Produkte > P0R
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P0R5B60HP2-5071 | SHINDENGEN | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET | auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| P0R5B60HP2-5071 | SHINDENGEN | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 2999 Stücke: Lieferzeit 7-14 Tag (e) |
|