Produkte > RGF
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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RGF02-20 | auf Bestellung 5700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10A | auf Bestellung 37800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10G | auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10J | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10K | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10M | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10M(FR107) | auf Bestellung 8698 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10M-F | auf Bestellung 13700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF10M/ZR10M | ZOWIE | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
RGF15D | auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A | Fairchild Semiconductor | Description: RECTIFIER DIODE, 1A, 50V, DO-214 | auf Bestellung 34845 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1A | onsemi / Fairchild | Rectifiers 50V 1a Rectifier Glass Passivated | auf Bestellung 14214 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A | EIC | SURFACE MOUNT FAST RECOVERY RECTIFIERS | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A-E3/5CA | Vishay Semiconductors | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A-E3/5CA | Vishay | Diode Switching 50V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A-E3/67A | Vishay | Diode Switching 50V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A-E3/67A | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1A-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | auf Bestellung 5271 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
RGF1A-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 50 Volt 150ns 30 Amp IFSM | auf Bestellung 10500 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
RGF1A-E3/67A | Vishay | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A-E3/67A | Vishay | Diode Switching 50V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1A-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
RGF1AHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1AHE3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 50 Volt 150ns 30 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B | ON Semiconductor | Rectifier Diode Switching 100V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B | ONSEMI | Description: ONSEMI - RGF1B - Diode mit Standard-Erholzeit, 100 V, 1 A, Einfach, 1.3 V, 150 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 150ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 2898 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1B | onsemi | Description: DIODE GEN PURP 100V 1A DO214AC | auf Bestellung 6970 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1B | ON Semiconductor | Rectifier Diode Switching 100V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B | onsemi | Description: DIODE GEN PURP 100V 1A DO214AC | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B | onsemi / Fairchild | Rectifiers 100V 1a Rectifier Glass Passivated | auf Bestellung 7180 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1B | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 100V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B | ONSEMI | Description: ONSEMI - RGF1B - Diode mit Standard-Erholzeit, 100 V, 1 A, Einfach, 1.3 V, 150 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 150ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 2898 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1B | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 100V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B | Fairchild Semiconductor | Description: DIODE GEN PURP 100V 1A DO214AC | auf Bestellung 20437 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1B-E3/5CA | Vishay Semiconductors | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B-E3/5CA | Vishay | Diode Switching 100V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | auf Bestellung 2197 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1B-E3/67A | Vishay | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1B-E3/67A | Vishay | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1B-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 100 Volt 150ns 30 Amp IFSM | auf Bestellung 7433 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1B-E3/67A | Vishay | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1BHE3-A/H | Vishay | Rectifiers 1A 100V 150NS FS. RECT | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1BHE3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 100 Volt 150ns 30 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1BHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D | onsemi | Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 200V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D | Fairchild Semiconductor | Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 200V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D | onsemi / Fairchild | Rectifiers 200V 1a Rectifier Glass Passivated | auf Bestellung 6356 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1D | onsemi | Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 5805 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/17A | auf Bestellung 13700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1D-E3/1TA | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1D-E3/5CA | Vishay | Diode Switching 200V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/5CA | Vishay General Semiconductor | Rectifiers 1A,200V,150NS,FS. SUPERECT,SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/5CA | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/5CA | Vishay | Diode Switching 200V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/67A | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1D-E3/67A | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1D-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 25718 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1D-E3/67A | VISHAY | Description: VISHAY - RGF1D-E3/67A - Diode mit Standard-Erholzeit, 200 V, 1 A, Einfach, 1.3 V, 150 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214BA Durchlassstoßstrom: 30A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 150ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 2Pin(s) Produktpalette: RGF1D productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 52572 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1D-E3/67A | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-214BA T/R | auf Bestellung 6007 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1D-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1D-E3/67A Produktcode: 185133 | Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive) | Produkt ist nicht verfügbar | ||||||||||||||||||||
