Produkte > DI5

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DI5029IFM ELECTRONICCategory: Measurement Sensors
Description: Sensor: inductive; rotational speed; Range: 7mm; PNP/NPN NO/NC
Type of sensor: inductive
Kind of sensor: rotational speed
Supply voltage: 10...30V DC
Output configuration: PNP/NPN NO/NC
IP rating: IP66; IP67; IP68; IP69K
Connection: M12
Switch housing: M18x1
Number of pins: 3
Overall length: 60mm
Operating temperature: -40...85°C
Resolution: 24000imp/revol.
Body material: acid resistant steel
Kind of forehead: embedded
Additional functions: IO-Link
Range: 7mm
Produkt ist nicht verfügbar
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DI5030IFM ELECTRONICCategory: Measurement Sensors
Description: Sensor: inductive; rotational speed; Range: 12mm; PNP/NPN NO/NC
Type of sensor: inductive
Kind of sensor: rotational speed
Supply voltage: 10...30V DC
Output configuration: PNP/NPN NO/NC
IP rating: IP66; IP67; IP68; IP69K
Connection: M12
Switch housing: M18x1
Number of pins: 3
Overall length: 60mm
Operating temperature: -40...85°C
Resolution: 24000imp/revol.
Body material: acid resistant steel
Kind of forehead: non-embedded
Additional functions: IO-Link
Range: 12mm
Produkt ist nicht verfügbar
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DI514PIIXYS09+
auf Bestellung 91 Stücke:
Lieferzeit 21-28 Tag (e)
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DI514SIAIXYS09+
auf Bestellung 297 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DI5315-02FDiotec SemiconductorESD Protection Diodes / TVS Diodes ESD Diode, DFN1006-3, 150C, 60W, Unidir
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
12+0.24 EUR
13+0.23 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2500+0.14 EUR
10000+0.081 EUR
Mindestbestellmenge: 12
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DI5315-02FDIOTEC SEMICONDUCTORCategory: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷9V; 3A; 60W; unidirectional; Ch: 2; reel,tape
Case: DFN1006-3; SOT883
Version: ESD
Application: HDMI; USB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 5V
Breakdown voltage: 6.5...9V
Peak pulse power dissipation: 60W
Produkt ist nicht verfügbar
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DI5315-02FDiotec SemiconductorDescription: TVS DIODE 5VWM 21VC DFN1006-3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.18 EUR
Mindestbestellmenge: 10000
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DI5A0N60D1-AQDiotec Semiconductor
Produkt ist nicht verfügbar
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DI5A7N65D1KDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DI5A7N65D1KDiotec SemiconductorMOSFETs DPAK, N, 650V, 5.7A, 0.43?, 150C
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DI5A7N65D1KDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
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DI5A7N65D1K-AQDiotec SemiconductorDescription: MOSFET N-CH 650V 5.7A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.05 EUR
10+2.62 EUR
100+1.79 EUR
500+1.44 EUR
1000+1.33 EUR
Mindestbestellmenge: 5
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DI5A7N65D1K-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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DI5A7N65D1K-AQDiotec SemiconductorMOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.61 EUR
10+3.61 EUR
100+2.16 EUR
500+2.13 EUR
1000+2.08 EUR
2500+1.83 EUR
5000+1.72 EUR
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DI5A7N65D1K-AQDiotec SemiconductorDescription: MOSFET N-CH 650V 5.7A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH