Produkte > DI5

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DI5024IFM ELECTRONICCategory: Measurement Sensors
Description: Sensor: inductive; rotational speed; Range: 10mm; PNP/NPN NO/NC
Body material: brass
Kind of forehead: embedded
Type of sensor: inductive
IP rating: IP65; IP67
Connection: M12
Switch housing: M30x1,5
Output configuration: PNP/NPN NO/NC
Kind of sensor: rotational speed
Operating temperature: -25...80°C
Range: 10mm
Overall length: 92.3mm
Number of pins: 3
Supply voltage: 10...36V DC
Resolution: 3600imp/revol.
Produkt ist nicht verfügbar
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DI514PIIXYS09+
auf Bestellung 91 Stücke:
Lieferzeit 21-28 Tag (e)
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DI514SIAIXYS09+
auf Bestellung 297 Stücke:
Lieferzeit 21-28 Tag (e)
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DI5315-02FDiotec SemiconductorESD Protection Diodes / TVS Diodes ESD Diode, DFN1006-3, 150C, 60W, Unidir
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+0.42 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
2500+0.18 EUR
10000+0.099 EUR
Mindestbestellmenge: 5
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DI5315-02FDIOTEC SEMICONDUCTORCategory: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷9V; 3A; 60W; DFN1006-3,SOT883; Ch: 2; ESD
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Max. forward impulse current: 3A
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6.5...9V
Peak pulse power dissipation: 60W
Produkt ist nicht verfügbar
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DI5315-02FDiotec SemiconductorDescription: TVS DIODE 5VWM 21VC DFN1006-3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.18 EUR
Mindestbestellmenge: 10000
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DI5A0N60D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.2A; Idm: 12A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.2A
Pulsed drain current: 12A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DI5A0N60D1-AQDiotec Semiconductor
Produkt ist nicht verfügbar
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DI5A7N65D1KDiotec SemiconductorMOSFETs DPAK, N, 650V, 5.7A, 0.43?, 150C
Produkt ist nicht verfügbar
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DI5A7N65D1KDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Produkt ist nicht verfügbar
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DI5A7N65D1KDiotec SemiconductorMOSFET, DPAK, N, 650V, 5.7A, 0.43
Produkt ist nicht verfügbar
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DI5A7N65D1KDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DI5A7N65D1K-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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DI5A7N65D1K-AQDiotec SemiconductorDescription: MOSFET, DPAK, 650V, 5.7A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+2.48 EUR
100+1.7 EUR
500+1.36 EUR
1000+1.35 EUR
Mindestbestellmenge: 5
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DI5A7N65D1K-AQDiotec SemiconductorMOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101
auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.71 EUR
10+2.41 EUR
100+1.64 EUR
500+1.35 EUR
2500+1.08 EUR
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DI5A7N65D1K-AQDiotec SemiconductorDescription: MOSFET, DPAK, 650V, 5.7A, 150C,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DI5M3x18VOGTCategory: Metal Spacers
Description: Screwed spacer sleeve; 18mm; Int.thread: M3; hexagonal; brass
Sleeve shape: hexagonal
Internal thread: M3
Plating material: nickel
Type of spacer: screwed spacer sleeve
Spanner size: 5mm
Spacer length: 18mm
Thread length: 9mm
Mechanical elements features: with internal threaded hole on both ends
Material: brass
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.38 EUR
221+0.32 EUR
Mindestbestellmenge: 186
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DI5M3x18VOGTCategory: Metal Spacers
Description: Screwed spacer sleeve; 18mm; Int.thread: M3; hexagonal; brass
Sleeve shape: hexagonal
Internal thread: M3
Plating material: nickel
Type of spacer: screwed spacer sleeve
Spanner size: 5mm
Spacer length: 18mm
Thread length: 9mm
Mechanical elements features: with internal threaded hole on both ends
Material: brass
Anzahl je Verpackung: 1 Stücke
auf Bestellung 389 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.38 EUR
221+0.32 EUR
500+0.23 EUR
2000+0.21 EUR
5000+0.2 EUR
Mindestbestellmenge: 186
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