RGF1D-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 200 Volt 150ns 30 Amp IFSM | auf Bestellung 29703 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1D-E3/67A | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-214BA T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1DHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1DHE3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 200 Volt 150ns 30 Amp IFSM | auf Bestellung 5992 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
RGF1DHE3/67A | Vishay | Rectifier Diode Switching 200V 1A 150ns Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1DHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1DHE3_A/H | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 200V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G | ON Semiconductor | Rectifier Diode Switching 400V 1A 150ns 2-Pin SMA T/R | auf Bestellung 3550 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1G | ON Semiconductor | Rectifier Diode Switching 400V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G | ONSEMI | Description: ONSEMI - RGF1G - Diode mit Standard-Erholzeit, 400 V, 1 A, Einfach, 1.3 V, 150 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 150ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 400V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 17516 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1G | onsemi | Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 15072 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1G | EIC | SURFACE MOUNT FAST RECOVERY RECTIFIERS | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G | onsemi / Fairchild | Rectifiers 400V 1a Rectifier Glass Passivated | auf Bestellung 3237 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1G | ON Semiconductor | Rectifier Diode Switching 400V 1A 150ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A Anzahl je Verpackung: 1 Stücke | auf Bestellung 3945 Stücke: Lieferzeit 7-14 Tag (e) |
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RGF1G | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A | auf Bestellung 3945 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1G | ONSEMI | Description: ONSEMI - RGF1G - Diode mit Standard-Erholzeit, 400 V, 1 A, Einfach, 1.3 V, 150 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 150ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 400V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 17516 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1G | onsemi | Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1G-1HE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-1HE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/5CA | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1A 400V 150NS FS. RECT | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/5CA | Vishay | Rectifier Diode Switching 400V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/5CA | Vishay | Rectifier Diode Switching 400V 1A 150ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/67A | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1G-E3/67A | Vishay | Diode Switching 400V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 8701 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1G-E3/67A | Vishay | Diode Switching 400V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 400 Volt 150ns 30 Amp IFSM | auf Bestellung 11646 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1G-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1G-E3/67A | Vishay | Diode Switching 400V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1G/17A | Vishay Semiconductors | Diodes - General Purpose, Power, Switching RECOMMENDED ALT 625-RGF1G-E3 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1GHE3/67A | Vishay | Rectifier Diode Switching 400V 1A 150ns Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1GHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1GHE3/67A | Vishay | Rectifier Diode Switching 400V 1A 150ns Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1GHE3/67A | Vishay | Rectifier Diode Switching 400V 1A 150ns Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1GHE3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 400 Volt 150ns 30 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1GHE3_A/H | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 400V 30Amp AEC-Q101 | auf Bestellung 1400 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1J | ONSEMI | Description: ONSEMI - RGF1J - Diode mit Standard-Erholzeit, 600 V, 1 A, Einfach, 1.3 V, 250 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 250ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 600V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1J | onsemi / Fairchild | Rectifiers 600V 1a Rectifier Glass Passivated | auf Bestellung 9806 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1J | onsemi | Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J | ON Semiconductor | Rectifier Diode Switching 600V 1A 250ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Max. forward impulse current: 30A | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J | ON Semiconductor | Rectifier Diode Switching 600V 1A 250ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J | onsemi | Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J | ONSEMI | Description: ONSEMI - RGF1J - Diode mit Standard-Erholzeit, 600 V, 1 A, Einfach, 1.3 V, 250 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 250ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 600V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1J | Fairchild Semiconductor | Description: RECTIFIER DIODE, 1A, 600V, DO-21 Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J | EIC | SURFACE MOUNT FAST RECOVERY RECTIFIERS | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1J | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Max. forward impulse current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J(RGF1J) | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1J-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J-E3/5CA | Vishay | Diode Switching 600V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J-E3/5CA | Vishay | Diode Switching 600V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J-E3/5CA | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM | auf Bestellung 6045 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1J-E3/67A | Vishay | Diode Switching 600V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J-E3/67A | VISHAY | RGF1J-E3/67A SMD universal diodes | auf Bestellung 4729 Stücke: Lieferzeit 7-14 Tag (e) |
