Produkte > G7K
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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| G7K-412S DC125 | Omron Automation and Safety | Description: LATCHING RELAY 125VDC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K-422S-T03 DC125 | Omron Automation and Safety | Description: LATCHING RELAY DC125 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K-422S-T03DC125 | Omron Automation and Safety | Omron | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K2N20HE | GOFORD Semiconductor | N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-223 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| G7K2N20HE | Goford Semiconductor | Description: MOSFET N-CH ESD 200V 2A SOT-223 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| G7K2N20HE | GOFORD Semiconductor | N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-223 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| G7K2N20HE | Goford Semiconductor | Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) | auf Bestellung 1415 Stücke: Lieferzeit 10-14 Tag (e) |
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| G7K2N20HE | GOFORD Semiconductor | N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-223 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| G7K2N20HE | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 200V; 2A; 1.8W; SOT223; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 200V Drain current: 2A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Gate charge: 10.8nC Kind of channel: enhancement Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K2N20HE | Goford Semiconductor | Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K2N20LLE | GOFORD Semiconductor | N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-23-6L | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G7K2N20LLE | Goford Semiconductor | Description: N-PH,200V, ESD,2A,RD<0.7@10V,VTH Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) | auf Bestellung 2348 Stücke: Lieferzeit 10-14 Tag (e) |
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| G7K2N20LLE | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 200V; 2A; 1.8W; SOT23-6; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 200V Drain current: 2A Power dissipation: 1.8W Case: SOT23-6 Gate-source voltage: ±20V Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K2N20LLE | Goford Semiconductor | Description: N-PH,200V, ESD,2A,RD<0.7@10V,VTH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 100 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| G7K9179 | auf Bestellung 5949 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |