Produkte > NP6

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
NP6-11D/1F whiteChint Group CorporationКнопка белая без фиксации SPDT, LED-индикатор 24В
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
NP6-11D/5F yellowChint Group CorporationКнопка желтая без фиксации SPDT, LED-индикатор 24В
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
NP6-11DS/6F blueChint Group CorporationКнопка синяя с фиксацией SPDT, LED-индикатор 24В
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
NP6-22DS/4FChint Group CorporationКнопка красная с фиксацией DPDT, LED-индикатор 24В
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
NP60N03KUG
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N03KUG-E1-AYRenesas ElectronicsMOSFET POWER E AUTO MOS MP-25LZA/LZK UMOS4
Produkt ist nicht verfügbar
NP60N03KUG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03KUG-E1/-AY/JM
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N03KUG00377Renesas ElectronicsMOSFET TO-220
Produkt ist nicht verfügbar
NP60N03SUG
auf Bestellung 2344 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N03SUG(1)-E1-AYRenesas Electronics America IncDescription: TRANSISTOR
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar
NP60N03SUG(1)-E1-AYRenesas ElectronicsMOSFET
Produkt ist nicht verfügbar
NP60N03SUG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03SUG-E1-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP60N03SUG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03SUG-E2-AYRenesas ElectronicsMOSFET
Produkt ist nicht verfügbar
NP60N04HLF
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04ILF
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04ILF-E1-AZRenesasDescription: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
156+4.63 EUR
Mindestbestellmenge: 156
NP60N04KUG
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04KUG-E1
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04KUG-E1-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
NP60N04KUG-E1-AYRenesasTrans MOSFET N-CH 40V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NP60N04KUG-E2-AZRenesasTrans MOSFET N-CH 40V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NP60N04MUG
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04MUG-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
NP60N04MUK
auf Bestellung 2344 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04MUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 60A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
NP60N04NUK
auf Bestellung 5555 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04NUK-S18-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP60N04NUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 60A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
NP60N04VDK-E1-AYRenesas Electronics CorporationDescription: POWER TRS2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.7 EUR
Mindestbestellmenge: 2500
NP60N04VDK-E1-AYRenesas Electronics CorporationDescription: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4467 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.11 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
NP60N04VDK-E1-AYRenesas ElectronicsMOSFET POWER TRS2
Produkt ist nicht verfügbar
NP60N04VLK-E1-AYRenesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NP60N04VLK-E1-AYRenesas ElectronicsMOSFET P-TRS2 AUTOMOTIVE MOS
Produkt ist nicht verfügbar
NP60N04VLK-E1-AYRenesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
10+ 3.21 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 7
NP60N04VUK
auf Bestellung 4543 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N04VUK-E1-AYRenesas ElectronicsMOSFET POWER DEVICE E AUTOMOTIVE MOS MP-3ZP
Produkt ist nicht verfügbar
NP60N04VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
auf Bestellung 4210 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.11 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
NP60N04VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
NP60N055KUG
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N055KUG-E1
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
NP60N055KUG-E1-AYRenesas ElectronicsMOSFET LOW VOLTAGE POWER MOSFET
Produkt ist nicht verfügbar
NP60N055KUG-E1-AYRenesas Electronics America IncDescription: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Produkt ist nicht verfügbar
NP60N055MUK-S18-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP60N055MUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 55V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Produkt ist nicht verfügbar
NP60N055NUK-S18-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP60N055NUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 55V 60A TO262
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Produkt ist nicht verfügbar
NP60N055VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 7973 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.74 EUR
10+ 3.1 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 7
NP60N055VUK-E1-AYRenesas ElectronicsMOSFET Power MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 126-140 Tag (e)
14+3.77 EUR
17+ 3.15 EUR
100+ 2.49 EUR
500+ 2.1 EUR
1000+ 1.79 EUR
2500+ 1.7 EUR
5000+ 1.64 EUR
Mindestbestellmenge: 14
NP60N055VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.68 EUR
5000+ 1.62 EUR
Mindestbestellmenge: 2500
NP60N06MLK-S18-AYRenesas ElectronicsMOSFET
Produkt ist nicht verfügbar
NP60N06PDK-E1-AYRenesas ElectronicsMOSFET MOSFET TRANSISTOR MORE 1 W
Produkt ist nicht verfügbar
NP60N06PDK-E1-AYRenesas Electronics CorporationDescription: MOSFET TRANSISTOR MORE 1 W
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 105W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NP60N06VDK-E1-AYRenesas ElectronicsMOSFET P-TRS2 AUTOMOTIVE MOS
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.77 EUR
17+ 3.15 EUR
100+ 2.49 EUR
250+ 2.31 EUR
500+ 2.1 EUR
1000+ 1.8 EUR
2500+ 1.71 EUR
Mindestbestellmenge: 14
NP60N06VDK-E1-AYRenesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.7 EUR
5000+ 1.63 EUR
Mindestbestellmenge: 2500
NP60N06VDK-E1-AYRenesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8899 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.13 EUR
100+ 2.49 EUR
500+ 2.1 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
NP60N06VLK-E1-AYRenesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.74 EUR
Mindestbestellmenge: 2500
NP60N06VLK-E1-AYRenesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3227 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
10+ 3.21 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 7
NP60N06VLK-E1-AYRenesas ElectronicsMOSFET P-TRS2 AUTOMOTIVE MOS
Produkt ist nicht verfügbar
NP6120-30
auf Bestellung 6049 Stücke:
Lieferzeit 21-28 Tag (e)
NP65-12YUASADescription: YUASA - NP65-12 - Akku, Baureihe NP, verschlossen, Einzelzelle, 12 V, Bleisäure, 65 Ah, Schraube
NEDA-Code: -
Batterie-/Akkuspannung: 12
Batteriekapazität: 65
Batterie-/Akkutechnologie: Bleisäure
Außenbreite: 166
Außentiefe: 350
Batterie-/Akkugrößencode: -
Außendurchmesser: -
Menge pro Packung: 1
Außenhöhe: 174
Batterie-/Akkuanschlüsse: Schraube
Produktpalette: NP Series
IEC-Code Batterie/Akku: -
Gewicht: 23
SVHC: Lead (19-Jan-2021)
Produkt ist nicht verfügbar
NP65-12FRYuasa BatteryDescription: 12V, 65 AH SLA
Packaging: Case
Capacity: 65Ah
Size / Dimension: 13.78" L x 6.54" W x 6.85" H (350.0mm x 166.1mm x 174.0mm)
Termination Style: Nut and Bolt, M6
Battery Chemistry: Sealed Lead Acid (SLA, VRLA)
Part Status: Active
Voltage - Rated: 12 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
1+838.81 EUR
10+ 683.23 EUR
20+ 651.3 EUR
NP65-12IYUASACategory: Acid Cells
Description: Re-battery: acid-lead; 12V; 65Ah; AGM; maintenance-free; 22.82kg
Conform to the norm: VdS
Body dimensions: 350x166x174mm
Rechargeable batteries application: power backup systems
Rechargeable batteries features: maintenance-free
Rated voltage: 12V
Storage time: 3-5 years
Technology: AGM
Capacity: 65Ah
Type of rechargeable battery: acid-lead
Net weight: 22.82kg
Leads: screw M6
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+261.06 EUR
NP6501
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)