Suchergebnisse für "fp4110" : 15

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IRFP4110PBF IRFP4110PBF
Produktcode: 40699 		IR irfp4110pbf.pdf?fileId=5546d462533600a4015356290ec51ffe Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 100
Idd,A: 120
Rds(on), Ohm: 3.7mOhm
Ciss, pF/Qg, nC: 9620/150
JHGF: THT
erwartet: 100 Stück
100 Stück - erwartet 22.09.2024
1+2.32 EUR
10+ 2.1 EUR
AUIRFP4110 AUIRFP4110 International Rectifier Infineon-AUIRFP4110-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355b1c0271452 Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 14894 Stücke:
Lieferzeit 10-14 Tag (e)
70+6.88 EUR
Mindestbestellmenge: 70
AUIRFP4110 AUIRFP4110 Infineon Technologies auirfp4110.pdf?fileId=5546d462533600a4015355b1c0271452 Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.45 EUR
25+ 5.95 EUR
Mindestbestellmenge: 2
IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES irfp4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.78 EUR
24+ 3.06 EUR
25+ 2.9 EUR
Mindestbestellmenge: 13
IRFP4110PBF IRFP4110PBF Infineon Technologies Infineon_IRFP4110_DataSheet_v01_01_EN-3007052.pdf MOSFETs MOSFT 100V 168A 4.6mOhm 152nC Qg
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.99 EUR
10+ 6.71 EUR
25+ 6.34 EUR
100+ 5.42 EUR
250+ 5.12 EUR
400+ 4.8 EUR
1200+ 4.12 EUR
IRFP4110PBF IRFP4110PBF Infineon Technologies irfp4110pbf.pdf?fileId=5546d462533600a4015356290ec51ffe Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.99 EUR
25+ 5.24 EUR
100+ 4.34 EUR
500+ 3.61 EUR
Mindestbestellmenge: 2
IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 Infineon Technologies Infineon_IRFP4110_DataSheet_v01_01_EN-3007052.pdf MOSFETs Y
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.64 EUR
10+ 6.32 EUR
100+ 4.56 EUR
400+ 3.89 EUR
IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 Infineon Technologies Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.99 EUR
25+ 5.24 EUR
100+ 4.34 EUR
500+ 3.61 EUR
Mindestbestellmenge: 2
IRFP4110XKMA1 International Rectifier Transistor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110
Anzahl je Verpackung: 5 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
5+12.29 EUR
Mindestbestellmenge: 5
Транзистор польовий IRFP4110PBF 120А 100V N-ch TO-247
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AUIRFP4110 AUIRFP4110 Infineon Technologies Infineon_AUIRFP4110_DS_v01_02_EN-1730884.pdf MOSFETs Y
Produkt ist nicht verfügbar
C44ARFP4110ZA0J C44ARFP4110ZA0J KEMET F3303_C44A.pdf Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 1400V (1.4kV)
Capacitance: 1.1 µF
Produkt ist nicht verfügbar
C44ARFP4110ZA0J C44ARFP4110ZA0J KEMET F3303_C44A-3316247.pdf Film Capacitors 1.4 kVDC 1.1 uF 5%
Produkt ist nicht verfügbar
IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES irfp4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 398 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.78 EUR
24+ 3.06 EUR
25+ 2.9 EUR
400+ 2.87 EUR
Mindestbestellmenge: 13
IRFP4110PBF
Produktcode: 40699		 irfp4110pbf.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 100
Idd,A: 120
Rds(on), Ohm: 3.7mOhm
Ciss, pF/Qg, nC: 9620/150
JHGF: THT
erwartet: 100 Stück
100 Stück - erwartet 22.09.2024
Anzahl Preis ohne MwSt
1+2.32 EUR
10+ 2.1 EUR
AUIRFP4110 Infineon-AUIRFP4110-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355b1c0271452
AUIRFP4110
Hersteller: International Rectifier
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 14894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
70+6.88 EUR
Mindestbestellmenge: 70
AUIRFP4110 auirfp4110.pdf?fileId=5546d462533600a4015355b1c0271452
AUIRFP4110
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.45 EUR
25+ 5.95 EUR
Mindestbestellmenge: 2
IRFP4110PBF irfp4110pbf.pdf
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.78 EUR
24+ 3.06 EUR
25+ 2.9 EUR
Mindestbestellmenge: 13
IRFP4110PBF Infineon_IRFP4110_DataSheet_v01_01_EN-3007052.pdf
IRFP4110PBF
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 168A 4.6mOhm 152nC Qg
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.99 EUR
10+ 6.71 EUR
25+ 6.34 EUR
100+ 5.42 EUR
250+ 5.12 EUR
400+ 4.8 EUR
1200+ 4.12 EUR
IRFP4110PBF irfp4110pbf.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.99 EUR
25+ 5.24 EUR
100+ 4.34 EUR
500+ 3.61 EUR
Mindestbestellmenge: 2
IRFP4110PBFXKMA1 Infineon_IRFP4110_DataSheet_v01_01_EN-3007052.pdf
IRFP4110PBFXKMA1
Hersteller: Infineon Technologies
MOSFETs Y
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.64 EUR
10+ 6.32 EUR
100+ 4.56 EUR
400+ 3.89 EUR
IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.99 EUR
25+ 5.24 EUR
100+ 4.34 EUR
500+ 3.61 EUR
Mindestbestellmenge: 2
IRFP4110XKMA1
Hersteller: International Rectifier
Transistor N-MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFP4110; IRFP4110XKMA1; IRFP4110 TIRFP4110
Anzahl je Verpackung: 5 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+12.29 EUR
Mindestbestellmenge: 5
Транзистор польовий IRFP4110PBF 120А 100V N-ch TO-247
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AUIRFP4110 Infineon_AUIRFP4110_DS_v01_02_EN-1730884.pdf
AUIRFP4110
Hersteller: Infineon Technologies
MOSFETs Y
Produkt ist nicht verfügbar
C44ARFP4110ZA0J F3303_C44A.pdf
C44ARFP4110ZA0J
Hersteller: KEMET
Description: CAP FILM 1.1UF 5% 1.4KVDC RADIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 1400V (1.4kV)
Capacitance: 1.1 µF
Produkt ist nicht verfügbar
C44ARFP4110ZA0J F3303_C44A-3316247.pdf
C44ARFP4110ZA0J
Hersteller: KEMET
Film Capacitors 1.4 kVDC 1.1 uF 5%
Produkt ist nicht verfügbar
IRFP4110PBF irfp4110pbf.pdf
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 398 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.78 EUR
24+ 3.06 EUR
25+ 2.9 EUR
400+ 2.87 EUR
Mindestbestellmenge: 13