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IGZ100N65H5Infineon TechnologiesDescription: IGZ100N65 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
IGZ100N65H5Infineon technologies
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
IGZ100N65H5XKSA1INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Turn-on time: 40ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 268W
Kind of package: tube
Gate charge: 0.21µC
Technology: TRENCHSTOP™ 5
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IGZ100N65H5XKSA1Infineon TechnologiesIGBT Transistors IGBT PRODUCTS
auf Bestellung 25 Stücke:
Lieferzeit 14-28 Tag (e)
3+17.58 EUR
10+ 15.05 EUR
25+ 13.65 EUR
100+ 12.56 EUR
240+ 11.8 EUR
Mindestbestellmenge: 3
IGZ100N65H5XKSA1INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Turn-on time: 40ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 268W
Kind of package: tube
Gate charge: 0.21µC
Technology: TRENCHSTOP™ 5
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
IGZ100N65H5XKSA1Infineon TechnologiesDescription: IGBT TRENCH 650V 161A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
auf Bestellung 1718 Stücke:
Lieferzeit 21-28 Tag (e)
69+10.49 EUR
Mindestbestellmenge: 69
IGZ100N65H5XKSA1Infineon TechnologiesTrans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IGZ100N65H5XKSA1Infineon TechnologiesDescription: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
Produkt ist nicht verfügbar
IGZ50N65H5XKSA1INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 27ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IGZ50N65H5XKSA1Infineon TechnologiesDescription: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Produkt ist nicht verfügbar
IGZ50N65H5XKSA1Infineon TechnologiesTrans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IGZ50N65H5XKSA1INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 27ns
Turn-off time: 271ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IGZ50N65H5XKSA1Infineon TechnologiesIGBT Transistors IGBT PRODUCTS
auf Bestellung 42 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.58 EUR
10+ 10.53 EUR
100+ 8.87 EUR
240+ 7.51 EUR
480+ 7.38 EUR
1200+ 5.98 EUR
Mindestbestellmenge: 5
IGZ75N65H5Infineon technologies
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
IGZ75N65H5Infineon TechnologiesInfineon INDUSTRY 14
Produkt ist nicht verfügbar
IGZ75N65H5XKSA1Infineon TechnologiesIGBT Transistors IGBT PRODUCTS
auf Bestellung 89 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.82 EUR
10+ 12.69 EUR
25+ 11.88 EUR
100+ 11.26 EUR
240+ 9.52 EUR
480+ 9.33 EUR
1200+ 8.01 EUR
Mindestbestellmenge: 4
IGZ75N65H5XKSA1INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 197W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
IGZ75N65H5XKSA1Infineon TechnologiesDescription: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 218 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.74 EUR
10+ 12.63 EUR
Mindestbestellmenge: 2
IGZ75N65H5XKSA1INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 197W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 415ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IGZ75N65H5XKSA1Infineon TechnologiesTrans IGBT Chip N-CH 650V 119A 395000mW 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar