NP60N03KUG-E1-AY

NP60N03KUG-E1-AY Renesas Electronics Corporation


np60n03kug-data-sheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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Technische Details NP60N03KUG-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 30V 60A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V, Power Dissipation (Max): 1.8W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V.

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NP60N03KUG-E1-AY NP60N03KUG-E1-AY Hersteller : Renesas Electronics REN_D16860EJ1V0DS00_DST_20040901-1998835.pdf MOSFET POWER E AUTO MOS MP-25LZA/LZK UMOS4
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