Produkte > SIU

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SIU175-40-L5SunStarDescription: PROPANE HEATER INFRARED STANDARD
Packaging: Bulk
Voltage: 120V
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Current Rating (Amps): 2.4
Fuel Type: Propane
Length (Inches): 273
Width (Inches): 13
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+5440.32 EUR
SIU175-40-N5SunStarDescription: NATURAL GAS HEATER INFRARED VACU
Packaging: Bulk
Voltage: 120V
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Current Rating (Amps): 2.4
Fuel Type: Natural Gas
Length (Inches): 273
Width (Inches): 13
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+5677.7 EUR
SIU175-40-TG-L5SunStarDescription: PROPANE HEATER INFRARED TOUGHGUY
Packaging: Bulk
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Fuel Type: Propane
Length (Inches): 273
Width (Inches): 31
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+5777.8 EUR
SIU175-40-TG-N5SunStarDescription: NATURAL GAS HEATER INFRARED VACU
Packaging: Bulk
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Fuel Type: Natural Gas
Length (Inches): 273
Width (Inches): 31
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+5597.62 EUR
SIU175-50-L5SunStarDescription: PROPANE HEATER INFRARED STANDARD
Packaging: Bulk
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Fuel Type: Propane
Length (Inches): 333
Width (Inches): 31
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+7422.12 EUR
SIU175-50-N5SunStarDescription: NATURAL GAS HEATER INFRARED VACU
Packaging: Bulk
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Fuel Type: Natural Gas
Length (Inches): 333
Width (Inches): 31
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+6355.52 EUR
SIU175-50-TG-L5SunStarDescription: PROPANE HEATER INFRARED TOUGHGUY
Packaging: Bulk
Material: Cast Iron Burner, Aluminum Reflectors
Height: 6-1/4"
Part Status: Active
Fuel Type: Propane
Length (Inches): 333
Width (Inches): 31
BTU's: 175000
Ignition Type: Direct Spark
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
1+7473.88 EUR
SIUD401ED-T1-GE3Vishay SiliconixDescription: MOSFET P-CH 30V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3VishayTrans MOSFET P-CH 30V 0.32A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3VISHAYSIUD401ED-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3Vishay SiliconixDescription: MOSFET P-CH 30V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3VISHAYDescription: VISHAY - SIUD401ED-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 500 mA, 1.23 ohm, PowerPAK 0806, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 500
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 1.25
Gate-Source-Schwellenspannung, max.: 1.4
Verlustleistung: 1.25
Bauform - Transistor: PowerPAK 0806
Anzahl der Pins: 3
Produktpalette: TrenchFET Gen III
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 1.23
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 1.23
SVHC: No SVHC (10-Jun-2022)
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3Vishay SemiconductorsMOSFET -30V Vds; +/-12V Vgs PowerPAK 0806
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3VISHAYDescription: VISHAY - SIUD401ED-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 500 mA, 1.23 ohm, PowerPAK 0806, Oberflächenmontage
Verlustleistung: 1.25
Kanaltyp: p-Kanal
Drain-Source-Durchgangswiderstand: 1.23
Qualifikation: -
SVHC: No SVHC (10-Jun-2022)
Produkt ist nicht verfügbar
SIUD401ED-T1-GE3VishayTrans MOSFET P-CH 30V 0.32A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SIUD402ED-T1-GE3Vishay SemiconductorsMOSFET 20V Vds 8V Vgs PowerPAK 0806
auf Bestellung 132843 Stücke:
Lieferzeit 14-28 Tag (e)
48+1.09 EUR
68+ 0.77 EUR
163+ 0.32 EUR
1000+ 0.24 EUR
3000+ 0.18 EUR
9000+ 0.16 EUR
24000+ 0.15 EUR
Mindestbestellmenge: 48
SIUD402ED-T1-GE3Vishay SiliconixDescription: MOSFET N-CH 20V 1A PPAK 0806
Produkt ist nicht verfügbar
SIUD402ED-T1-GE3VishayN-CHANNEL 20 V (D-S) MOSFET
Produkt ist nicht verfügbar
SIUD402ED-T1-GE3VISHAYSIUD402ED-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3Vishay / SiliconixMOSFET -20V Vds 8V Vgs PowerPAK 0806
auf Bestellung 26850 Stücke:
Lieferzeit 14-28 Tag (e)
64+0.82 EUR
86+ 0.61 EUR
184+ 0.28 EUR
1000+ 0.22 EUR
3000+ 0.17 EUR
24000+ 0.16 EUR
Mindestbestellmenge: 64
SiUD403ED-T1-GE3Vishay SiliconixDescription: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 3000
SIUD403ED-T1-GE3VishayTrans MOSFET P-CH 20V 0.5A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 1.7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.8A
Drain-source voltage: -20V
Drain current: -500mA
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 1.7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.8A
Drain-source voltage: -20V
Drain current: -500mA
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3Vishay SiliconixDescription: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 11633 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
42+ 0.63 EUR
100+ 0.32 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 30
SIUD406ED-T1-GE3Vishay SiliconixDescription: MOSFET N-CH 30V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
auf Bestellung 16860 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
SIUD406ED-T1-GE3VISHAYSIUD406ED-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIUD406ED-T1-GE3VishayTrans MOSFET N-CH 30V 0.37A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SIUD406ED-T1-GE3Vishay SiliconixDescription: MOSFET N-CH 30V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SIUD406ED-T1-GE3VishayTrans MOSFET N-CH 30V 0.37A 3-Pin PowerPAK T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
256+0.61 EUR
381+ 0.4 EUR
388+ 0.37 EUR
397+ 0.35 EUR
750+ 0.18 EUR
756+ 0.17 EUR
815+ 0.15 EUR
1125+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 256
SIUD406ED-T1-GE3Vishay SemiconductorsMOSFET 30V Vds; 8V Vgs PowerPAK 0806
auf Bestellung 12682 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
71+ 0.74 EUR
158+ 0.33 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
SiUD412ED-T1-GE3VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 0.71nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 1.5A
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
SiUD412ED-T1-GE3Vishay / SiliconixMOSFET 12V Vds 5V Vgs PowerPAK 0806
auf Bestellung 5750 Stücke:
Lieferzeit 14-28 Tag (e)
45+1.17 EUR
61+ 0.87 EUR
107+ 0.49 EUR
500+ 0.32 EUR
1000+ 0.25 EUR
3000+ 0.22 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 45
SiUD412ED-T1-GE3Vishay SiliconixDescription: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 123931 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
31+ 0.84 EUR
100+ 0.42 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 22
SIUD412ED-T1-GE3VishayTrans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)
414+0.38 EUR
531+ 0.28 EUR
535+ 0.27 EUR
936+ 0.15 EUR
944+ 0.14 EUR
1103+ 0.12 EUR
Mindestbestellmenge: 414
SiUD412ED-T1-GE3Vishay SiliconixDescription: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 117000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.18 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
SiUD412ED-T1-GE3VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 0.71nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 1.5A
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SIUD412ED-T1-GE3VishayTrans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SIUD412ED-T1-GE3VishayTrans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SIUPC3Carlo GavazziInterface Modules RS485/USB CONVERTER REV.0
Produkt ist nicht verfügbar
SIUTCP2Carlo GavazziInterface Modules VIRTUAL COMM PORT GATEWAY
Produkt ist nicht verfügbar