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RGF1J-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 19622 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1J-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM | auf Bestellung 6391 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1J-E3/67A | Vishay | Diode Switching 600V 1A 2-Pin DO-214BA T/R | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1J-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 19500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1J-E3/67A | Vishay | Diode Switching 600V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1J/17A(RJ) | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF1JHE3/5CA | Vishay | Rectifier Diode Switching 600V 1A 250ns Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1JHE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1JHE3/5CA | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM | auf Bestellung 1706 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
RGF1JHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1JHE3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1JHE3_A/H | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 600V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1JHE3_A/I | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 600V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K | onsemi | Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1K | ONSEMI | Description: ONSEMI - RGF1K - 1.0A FAST RECOVERY RECTIFIER SVHC: Lead (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K | onsemi / Fairchild | Rectifiers 800V 1a Rectifier Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K | ON Semiconductor | Rectifier Diode Switching 800V 1A 500ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K | ON Semiconductor | Rectifier Diode Switching 800V 1A 500ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K | onsemi | Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 14885 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1K | EIC | SURFACE MOUNT FAST RECOVERY RECTIFIERS | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K-E3/5CA | Vishay Semiconductors | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K-E3/5CA | Vishay | Diode Switching 800V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K-E3/67A | Vishay | Diode Switching 800V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1K-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 800 Volt 500ns 30 Amp IFSM | auf Bestellung 4599 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1K-E3/67A | Vishay | Diode Switching 800V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1K-E3/67A | Vishay | Diode Switching 800V 1A 2-Pin DO-214BA T/R | auf Bestellung 3060 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1K-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 5986 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1KHE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3_A/H | Vishay General Semiconductor | Rectifiers 1A,800V,500NS,FS. AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3_A/H | Vishay | Diode Switching 800V 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3_B/H | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 800V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1KHE3_B/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | EIC | Diode Switching 1KV 1A 2-Pin SMA | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 30A | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | ON Semiconductor | Diode Switching 1KV 1A 2-Pin SMA T/R | auf Bestellung 3249 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1M | ON Semiconductor | Diode Switching 1KV 1A 2-Pin SMA T/R | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1M | onsemi / Fairchild | Rectifiers 1000V 1a Rectifier Glass Passivated | auf Bestellung 19649 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1M | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 30A Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | onsemi | Description: DIODE GEN PURP 1KV 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | ON Semiconductor | Diode Switching 1KV 1A 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | ONSEMI | Description: ONSEMI - RGF1M - Diode mit Standard-Erholzeit, 1 kV, 1 A, Einfach, 1.3 V, 500 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 500ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: RGF1M productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1M | EIC | Diode Switching 1KV 1A 2-Pin SMA | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M | ON Semiconductor | Diode Switching 1KV 1A 2-Pin SMA T/R | auf Bestellung 3249 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1M | ONSEMI | Description: ONSEMI - RGF1M - Diode mit Standard-Erholzeit, 1 kV, 1 A, Einfach, 1.3 V, 500 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 500ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: RGF1M productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1M | onsemi | Description: DIODE GEN PURP 1KV 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | auf Bestellung 2281 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1M-7000HE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M-7000HE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M-7000HE3_B/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M-E3/5CA | Vishay | Diode Switching 1KV 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M-E3/67A | VISHAY | Description: VISHAY - RGF1M-E3/67A - Diode mit Standard-Erholzeit, 1 kV, 1 A, Einfach, 1.3 V, 500 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214BA Durchlassstoßstrom: 30A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 500ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: Superectifier RGF1x Series productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 3850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1M-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1M-E3/67A | Vishay | Diode Switching 1KV 1A 2-Pin DO-214BA T/R | auf Bestellung 4986 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1M-E3/67A | Vishay | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M-E3/67A | Vishay | Diode Switching 1KV 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1M-E3/67A | VISHAY | Description: VISHAY - RGF1M-E3/67A - Diode mit Standard-Erholzeit, 1 kV, 1 A, Einfach, 1.3 V, 500 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214BA Durchlassstoßstrom: 30A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 500ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: Superectifier RGF1x Series productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 3850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1M-E3/67A | Vishay | Diode Switching 1KV 1A 2-Pin DO-214BA T/R | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
