Produkte > G2K
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| G2K/4 | Vishay Semiconductors | Rectifiers RECOMMENDED ALT BYW5 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G2K2P10D3E | Goford Semiconductor | Description: MOSFET P-CH ESD 100V 10A DFN3*3- Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V | auf Bestellung 4870 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K2P10D3E | Goford Semiconductor | Description: MOSFET P-CH ESD 100V 10A DFN3*3- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G2K2P10S2E | Goford Semiconductor | Description: MOSFET 2P-CH 100V 3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G2K2P10S2E | Goford Semiconductor | Description: MOSFET 2P-CH 100V 3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K2P10SE | Goford Semiconductor | Description: MOSFET P-CH ESD 100V 3.5A SOP-8 Input Capacitance (Ciss) (Max) @ Vds: 1653 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Tc) FET Feature: Standard Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K3N10G | Goford Semiconductor | Description: N100V, 2.5A,RD<220M@10V,VTH1V~2V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) | auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K3N10G | Goford Semiconductor | Description: N100V, 2.5A,RD<220M@10V,VTH1V~2V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K3N10G | Goford Semiconductor | Description: MOSFET N-CH 100V 2.5A SOT-89 Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K3N10H | Goford Semiconductor | Description: MOSFET N-CH 100V 2A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 50 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G2K3N10L6 | Goford Semiconductor | Description: MOSFET 100V 3A SOT23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-6L | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G2K8P15S | Goford Semiconductor | Description: MOSFET P-CH 150V 2.2A SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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