Produkte > IDY
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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IDY10S120XKSA1 | Infineon Technologies | Description: DIODE SIC 1.2KV 5A PGTO247HC3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO247HC-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IDY15S120XKSA1 | Infineon Technologies | Description: DIODE SIC 1.2KV 7.5A PGTO247HC3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 375pF @ 1V, 1MHz Current - Average Rectified (Io): 7.5A Supplier Device Package: PG-TO247HC-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IDYH10G200C5XKSA1 | Infineon Technologies | SIC DISCRETE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IDYH10G200C5XKSA1 | Infineon Technologies | Schottky Diodes & Rectifiers CoolSiC Schottky diode 2000 V, 10 A G5 in a TO-247PLUS-4 HCC package | auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH10G200C5XKSA1 | Infineon Technologies | Description: DIODE SIC 2000V 35A PGTO247U04 Packaging: Tube Package / Case: TO-247-4 Variant Mounting Type: Through Hole Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1140pF @ 1V, 100kHz Current - Average Rectified (Io): 35A Supplier Device Package: PG-TO247-U04 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 2000 V | auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH25G200C5XKSA1 | Infineon Technologies | Schottky Diodes & Rectifiers CoolSiC Schottky diode 2000 V, 25 A G5 in a TO-247PLUS-4 HCC package | auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH25G200C5XKSA1 | Infineon Technologies | Description: DIODE SIC 2000V 77A PGTO247U04 Packaging: Tube Package / Case: TO-247-4 Variant Mounting Type: Through Hole Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1140pF @ 1V, 100kHz Current - Average Rectified (Io): 77A Supplier Device Package: PG-TO247-U04 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A Current - Reverse Leakage @ Vr: 375 µA @ 2000 V | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH40G200C5XKSA1 | Infineon Technologies | Schottky Diodes & Rectifiers CoolSiC Schottky diode 2000 V, 40 A G5 in a TO-247PLUS-4 HCC package | auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH40G200C5XKSA1 | Infineon Technologies | Description: DIODE SIC 2000V 114A PGTO247U04 Packaging: Tube Package / Case: TO-247-4 Variant Mounting Type: Through Hole Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 4550pF @ 1V, 100kHz Current - Average Rectified (Io): 114A Supplier Device Package: PG-TO247-U04 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A Current - Reverse Leakage @ Vr: 600 µA @ 2000 V | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH40G200C5XKSA1 | Infineon Technologies | SIC DISCRETE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IDYH50G200C5XKSA1 | Infineon Technologies | Schottky Diodes & Rectifiers CoolSiC Schottky diode 2000 V, 50 A G5 in a TO-247PLUS-4 HCC package | auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH50G200C5XKSA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tube | auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH80G200C5XKSA1 | Infineon Technologies | Schottky Diodes & Rectifiers CoolSiC Schottky diode 2000 V, 80 A G5 in a TO-247PLUS-4 HCC package | auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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IDYH80G200C5XKSA1 | Infineon Technologies | Description: DIODE SIC 2000V 157A PGTO247U04 Packaging: Tube Package / Case: TO-247-4 Variant Mounting Type: Through Hole Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 9100pF @ 1V, 100kHz Current - Average Rectified (Io): 157A Supplier Device Package: PG-TO247-U04 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A Current - Reverse Leakage @ Vr: 1.2 A @ 2000 V | auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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