RGF1M-E3/67A | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1 Amp 1000Volt 500ns 30 Amp IFSM | auf Bestellung 7851 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1M-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | auf Bestellung 5318 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1M-E3/67A | Vishay | Diode Switching 1KV 1A 2-Pin DO-214BA T/R | auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1MHE3/5CA | Vishay | Diode Switching 1KV 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3/67A | Vishay | Rectifier Diode Switching 1KV 1A 500ns Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3_A/H | Vishay | 1A,1000V,500NS,FS. SUPERECT,SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3_A/H | Vishay General Semiconductor | Rectifiers 1A,1000V,500NS,FS. AEC-Q101 Qualified | auf Bestellung 5403 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
RGF1MHE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3_A/I | Vishay General Semiconductor | Rectifiers 1A,1000V,500NS,FS. AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF1MHE3_B/H | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1000V 30Amp AEC-Q101 | auf Bestellung 1490 Stücke: Lieferzeit 14-28 Tag (e) |
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RGF1MHE3_B/I | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1000V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGF20G | ZOWIE | 2A | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
RGF20K/ZR20K | ZOWIE | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
RGF30B | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
RGF320 | Rego Electronics | CPU & Chip Coolers Aluminum stacked fins w/ Copper base w/ heat pipesFan 92x25 Axial w/ PWM | auf Bestellung 4 Stücke: Lieferzeit 14-28 Tag (e) |
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RGFRA1204011DFT | Walsin | Antennas PCB Antenna | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1204021A1T | Walsin | Antennas PCB Antenna | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1204021A1T | Walsin Technol.Corp. | ANTENNA BLUETOOTH, WiFi, f:2.4GHz?2.5GHz, 2dBi , SMD , 50 Ohm RGFRA1204021A1T RF RGFRA1204021A1T Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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RGFRA1204021A1T | WALSIN | Category: WiFi/Bluetooth antennas Description: Antenna; Bluetooth,WiFi; 2dBi; linear; 12x4x2mm; SMD; 50Ω; -40÷85°C Dimensions: 12x4x2mm Frequency: 2.4...2.5GHz Operating temperature: -40...85°C Polarisation: linear Type of communications modules accessories: antenna Impedance: 50Ω Kind of antenna: Bluetooth; WiFi Antenna gain: 2dBi Mounting: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1204021A1T | WALSIN | Category: WiFi/Bluetooth antennas Description: Antenna; Bluetooth,WiFi; 2dBi; linear; 12x4x2mm; SMD; 50Ω; -40÷85°C Dimensions: 12x4x2mm Frequency: 2.4...2.5GHz Operating temperature: -40...85°C Polarisation: linear Type of communications modules accessories: antenna Impedance: 50Ω Kind of antenna: Bluetooth; WiFi Antenna gain: 2dBi Mounting: SMD Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1903041A1T | Walsin Technology Corporation | Description: RF ANT 2.4GHZ CHIP SOLDER SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1903041A1T | Walsin | Antennas 2.45GHz 2dBi 19x3.0x3.8 | auf Bestellung 353 Stücke: Lieferzeit 14-28 Tag (e) |
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RGFRA1903041A1T | Walsin Technology Corporation | Description: RF ANT 2.4GHZ CHIP SOLDER SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1903041A1T | Walsin Technology | 2.4 GHz ISM Band Working Frequency | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA1903041A5T | Walsin | Antennas PCB Antenna | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA8010110A2T | Walsin Technology Corporation | Description: TAPE & REEL (TR) Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Applications: Bluetooth, ISM Gain: 3.61dBi Termination: Solder Number of Bands: 1 Antenna Type: Chip Height (Max): 0.051" (1.30mm) Return Loss: -9.6dB Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.45GHz RF Family/Standard: Bluetooth | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA8010110A2T | Walsin Technology Corporation | Description: TAPE & REEL (TR) Packaging: Cut Tape (CT) Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Applications: Bluetooth, ISM Gain: 3.61dBi Termination: Solder Number of Bands: 1 Antenna Type: Chip Height (Max): 0.051" (1.30mm) Return Loss: -9.6dB Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.45GHz RF Family/Standard: Bluetooth | auf Bestellung 2003 Stücke: Lieferzeit 21-28 Tag (e) |
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RGFRA9937380A3T | WALSIN | Category: WiFi/Bluetooth antennas Description: Antenna; Bluetooth,WiFi; 2dBi; linear; 9.9x3.7x3.8mm; SMD; 50Ω Dimensions: 9.9x3.7x3.8mm Type of communications modules accessories: antenna Kind of antenna: Bluetooth; WiFi Antenna gain: 2dBi Mounting: SMD Operating temperature: -40...85°C Impedance: 50Ω Frequency: 2.4...2.55GHz Polarisation: linear | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA9937380A3T | Walsin Technol.Corp. | 2.4 GHz ISM Band Working Frequency ANTENA BLUETOOTH,WIFI, F:2.4GHz?2.5GHz, 2dBi, SMD, 50Ohm RGFRA9937380A3T RF RGFRA9937380A3T Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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RGFRA9937380A3T | Walsin Technology | 2.4 GHz ISM Band Working Frequency | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA9937380A3T | Walsin | Antennas 2.55GHz 2dBi 9.9x3.7x3.8 | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA9937380A3T | WALSIN | Category: WiFi/Bluetooth antennas Description: Antenna; Bluetooth,WiFi; 2dBi; linear; 9.9x3.7x3.8mm; SMD; 50Ω Dimensions: 9.9x3.7x3.8mm Type of communications modules accessories: antenna Kind of antenna: Bluetooth; WiFi Antenna gain: 2dBi Mounting: SMD Operating temperature: -40...85°C Impedance: 50Ω Frequency: 2.4...2.55GHz Polarisation: linear Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFRA9937380AxT | Walsin | Antennas PCB Antenna | Produkt ist nicht verfügbar | |||||||||||||||||||
RGFW-I002A | WCDMA 1036+ BGA | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |