SIUD402ED-T1-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.26 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.13 EUR |
| 24000+ | 0.12 EUR |
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Technische Details SIUD402ED-T1-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 1A; Idm: 1.4A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 1A, Pulsed drain current: 1.4A, Power dissipation: 1.25W, Case: PowerPAK® 0806-3, Gate-source voltage: ±8V, On-state resistance: 1.8Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Technology: TrenchFET®, Gate charge: 1.2nC.
Weitere Produktangebote SIUD402ED-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIUD402ED-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 20V 1A PPAK 0806 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIUD402ED-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 1A; Idm: 1.4A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 1.4A Power dissipation: 1.25W Case: PowerPAK® 0806-3 Gate-source voltage: ±8V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Gate charge: 1.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIUD402ED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1A PPAK 0806
Description: MOSFET N-CH 20V 1A PPAK 0806
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIUD402ED-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 1A; Idm: 1.4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 1.4A
Power dissipation: 1.25W
Case: PowerPAK® 0806-3
Gate-source voltage: ±8V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Gate charge: 1.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 1A; Idm: 1.4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 1.4A
Power dissipation: 1.25W
Case: PowerPAK® 0806-3
Gate-source voltage: ±8V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Gate charge: 1.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH