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NP60N06VDK-E1-AY

NP60N06VDK-E1-AY Renesas Electronics

REN_r07ds1340ej0200_pomosfet_DST_20180524-2930603.pdf Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 60V 60A 7.9mohm TO-252 / DPAK
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.36 EUR
10+1.97 EUR
100+1.56 EUR
250+1.45 EUR
500+1.31 EUR
1000+1.12 EUR
2500+1.07 EUR
Mindestbestellmenge: 2
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Technische Details NP60N06VDK-E1-AY Renesas Electronics

Description: P-TRS2 AUTOMOTIVE MOS, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V, Power Dissipation (Max): 1.2W (Ta), 105W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZP), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NP60N06VDK-E1-AY nach Preis ab 1.22 EUR bis 2.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NP60N06VDK-E1-AY NP60N06VDK-E1-AY Hersteller : Renesas Electronics Corporation np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+2.06 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.22 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VDK-E1-AY NP60N06VDK-E1-AY Hersteller : Renesas Electronics Corporation np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
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