Produkte > FQH

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
FQH140N10onsemiDescription: MOSFET N-CH 100V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Produkt ist nicht verfügbar
FQH18N50V2onsemi / FairchildMOSFET 500V N-Channel Adv Q-FET V2 Ser
Produkt ist nicht verfügbar
FQH18N50V2Fairchild SemiconductorDescription: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4508 Stücke:
Lieferzeit 21-28 Tag (e)
100+7.27 EUR
Mindestbestellmenge: 100
FQH18N50V2
auf Bestellung 9900 Stücke:
Lieferzeit 21-28 Tag (e)
FQH35N40Fairchild SemiconductorDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 846 Stücke:
Lieferzeit 21-28 Tag (e)
57+13.88 EUR
Mindestbestellmenge: 57
FQH44N10ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Rail
Produkt ist nicht verfügbar
FQH44N10onsemiDescription: MOSFET N-CH 100V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
FQH44N10onsemi / FairchildMOSFET N-CH/100V/48A
Produkt ist nicht verfügbar
FQH44N10-F133ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FQH44N10-F133ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
41+3.83 EUR
50+ 3.06 EUR
Mindestbestellmenge: 41
FQH44N10-F133onsemiDescription: MOSFET N-CH 100V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
FQH44N10-F133ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
45+3.48 EUR
54+ 2.84 EUR
Mindestbestellmenge: 45
FQH44N10-F133onsemi / FairchildMOSFET Trans MOS N-Ch 100V 48A 3-Pin 3+Tab
auf Bestellung 384 Stücke:
Lieferzeit 14-28 Tag (e)
FQH44N10-F133ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FQH44N10-F133ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FQH44N10-F133ONSEMIDescription: ONSEMI - FQH44N10-F133 - Leistungs-MOSFET, n-Kanal, 100 V, 48 A, 0.03 ohm, TO-247
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 48
Qualifikation: -
Verlustleistung Pd: 180
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 180
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.03
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.03
SVHC: No SVHC (08-Jul-2021)
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
FQH70N10onsemiDescription: MOSFET N-CH 100V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
FQH8N100CON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FQH8N100ConsemiDescription: MOSFET N-CH 1000V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
FQH8N100CONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQH8N100CONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
FQH8N100Consemi / FairchildMOSFET 1000V N-Channel
Produkt ist nicht verfügbar
FQH8N100CON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FQH8N100CON Semiconductor / FairchildMOSFET 1000V N-Channel
auf Bestellung 495 Stücke:
Lieferzeit 14-28 Tag (e)
FQH90N10V2Fairchild SemiconductorDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
auf Bestellung 370 Stücke:
Lieferzeit 21-28 Tag (e)
93+7.75 EUR
Mindestbestellmenge: 93
FQH90N15Fairchild SemiconductorDescription: MOSFET N-CH 150V 90A TO-247
Produkt ist nicht verfügbar
FQHA0461-01
auf Bestellung 574 Stücke:
Lieferzeit 21-28 Tag (e)
FQHM0323-00MX96+ PLCC
auf Bestellung 268 Stücke:
Lieferzeit 21-28 Tag (e)
FQHM0323-00MX1996
auf Bestellung 268 Stücke:
Lieferzeit 21-28 Tag (e)