |
| IRFP4110PBFXKMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1226 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.8 EUR |
| 25+ | 6.18 EUR |
| 100+ | 5.3 EUR |
| 500+ | 4.71 EUR |
| 1000+ | 4.03 EUR |
| IRFP4110PBFXKMA1 |
|
Hersteller: Infineon Technologies
SP005732688
SP005732688
auf Bestellung 3859 Stücke:
Lieferzeit 14-21 Tag (e)| IRFP4110XKMA1 |
Hersteller: International Rectifier
Tranzystor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110
Anzahl je Verpackung: 5 Stücke
Tranzystor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110
Anzahl je Verpackung: 5 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 13.05 EUR |
| Транзистор польовий IRFP4110PBF 120А 100V N-ch TO-247 |
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| AUIRFP4110 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(3+Tab) TO-247AC Tube
Produkt ist nicht verfügbar
| C44ARFP4110ZA0J |
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Hersteller: KEMET
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 1400V (1.4kV)
Capacitance: 1.1 µF
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 1400V (1.4kV)
Capacitance: 1.1 µF
Produkt ist nicht verfügbar
| IRFP4110PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFP4110PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar