Produkte > G7K
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||
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| G7K-412S DC125 | Omron Automation and Safety | Description: LATCHING RELAY 125VDC | Produkt ist nicht verfügbar | |||||||||||
| G7K-422S-T03 DC125 | Omron Automation and Safety | Description: LATCHING RELAY DC125 | Produkt ist nicht verfügbar | |||||||||||
| G7K-422S-T03DC125 | Omron Automation and Safety | Omron | Produkt ist nicht verfügbar | |||||||||||
| G7K2N20HE | Goford Semiconductor | Description: MOSFET N-CH ESD 200V 2A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Supplier Device Package: SOT-223 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||
| G7K2N20HE | Goford Semiconductor | Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V | auf Bestellung 1245 Stücke: Lieferzeit 21-28 Tag (e) |
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| G7K2N20HE | Goford Semiconductor | Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||
| G7K2N20LLE | Goford Semiconductor | Description: MOSFET N-CH ESD 200V 2A SOT-23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V FET Feature: Standard Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 100 V | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| G7K9179 | auf Bestellung 5949 Stücke: Lieferzeit 21-28 Tag (e) |