| Anzahl | Preis |
|---|---|
| 1+ | 8.64 EUR |
| 10+ | 4.45 EUR |
| 120+ | 3.92 EUR |
| 510+ | 3.78 EUR |
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Technische Details FQH8N100C onsemi / Fairchild
Description: MOSFET N-CH 1000V 8A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 225W (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote FQH8N100C nach Preis ab 4.15 EUR bis 9.26 EUR
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FQH8N100C | onsemi |
 Description: MOSFET N-CH 1000V 8A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 323 Stücke: Lieferzeit 10-14 Tag (e) |
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FQH8N100C | onsemi |
MOSFETs 1000V N-Channel |
auf Bestellung 253 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQH8N100C | ON Semiconductor / Fairchild |
MOSFET 1000V N-Channel |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQH8N100C |
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Hersteller: onsemi
Description: MOSFET N-CH 1000V 8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1000V 8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.22 EUR |
| 30+ | 5.24 EUR |
| 120+ | 4.36 EUR |
| FQH8N100C |
|
Hersteller: onsemi
MOSFETs 1000V N-Channel
MOSFETs 1000V N-Channel
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.26 EUR |
| 10+ | 5.26 EUR |
| 120+ | 4.38 EUR |
| 510+ | 4.15 EUR |
| FQH8N100C |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET 1000V N-Channel
MOSFET 1000V N-Channel
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)