Produkte > RJK
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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| RJK60S4DPE-00#J3 | Renesas Electronics America | Description: MOSFET N-CH 600V 16A LDPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJK60S4DPE-00#J3 | Renesas Electronics America | Description: MOSFET N-CH 600V 16A LDPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJK60S4DPE-WS#J3 | Renesas Electronics Corporation | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S4DPP-E0#T2 | Renesas Electronics Corporation | Description: MOSFET N-CH 600V 16A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V Power Dissipation (Max): 29.9W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V | auf Bestellung 114548 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S5DPE-00#J3 | Renesas Electronics Corporation | Description: MOSFET N-CH 600V 20A 4LDPAK Packaging: Bulk Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V Power Dissipation (Max): 125W (Tc) Supplier Device Package: LDPAK Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S5DPK-M0#T0 | Renesas Electronics Corporation | Description: MOSFET N-CH 600V 20A TO3PSG Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V Supplier Device Package: TO-3PSG Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | auf Bestellung 69897 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S5DPN-00#T2 | Renesas Electronics Corporation | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 138686 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S5DPN-E0#T2 | Renesas Electronics America | Description: MOSFET N-CH 600V 20A TO-220AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJK60S5DPP-E0#T2 | Renesas Electronics Corporation | Description: MOSFET N-CH 600V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V Power Dissipation (Max): 33.7W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S5DPQ-E0#T2 | Renesas Electronics America | Description: MOSFET N-CH 600V 20A TO-247 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJK60S7DPK-M0#T0 | Renesas Electronics Corporation | Description: MOSFET N-CH 600V 30A TO3PSG Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 227.2W (Tc) Supplier Device Package: TO-3PSG Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +30V, -20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S7DPP-E0#T2 | Renesas Electronics Corporation | Description: N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 34.7W (Tc) Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +30V, -20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | auf Bestellung 46800 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK60S7DPP-E0#T2 | Renesas Electronics Corporation | Description: MOSFET N-CH 600V 30A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 34.7W (Tc) Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +30V, -20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJK60S7DPQ-E0#T2 | Renesas Electronics America | Description: MOSFET N-CH 600V 30A TO-247 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJK60S8DPK-M0#T0 | Renesas Electronics America | Description: MOSFET N-CH 600V 55A TO3PSG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| RJKST11L | auf Bestellung 99 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |