Produkte > IGK
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| IGK048B041SXTSA1 | Infineon Technologies | Description: GANFET N-CH 40V 53A 16WLBGA Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V Power Dissipation (Max): 1.7W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V | auf Bestellung 3964 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGK048B041SXTSA1 | Infineon Technologies | Description: GANFET N-CH 40V 53A 16WLBGA Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V Power Dissipation (Max): 1.7W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IGK120B041SXTSA1 | Infineon Technologies | Description: GANFET N-CH 40V 30A 16WLBGA Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V Power Dissipation (Max): 1.2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V | auf Bestellung 3975 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGK120B041SXTSA1 | Infineon Technologies | Description: GANFET N-CH 40V 30A 16WLBGA Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V Power Dissipation (Max): 1.2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IGK120B041SXTSA1 | Infineon Technologies | GaN FETs CoolGaN Bidirectional Switch | auf Bestellung 3998 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGK3012-BPKG/M/6M/ZH Produktcode: 170739
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| Aktive Bauelemente > Sensoren | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |