Produkte > NVV
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||
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| NVVR26A120M1WSB | onsemi | MOSFET Modules SIC A1HPM 1200 V | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVVR26A120M1WSB | onsemi | Description: MOSFET 2N-CH 1200V AHPM15-CDE Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDE Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVVR26A120M1WSS | onsemi | Discrete Semiconductor Modules SIC A1HPM 1200 V | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVVR26A120M1WSS | onsemi | Description: MOSFET 2N-CH 1200V AHPM15-CDI Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDI Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| NVVR26A120M1WST | onsemi | MOSFET Modules SIC A1HPM 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| NVVR26A120M1WST | onsemi | Description: MOSFET 2N-CH 1200V AHPM15-CDA Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDA Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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