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| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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| G04P10HE | Goford Semiconductor | Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 1.2W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V | auf Bestellung 14979 Stücke: Lieferzeit 10-14 Tag (e) |
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| G04P10HE | Goford Semiconductor | Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 1.2W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G04P10HE | Goford Semiconductor | Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G04P10HE | GOFORD Semiconductor | P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223 | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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