Suchergebnisse für "fp4110" : 15
Art der Ansicht :
Mindestbestellmenge: 70
Mindestbestellmenge: 2
Mindestbestellmenge: 13
Mindestbestellmenge: 2
Mindestbestellmenge: 2
Mindestbestellmenge: 5
Mindestbestellmenge: 13
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFP4110PBF Produktcode: 40699 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-247AC Uds,V: 100 Idd,A: 120 Rds(on), Ohm: 3.7mOhm Ciss, pF/Qg, nC: 9620/150 JHGF: THT |
erwartet:
100 Stück
100 Stück - erwartet 22.09.2024
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AUIRFP4110 | International Rectifier |
Description: MOSFET N-CH 100V 120A TO247AC Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 14894 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFP4110 | Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4110PBF | Infineon Technologies | MOSFETs MOSFT 100V 168A 4.6mOhm 152nC Qg |
auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 1275 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBFXKMA1 | Infineon Technologies | MOSFETs Y |
auf Bestellung 1346 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
auf Bestellung 981 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP4110XKMA1 | International Rectifier |
Transistor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 128 Stücke: Lieferzeit 7-14 Tag (e) |
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Транзистор польовий IRFP4110PBF 120А 100V N-ch TO-247 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFP4110 | Infineon Technologies | MOSFETs Y |
Produkt ist nicht verfügbar |
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C44ARFP4110ZA0J | KEMET |
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL Tolerance: ±5% Packaging: Bulk Package / Case: Radial, Can Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 85°C Applications: General Purpose Termination: Threaded, Male Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - DC: 1400V (1.4kV) Capacitance: 1.1 µF |
Produkt ist nicht verfügbar |
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C44ARFP4110ZA0J | KEMET | Film Capacitors 1.4 kVDC 1.1 uF 5% |
Produkt ist nicht verfügbar |
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IRFP4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 398 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP4110PBF Produktcode: 40699 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 100
Idd,A: 120
Rds(on), Ohm: 3.7mOhm
Ciss, pF/Qg, nC: 9620/150
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 100
Idd,A: 120
Rds(on), Ohm: 3.7mOhm
Ciss, pF/Qg, nC: 9620/150
JHGF: THT
erwartet:
100 Stück
100 Stück - erwartet 22.09.2024
Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.32 EUR |
10+ | 2.1 EUR |
AUIRFP4110 |
Hersteller: International Rectifier
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 14894 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 6.88 EUR |
AUIRFP4110 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.45 EUR |
25+ | 5.95 EUR |
IRFP4110PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.78 EUR |
24+ | 3.06 EUR |
25+ | 2.9 EUR |
IRFP4110PBF |
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 168A 4.6mOhm 152nC Qg
MOSFETs MOSFT 100V 168A 4.6mOhm 152nC Qg
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.99 EUR |
10+ | 6.71 EUR |
25+ | 6.34 EUR |
100+ | 5.42 EUR |
250+ | 5.12 EUR |
400+ | 4.8 EUR |
1200+ | 4.12 EUR |
IRFP4110PBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.99 EUR |
25+ | 5.24 EUR |
100+ | 4.34 EUR |
500+ | 3.61 EUR |
IRFP4110PBFXKMA1 |
Hersteller: Infineon Technologies
MOSFETs Y
MOSFETs Y
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.64 EUR |
10+ | 6.32 EUR |
100+ | 4.56 EUR |
400+ | 3.89 EUR |
IRFP4110PBFXKMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.99 EUR |
25+ | 5.24 EUR |
100+ | 4.34 EUR |
500+ | 3.61 EUR |
IRFP4110XKMA1 |
Hersteller: International Rectifier
Transistor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110
Anzahl je Verpackung: 5 Stücke
Transistor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110
Anzahl je Verpackung: 5 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.29 EUR |
Транзистор польовий IRFP4110PBF 120А 100V N-ch TO-247 |
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)C44ARFP4110ZA0J |
Hersteller: KEMET
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 1400V (1.4kV)
Capacitance: 1.1 µF
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 1400V (1.4kV)
Capacitance: 1.1 µF
Produkt ist nicht verfügbar
IRFP4110PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 398 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.78 EUR |
24+ | 3.06 EUR |
25+ | 2.9 EUR |
400+ | 2.87 EUR |